1 T- TaS2薄膜器件中的热驱动电荷密度波跃迁：GHz开关速度的展望
Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed
摘要：
我们报告的1 T-TaS 2薄膜电荷密度波器件的室温开关，使用纳秒持续时间的电脉冲，以构建其时间分辨的电流-电压特性。开关动作是基于在这种材料中的近相称到不相称的电荷密度波相变，其在热平衡时具有350 K的特征温度。对于足够短的脉冲，在纳秒范围内的上升时间，自加热的设备被抑制，并且它们的电流-电压特性是弱非线性和自由的滞后。这随着脉冲持续时间增加到200 ns而改变，其中电流产生明显的滞后，其随着脉冲持续时间非单调地演变。通过将我们的实验结果与这些器件中瞬态热扩散的数值分析相结合，我们清楚地揭示了它们开关的热起源。尽管这种热特性，我们的建模表明，适当减少这些设备的大小应该允许他们在GHz频率的操作。
英文摘要：
We report on the room-temperature switching of 1T-TaS2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current-voltage characteristics. The switching action is based upon the nearly-commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equilibrium. For sufficiently short pulses, with rise times in the nanosecond range, self-heating of the devices is suppressed, and their current-voltage characteristics are weakly non-linear and free of hysteresis. This changes as the pulse duration is increased to 200 ns, where the current develops pronounced hysteresis that evolves non-monotonically with the pulse duration. By combining the results of our experiments with a numerical analysis of transient heat diffusion in these devices, we clearly reveal the thermal origins of their switching. In spite of this thermal character, our modeling suggests that suitable reduction of the size of these devices should allow their operation at GHz frequencies.
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