具有充电热屏障的持久性磷光体中陷阱深度分布的揭示
Revealing trap depth distributions in persistent phosphors with a thermal barrier for charging
摘要：
在给定的充电和工作条件下，持久性磷光体的性能由负责这些独特性质的陷阱的性质决定。陷阱的特征在于其相关的热脱陷势垒的高度，并且在实际材料中经常发现陷阱深度的连续分布。因此，准确地确定陷阱深度分布的理解和持久性荧光粉的发展是非常重要的。然而，提取陷阱深度分布通常也受到用于充电的热障的存在的阻碍，这导致陷阱的温度依赖性填充。对于这种情况下，我们提出了一种方法提取陷阱深度分布从一组热释光（TL）曲线在不同的充电温度下获得。TL曲线首先通过Tikhonov正则化转化为电子布居函数，假设一级动力学。随后，作为其深度的函数，由所谓的填充函数量化的陷阱的占用，获得。最后，从填充函数重建下伏陷阱深度分布。与现有方法相比，该方法在捕获深度分布的精度和分辨率上都有很大的提高。因此，这是在理解持久性和存储磷光体的（脱）陷行为方面向前迈出的一步。
英文摘要：
The performance of persistent phosphors under given charging and working conditions is determined by the properties of the traps that are responsible for these unique properties. Traps are characterized by the height of their associated barrier for thermal detrapping, and a continuous distribution of trap depths is often found in real materials. Accurately determining trap depth distributions is hence of importance for the understanding and development of persistent phosphors. However, extracting the trap depth distribution is often hindered by the presence of a thermal barrier for charging as well, which causes a temperature-dependent filling of traps. For this case, we propose a method for extracting the trap depth distribution from a set of thermoluminescence (TL) curves obtained at different charging temperatures. The TL curves are first transformed into electron population functions via the Tikhonov regularization, assuming first-order kinetics. Subsequently, the occupation of the traps as a function of their depth, quantified by the so-called filling function, is obtained. Finally, the underlying trap depth distribution is reconstructed from the filling functions. The proposed method provides a substantial improvement in precision and resolution for the trap depth distribution compared with existing methods. This is hence a step forward in understanding the (de)trapping behavior of persistent and storage phosphors.
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