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arXiv 2101.01463cond-mat.str-elcond-mat.mtrl-sci
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稀土基半导体的相关电子结构和光学响应

Correlated electronic structure and optical response of rare-earth-based semiconductors

Anna Galler, James Boust, Alain Demourgues, Silke Biermann, Leonid V. Pourovskii

摘要:

在关联半导体中同时出现Mott和带隙导致了复杂的光学响应,其吸收边的性质在实验和理论上都难以解决。在这里,我们结合了动力学平均场论的方法来本地化的4f壳层的带隙的半本地交换关联势的改进的描述计算的光学性质的轻稀土氟硫化物LnSF(Ln=Pr,Nd,Sm,Gd)从第一性原理。与实验一致,我们发现SmSF的吸收边源于S-3 p到Sm-4f的跃迁,而Gd化合物表现为普通的p-d带隙半导体。在未探索的PrSF和NdSF系统中,我们预测在导带底部出现相当独特的强杂化4f-5d态。吸收边的性质是每个系统中光学电导率的特殊各向异性的基础。

英文摘要:

Simultaneous occurrence of the Mott and band gap in correlated semiconductors results in a complex optical response with the nature of the absorption edge difficult to resolve both experimentally and theoretically. Here, we combine a dynamical mean-field theory approach to localized 4f shells with an improved description of band gaps by a semi-local exchange-correlation potential to calculate the optical properties of the light rare-earth fluorosulfides LnSF (Ln=Pr, Nd, Sm, Gd) from first principles. In agreement with experiment, we find the absorption edge in SmSF to stem from S-3p to Sm-4f transitions, while the Gd compound behaves as an ordinary p-d gap semiconductor. In the unexplored PrSF and NdSF systems we predict a rather unique occurrence of strongly hybridized 4f-5d states at the bottom of the conduction band. The nature of the absorption edge underlies a peculiar anisotropy of the optical conductivity in each system.

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