In recent years, it has been shown that Berry curvature monopoles and dipoles play essential roles in the anomalous Hall effect and the nonlinear Hall effect respectively. In this work, we demonstrate that Berry curvature multipoles (the higher moments of Berry curvatures at the Fermi energy) can induce higher-order nonlinear anomalous Hall (NLAH) effect. Specifically, an AC Hall voltage perpendicular to the current direction emerges, where the frequency is an integer multiple of the frequency of the applied current. Importantly, by analyzing the symmetry properties of all the 3D and 2D magnetic point groups, we note that the quadrupole, hexapole and even higher Berry curvature moments can cause the leading-order frequency multiplication in certain materials. To provide concrete examples, we point out that the third-order NLAH voltage can be the leading-order Hall response in certain antiferromagnets due to Berry curvature quadrupoles, and the fourth-order NLAH voltage can be the leading response in the surface states of topological insulators induced by Berry curvature hexapoles. Our results are established by symmetry analysis, effective Hamiltonian and first-principles calculations. Other materials which support the higher-order NLAH effect are further proposed, including 2D antiferromagnets and ferromagnets, Weyl semimetals and twisted bilayer graphene near the quantum anomalous Hall phase.
Various nonlinear characteristics of solid states, such as the circular photogalvanic effect of time-reversal symmetric insulators, the quantized photogalvanic effect of Weyl semimetals, and the nonlinear Hall effect of time-reversal symmetric metals, have been associated with the Berry curvature dipole (BCD). Here, we explore the question of whether the Berry curvature dipole and multipoles of time-reversal symmetric insulators can be traced in the nonlinear optical responses. We performed real-time time-dependent density functional theory calculations and examined the second harmonic generat…
The intrinsic spin Hall conductivity and the anomalous Hall conductivity of ferromagnetic L1$_0$-CoPt are studied using first principle calculations of the spin Berry and Berry curvatures, respectively. We find that the Berry curvature and the spin Berry curvature exhibit different symmetry with respect to that of the band structure. The Berry curvature preserves the $C_{4v}$ crystal rotation symmetry along the c-axis whereas the symmetry of the spin Berry curvature reduces to $C_{2v}$. Contributions to the Berry curvature and the spin Berry curvature are classified by the spin character of ba…
Berry phase and Berry curvature play a key role in the development of topology in physics and do contribute to the transport properties in solid state systems. In this paper, we report the finding of novel nonzero Hall effect in topological material ZrTe5 flakes when in-plane magnetic field is parallel and perpendicular to the current. Surprisingly, both symmetric and antisymmetric components with respect to magnetic field are detected in the in-plane Hall resistivity. Further theoretical analysis suggests that the magnetotransport properties originate from the anomalous velocity induced by Be…
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K' valleys, having Berry curvatures with opposite signs, and thus vanishing anomalous Hall effect in this system. Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe2 through applying uniaxial strain to break C3v symmetry. As a result, although the Berry curvature itself is still …
The spin Hall effect is investigated in a high mobility two dimensional electron system with the spin-orbital coupling of both the Rashba and the Dresselhaus types. A spin current perpendicular to the electric field is generated by either the Rashba or the Dresselhaus coupling. The spin Hall conductance is independent of the stength of the coupling, but its sign is determined by the relative ratio of the two couplings. The direction of spin current is controllable by tuning the magnitude of the surface electric field perpendicular to the two dimensional plane via adjusting the Rashba coupling.…
One big achievement in modern condensed matter physics is the recognition of the importance of various band geometric quantities in physical effects. As prominent examples, Berry curvature and the Berry curvature dipole are connected to the linear and the second-order Hall effects, respectively. Here, we show that the Berry connection polarizability (BCP) tensor, as another intrinsic band geometric quantity, plays a key role in the third-order Hall effect. Based on the extended semiclassical formalism, we develop a theory for the third-order charge transport and derive explicit formulas for th…
A mechanism for phonon Hall effect (PHE) in non-magnetic insulators under an external magnetic field is theoretically studied. PHE is known in (para)magnetic compounds, where the magnetic moments and spin-orbit interaction play an essential role. In sharp contrast, we here show that a non-zero Berry curvature of acoustic phonons is induced by an external magnetic field due to the correction to the adiabatic Born-Oppenheimer approximation. This results in the finite thermal Hall conductivity $κ_H$ in nonmagnetic band insulators. Our estimate of $κ_H$ for a simple model gives $κ_H \sim 1.0\times…
To justify the origin of anomalous Hall effect (AHE), it is highly desirable to have the system parameters tuned continuously. By quantitative calculations, we show that the doping dependent sign reversal in CuCr$_{2}$Se$_{4-x}$Br$_{x}$, observed but not understood, is nothing but direct evidence for the Berry-Phase mechanism of AHE. The systematic calculations well explain the experiment data for the whole doping range where the impurity scattering rates is changed by several orders with Br substitution. Further sign change is also predicted, which may be tested by future experiments.
Ever since the novel quantum Hall effect in bilayer graphene was discovered, and explained by a Berry phase of 2pi [K. S. Novoselov et al., "Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene", Nature Phys. 2, 177 (2006)], it has been widely accepted that the low-energy electronic wavefunction in this system is described by a non-trivial Berry phase of 2pi, different from the zero phase of a conventional two-dimensional electron gas. Here, we show that (i) the relevant Berry phase for bilayer graphene is not different from that for a conventional two-dimensional el…
Berry curvature (BC) governs topological phases of matter and generates anomalous transport. When a magnetic field is applied, phonons can acquire BC indirectly through spin-lattice coupling, leading to a linear phonon Hall effect. Here, we show that polar lattice distortion directly couples to a phonon BC dipole, which causes a switchable non-linear phonon Hall effect. In a SnS monolayer, the in-plane ferroelectricity induces a phonon BC and leads to the phononic version of the non-volatile BC memory effect. As a new type of ferroelectricity-phonon coupling, the phonon Rashba effect emerges a…
The Berry phase of π in graphene is derived in a pedagogical way. The ambiguity of how to calculate this value properly is clarified. Its connection with the unconventional quantum Hall effect in graphene is discussed.
We have shown that the study of topological aspects of the underlying geometry in a ferromagnetic spin system gives rise to an intrinsic Berry phase. This real space Berry phase arises due to the spin rotations of conducting electrons which can be manifested as a further contribution in anomalous Hall effect.
Transverse current due to Berry curvature in phase space is formulated based on the Boltzmann equations with the semiclassical equations of motion for an electron wave packet. It is shown that the Hall effect due to the phase space Berry curvature is absent because the contributions from "anomalous velocity" and "effective Lorentz force" are completely cancelled out.
Anomalous Hall effect and spin Hall effect originate due to spin-orbit coupling that in the Kohn-Luttinger ${\bf k}\cdot{\bf p}$ formalism is represented by anomalous terms in the coordinate and velocity operators. Relation of these operators to the Berry curvature in the momentum space is presented for electrons in GaAs type semiconductors. For centrosymmetric semiconductors, transformational properties of Berry curvature are discussed.
The Berry phase origin is elaborated for the recent-discovered planar spin Hall effect which features current-induced spin polarization within the plane of the Hall deflection. We unravel a spin-repulsion vector governing the planar spin Hall effect, providing a transparent criteria for identifying intrinsic planar spin Hall materials. Finite spin-repulsion vector is found permitted in 13 crystalline point groups, revealing a big number of unexplored planar spin Hall systems. Our result can be used for the quantitative calculation of the planar spin Hall effect, facilitating further material h…
We consider Bloch electrons in the electromagnetic field and argue the relation between the Berry phase and the quantized Hall conductivity in three-dimension. The Berry phase we consider here is induced by the adiabatic change of the time-dependent vector potential. The relation has been shown in two-dimensional systems, and we generalize the relation in three-dimensional systems.
Inversion symmetry breaking and spin-orbit coupling lead to valley and spin Hall effect in MoS2. Because of the large valley separation in momentum space, the valley index is expected to be robust. In this paper, quantum Hall effect in MoS2 originated from Berry curvature is analyzed after review of symmetry structure and spin-orbit coupling Hamiltonian of MoS2. Finally an expression and rough calculation is given for valley and spin Hall effect.
We have studied here the newly observed families of fractional quantum Hall states in the framework of Berry phase. It has been shown that this approach embraces in a unified way the whole spectrum of quantum Hall states with their various characteristic features. The newly observed states can be well accommodated within the primary sequence of FQH states and need not be considered as second generation FQH states as suggested by some authors.
The $α$-$T_3$ model is characterized by a variable Berry phase that changes continuously from $π$ to $0$. We take advantage of this property to highlight the effects of this underlying geometrical phase on a number of physical quantities. The Hall quantization of the two limiting cases is dramatically different - a relativistic series is associated with a Berry phase of $π$ and a non-relativistic series is associated with the other limit. We study the quantization of the Hall plateaux as they continuously evolve from a relativistic to a non-relativistic regime. Additionally, we describe two ph…
Hall experiments in chiral magnets are often analyzed as the sum of an anomalous Hall effect, dominated by momentum-space Berry curvature, and a topological Hall effect, arising from the real-space Berry curvature in the presence of skyrmions, in addition to the ordinary Hall resistivity. This raises the questions of how one can incorporate, on an equal footing, the effects of the anomalous velocity and the real space winding of the magnetization, and when such a decomposition of the resistivity is justified. We provide definitive answers to these questions by including the effects of all phas…
The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but nonzero layer-locked hidden Berry curvature in real space. We show that compared to that of a trivial insulator, the layer Hall effect…
Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T'/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures, Berry-curvature dipoles created by spin degrees of freedom lead to strong nonlinear Hall effects. Under an easily accessible uniaxial strain of order 0.2%, strong nonlinear Hall signals, characterized by a Berry-curvature dipole on the order of 1Å, arise in electron-doped polar TMDs such as MoSSe, and this is easily detectable experimentally. Moreover, the magn…
Hot spot of Berry curvature is usually found at Bloch band anti-crossings, where the Hall effect due to the Berry phase can be most pronounced. With small gaps there, the adiabatic limit for the existing formulations of Hall current can be exceeded in a moderate electric field. Here we present a theory of non-adiabatic Hall effect, capturing non-perturbatively the across gap electron-hole excitations by the electric field. We find a general connection between the field induced electron-hole coherence and intrinsic Hall velocity. In coherent evolution, the electron-hole coherence can manifest a…
Materials can be classified by the topological character of their electronic structure and, in this perspective, global attributes immune to local deformations have been discussed in terms of Berry curvature and Chern numbers. Except for instructional simple models, linear response theories have been ubiquitously employed in calculations of topological properties of real materials. Here we propose a completely different and versatile approach to get the topological characteristics of materials by calculating physical observables from the real-time evolving Bloch states: the cell-averaged curre…
We present an approach to the computation of the non-Abelian statistics of quasiholes in quantum Hall states, such as the Pfaffian state, whose wavefunctions are related to the conformal blocks of minimal model conformal field theories. We use the Coulomb gas construction of these conformal field theories to formulate a plasma analogy for the quantum Hall states. A number of properties of the Pfaffian state follow immediately, including the Berry phases which demonstrate the quasiholes' fractional charge, the abelian statistics of the two-quasihole state, and equal-time ground state correlatio…
Due to the Berry curvature in momentum space, the magnon wavepacket undergoes two types of orbital motions in analogy with the electron system: the self-rotation motion and a motion along the boundary of the sample (edge current). The magnon edge current causes the thermal Hall effect, and these orbital motions give corrections to the thermal transport coefficients. We also apply our theory to the magnetostatic spin wave in a thin-film ferromagnet, and derive expression for the Berry curvature.
The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intra-layer and inter-layer couplings give important contributions to the Berry-curvature in the $K$ and $-K$ valleys of the Brillouin zone. The inter-layer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the inter-layer contribu…
The spin Hall effect is a phenomenon of inducing spin current by an external electric field. We recently proposed that this effect can occur in p-type semiconductors without relying upon any disorder scattering [S. Murakami et al., Science 301, 1348 (2003)]. This intrinsic effect is due to the ``Berry phase in momentum space'', representing topological structure of the Bloch band structure. We explain how the Berry phase brings about the spin Hall effect, and review several interesting aspects of this effect
Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting $Hg_{0.8}Cd_{0.2}Te$, and some other systems. Finally, we observe the transport data to follow $B\times dR_{xy}/dB \approx - ΔR_{xx}$. This feature is consistent wit…
The momentum dependent splitting of spin-bands in an electronic system is known as the "Rashba effect". Systems with the "Rashba effect" possess a Dirac point in momentum space. An electron in a cyclotron orbit enclosing that Dirac point in the reciprocal space gains a "Berry phase". We report here the Shubnikov-de-Haas oscillations (SdH) at the conducting interface of EuO-KTaO$_3$ (KTO). Observed SdH oscillations suggest the presence of two Fermi surfaces. For both the Fermi surfaces, we have seen the presence of a non-trivial "Berry phase" suggesting that the surfaces enclose the "Dirac poin…
We investigate the anomalous effects due to the Berry correction and the considerable perturbations in the silicene-like hexagonal lattice system. The Berry curvature in periodic Bloch band system which related to the electromagnetic field is explored, the induced transverse anomalous velocity gives rise to the intrinsic Hall conductivity (without the vertex correction) expecially in the quantum anomalous Hall phase. The quantum anomalous Hall effect which related to the anomalous velocity term is detected, including the band avoided corssing effect and the generated special band gap. %{Enlarg…
We propose the linear and nonlinear planar Hall effect (PHE) in tilted Weyl semimetals in the presence of an in-plane magnetic and electric field, where the field-induced Berry connection (FBC) plays a key role. We show that the PHE is ascribed to the quantum metric, distinct from the well-known chiral anomaly-induced PHE arising from the Berry curvature. Using a tilting vector to describe the model, we demonstrate the constrains on the linear and nonlinear PHE by the tilting directions. The linear PHE is intrinsic that is determined by the topological properties of energy bands, whereas the n…
It is well-known that a non-vanishing Hall conductivity requires time-reversal symmetry breaking. However, in this work, we demonstrate that a Hall-like transverse current can occur in second-order response to an external electric field in a wide class of time-reversal invariant and inversion breaking materials, at both zero and twice the optical frequency. This nonlinear Hall effect has a quantum origin arising from the dipole moment of the Berry curvature in momentum space, which generates a net anomalous velocity when the system is in a current-carrying state. We show that the nonlinear Hal…
There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and exhibit Berry's phase 2pi affecting their quantum dynamics. The L…
We show that the spin quantum Hall effect in the vortex state of two-dimensional rotating superfluid He3 can be described as an adiabatic spin transport of Bloch quasiparticles. We show that the spin Hall conductivity is written by the Berry phase as well as the Chern number. The results have similarity to the adiabatic pumping of Bloch electrons and the spontaneous polarization in crystalline dielectrics.
We have discussed here the polarization of quantum Hall states in the framework of the hierarchical analysis of IQHE and FQHE in terms of Berry phase. It is observed that we have fully polarized states for the filling factor $ν=1$ as well as $ν=\frac{1}{2m+1}$, $m$ being an integer. However, for $ν=p$ as well as $ν=\frac{p}{q}$, with $p>1$ and odd, $q$ odd we have partially polarized states and for $ν=\frac{p}{q}$, $p$ even, $q$ odd we have unpolarized states. It has been found that skyrmion excitations exist only for fully polarized states and for partially polarized and unpolarized states sk…
In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for determining and understanding topological properties. A prominent example is Hall anomalies observed in SrRuO3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect (THE) or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the AHE of SrRuO3 ultrathin films with controllable inhomogeneities in film thickness (tSRO). By harnessing the st…
A large Berry curvature in the vicinity of the Fermi energy is required in order to obtain a large anomalous Hall and Nernst effect. This Berry curvature can be induced by Weyl points and gapped nodal lines. One of the possible mechanisms takes place in systems with a symmetry group where mirror planes lead to protected nodal line structures. When these mirror symmetries are broken, e. g. via fixing a magnetization direction, a gap in the former nodal line can create Weyl points and a large Berry curvature along the gapped lines. In this work we study this effect in a minimal effective model a…
Recently, the magnetic topological insulator MnBi$_2$Te$_4$ emerged as a competitive platform to realize quantum anomalous Hall (QAH) states. We report a Berry-curvature splitting mechanism to realize the QAH effect in the disordered magnetic TI multilayers when switching from an antiferromagnetic order to a ferromagnetic order. We reveal that the splitting of spin-resolved Berry curvature, originating from the separation of the mobility edge during the magnetic switching, can give rise to a QAH insulator even \emph{without} closing the band gap. We present a global phase diagram, and also pro…
We point out a practical way to induce a finite charge Hall conductivity in graphene via an off-diagonal strain. Our conclusions are based on a general analysis and supported by numerical examples. The interplay between a substrate-induced gap and the strain is discussed. We show that the substrate-induced gap itself does not break the symmetry that maps one valley onto the other, and hence does not yield a net charge Hall effect. The net charge Hall conductivity is found to be sizable and should be observable in the presence of both the gap and the strain. The sign of the Hall conductivity ca…
Recently, the topological flat bands and spin Hall effect have been experimentally observed in the AB-stacked MoTe$_2$/WSe$_2$ heterostructures. In this work, we systematically study the Berry curvature effects in moiré transition metal dichalcogenide (TMD) heterobilayers. We point out that the moiré potential of the remote conduction bands would induce a sizable periodic pseudo-magnetic field (PMF) on the valence band. This periodic PMF creates net Berry curvature flux in each valley of the moiré Brillouin zone. The combination of the effect of the Berry curvature and the spin-valley locking …
The quantum oscillation is an important probe for the detection of a topological insulator(TI) surface states by means of electrical transport since the Shubnikov-de Haas oscillations allow to extract the Berry Phase which is the key test to detect the topological surface states. Here we have extracted the non trivial Berry Phase of 1$\%$ Sn doped strong TI $Sb_2Te_2Se$. We observed oscillation in Hall resistance as well and showed that this does not arise neither from the dominance of the SdH on Hall data nor this is the precursor of quantum Hall effect, rather this happens due to the pinning…
We theoretically investigate the localization mechanism of the quantum anomalous Hall effect (QAHE) in the presence of spin-flip disorders. We show that the QAHE keeps quantized at weak disorders, then enters a Berry-curvature mediated metallic phase at moderate disorders, and finally goes into the Anderson insulating phase at strong disorders. From the phase diagram, we find that at the charge neutrality point although the QAHE is most robust against disorders, the corresponding metallic phase is much easier to be localized into the Anderson insulating phase due to the \textit{interchange} of…
