Nonlinear frequency conversion is ubiquitous in laser engineering and quantum information technology. A long-standing goal in photonics is to integrate on-chip semiconductor laser sources with nonlinear optical components. Engineering waveguide lasers with spectra that phase-match to nonlinear processes on the same device is a formidable challenge. Here, we demonstrate difference-frequency generation in an AlGaAs Bragg reflection waveguide which incorporates the gain medium for the pump laser in its core. We include quantum dot layers in the AlGaAs waveguide that generate electrically driven laser light at ~790 nm, and engineer the structure to facilitate nonlinear processes at this wavelength. We perform difference-frequency generation between 1540 nm and 1630 nm using the on-chip laser, which is enabled by the broad modal phase-matching of the AlGaAs waveguide, and measure normalized conversion efficiencies up to $(0.64\pm0.21)$ %/W/cm$^2$. Our work demonstrates a pathway towards devices that utilize on-chip active elements and strong optical nonlinearities to enable highly integrated photonic systems-on-chip.
We demonstrate experimentally the frequency time entanglement of photon pairs produced in a CW pumped quasi phased matched AlGaAs superlattice waveguide. A visibility of 96.0+-0.7% without background subtraction has been achieved, which corresponds the violation of Bell inequality by 52 standard deviations.
Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, AlGaAs has the potential to produce a high level of thermo-optic noise. We have fabricated a set of AlGaAs crystalline coatings, transferred to fused silica substrates, whose layer structure has been optim…
We demonstrate experimentally that spontaneous parametric down-conversion in an AlGaAs semiconductor Bragg reflection waveguide can make for paired photons highly entangled in the polarization degree of freedom at the telecommunication wavelength of 1550 nm. The pairs of photons show visibility higher than 90% in several polarization bases and violate a Clauser-Horne-Shimony-Holt Bell-like inequality by more than 3 standard deviations. This represents a significant step toward the realization of efficient and versatile self pumped sources of entangled photon pairs on-chip.
We report parametric gain by utilizing $ χ^{(2)} $ non-linearities in a semiconductor Bragg Reflection Waveguide (BRW) waveguide chip. Under the two-mode degenerate type II phase matching, it can be shown that more than 18 dBs of parametric gain for both TE and TM modes is tenable in 100s of micrometers of device length. Polarization insensitive parametric gain can be attained within the 1550 nm region of the spectrum. These AlGaAs BRW waveguides exhibit sub-photon per pulse sensitivity. This is in sharp contrast to other types of parametric gain devices which utilize $ χ^{(3)} $, where the pu…
A temporal variation of a spectrum of excited modes in a continuously pumped erbium-doped random fiber laser (RFL), based on randomly distributed Bragg gratings, is studied. Developed phenomenological theoretical model assumes hard excitation mechanism of the eigenmodes instability. The model explains qualitatively peculiarities of the spectrum variation, observed experimentally.
Bragg-reflection waveguides (BRWs) fabricated from AlGaAs provide an interesting non-linear optical platform for photon-pair generation via parametric down-conversion (PDC). In contrast to many conventional PDC sources, BRWs are made of high refractive index materials and their characteristics are very sensitive to the underlying layer structure. First, we show that the design parameters like the phasematching wavelength and the group refractive indices of the interacting modes can be reliably controlled even in the presence of fabrication tolerances. We then investigate, how these characteris…
We report the fabrication and performance of the first C-band directly-written monolithic waveguide-laser. The waveguide-laser device was created in an Erbium and Ytterbium doped phosphate glass host and consisted of an optical waveguide that included a distributed feedback Bragg grating structure. The femtosecond laser direct-write technique was used to create both the waveguide and the waveguide-Bragg grating simultaneously and in a single processing step. The waveguide-laser was optically pumped at approximately 980 nm and lased at 1537nm with a bandwidth of less than 4 pm.
Recently there is an increasing attention to electrically pumped room temperature sub-wavelength plasmon sources because of their various potential applications mainly in the integrated plasmonic field. In this paper, a GaAs/AlGaAs quantum dot based waveguide integrated plasmonic nanolaser is introduced and theoretically investigated. Using a semi-classical rate equation model, performance of our nanolaser is studied and its characteristics are presented in details. The proposed nanolaser has a tiny footprint of 0.25 um2, room temperature operating condition and CMOS friendly process while hav…
Compared to traditional nonlinear optical crystals, like BaB$_2$O$_4$, KTiOPO$_4$ or LiNbO$_3$, semiconductor integrated sources of photon pairs may operate at pump wavelengths much closer to the bandgap of the materials. This is also the case for Bragg-reflection waveguides (BRW) targeting parametric down-conversion (PDC) to the telecom C-band. The large nonlinear coefficient of the AlGaAs alloy and the strong confinement of the light enable extremely bright integrated photon pair sources. However, under certain circumstances, a significant amount of detrimental broadband photoluminescence ha…
We discuss the feasibility of a soft-x-ray distributed feedback laser (DFL) pumped by an x-ray free electron laser (X-FEL). The DFL under consideration is a Mg/SiC bi-layered Bragg reflector pumped by a single X-FEL bunch at 57.4 eV, stimulating the Mg L2,3 emission at 49 eV corresponding to the 3s-3d -> 2p1/2,3/2 transition. Based on a model developed by Yariv and Yeh and an extended coupled-wave theory, we show that it would be possible to obtain a threshold gain compatible with the pumping provided by available X-FEL facilities.
We present a hundred-watt-level linearly-polarized random fiber laser (RFL) pumped by incoherent broadband amplified spontaneous emission (ASE) source and prospect the power scaling potential theoretically. The RFL employs half-opened cavity structure which is composed by a section of 330 m polarization maintained (PM) passive fiber and two PM high reflectivity fiber Bragg gratings. The 2nd order Stokes light centered at 1178 nm reaches the pump limited maximal power of 100.7 W with a full width at half-maximum linewidth of 2.58 nm and polarization extinction ratio of 23.5 dB. The correspondin…
The emerging hybrid integrated quantum photonics combines advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing. Despite the tremendous progress in hybrid integrations of III-V quantum emitters with silicon-based photonic circuits and superconducting single-photon detectors, on-chip optical excitations of quantum emitters via miniaturized lasers towards single-photon sources (SPSs) with low power consumptions, small device footprints and excellent coherence properties is highly desirable yet illusive. In this work…
We report the elliptically, close to circularly polarized lasing at $\hbarω= 1.473$ and 1.522 eV from an AlAs/AlGaAs Bragg microcavity with 12 GaAs quantum wells in the active region and chiral-etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.
Solid state lasers are demanding independent control in the gain media and cavity loss to achieve ultra short laser pulses using passive mode-locking. Recently, laser mode-locking is achieved with a MBE structure with multiple quantum wells, designed to achieve two functions; Bragg mirror and changes in absorption to control the cavity dynamics. The use of an AlGaAs/AlAs Bragg mirror with a 15 nm GaAs saturable absorber used in a Cr:LiSAF tuneable laser proved to be effective to produce femtosecond pulses. The use of saturable absorbers thus far is a trial and error procedure that is changing …
Being motivated by the recent prediction of high-$Q$ supercavity modes in subwavelength dielectric resonators, we study the second-harmonic generation from isolated subwavelength AlGaAs nanoantennas pumped by a structured light. We reveal that nonlinear effects at the nanoscale can be enhanced dramatically provided the resonator parameters are tuned to the regime of the bound state in the continuum. We predict a record-high conversion efficiency for nanoscale resonators that exceeds by two orders of magnitude the conversion efficiency observed at the conditions of magnetic dipole Mie resonance…
We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It…
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of …
Thulium-doped fibers suitable for core-pumped single-frequency lasers were fabricated by the modified chemical vapor deposition (MCVD) method. Refractive index profile, doping profile and spectral absorption was measured. High doping concentration of thulium ions should be achieved to allow for high absorption of light at a pump wavelength while the thulium ions clustering should be avoided to prevent the cooperative upconversion and quenching processes. The fabricated fibers featured pump absorption up to 70dB/m at a pump wavelength of 1611nm. The single-frequency master oscillator with a res…
Semiconductor nanowires (NWs) are promising for realizing various on-chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light-matter interaction. However, high-intensity pulsed pump lasers are typically needed to exploit their optical nonlinearity because light couples poorly with nanometric-size wires. Here, we demonstrate microwatts continuous-wave light pumped second harmonic generation (SHG) in AlGaAs NWs by integrating them with silicon planar photonic crystal cavities. Light-NW coupling is enhanced effectively by the extremely localized cavity mode at t…
Arrays of quantum dot micropillar lasers are an attractive technology platform for various applications in the wider field of nanophotonics. Of particular interest is the potential efficiency enhancement as consequence of cavity quantum electrodynamics effects which makes them prime candidates for next generation photonic neurons in neural network hardware. However, in particular for optical pumping their power-conversion efficiency can be very low. Here we perform an in-depth experimental analysis of quantum dot microlasers and investigate their input-output relationship over a wide range of …
