arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2012.07201cond-mat.mtrl-sci
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利用n型金刚石增强浅NV心

Shallow NV centers augmented by exploiting n-type diamond

A. Watanabe, T. Nishikawa, H. Kato, M. Fujie, M. Fujiwara, T. Makino, S. Yamasaki, E. D. Herbschleb, N. Mizuochi

摘要:

在金刚石纳米表面区域产生氮空位(NV)中心,同时保持其优异的自旋和光学性质,对于量子技术的应用至关重要。在这里,我们证明了自旋相干时间($\it{T}$ ${_2}$)的延长,电荷状态的稳定,以及通过离子注入技术在$\sim$ 15 nm的深度处在磷掺杂的n型金刚石中形成的NV中心的创建产率的提高。最长的$\it{T}$ ${_2}$约580 $μ$ s的浅NV中心的接近在体金刚石中的一个由天然丰富的$^{13}$ C的核自旋限制。n型金刚石中的平均$\it{T}$ ${_2}$比纯金刚石中的平均长1.7倍以上。此外,电荷状态的稳定和超过两倍的提高的创建产率被证实。在n型金刚石半导体中,浅NV中心的增强对于未来的集成量子器件具有重要意义。

英文摘要:

Creation of nitrogen-vacancy (NV) centers at the nanoscale surface region in diamond, while retaining their excellent spin and optical properties, is essential for applications in quantum technology. Here, we demonstrate the extension of the spin-coherence time ($\it{T}$${_2}$), the stabilization of the charge state, and an improvement of the creation yield of NV centers formed by the ion-implantation technique at a depth of $\sim$15 nm in phosphorus-doped n-type diamond. The longest $\it{T}$${_2}$ of about 580 $μ$s of a shallow NV center approaches the one in bulk diamond limited by the nuclear spins of natural abundant $^{13}$C. The averaged $\it{T}$${_2}$ in n-type diamond is over 1.7 times longer than that in pure non-doped diamond. Moreover, the stabilization of the charge state and the more than twofold improvement of the creation yield are confirmed. The enhancements for the shallow NV centers in an n-type diamond-semiconductor are significant for future integrated quantum devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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