发表机构
The University of Tokyo; National Institute of Advanced Industrial Science and Technology; National Institute for Materials Science（东京大学; 国立产业技术综合研究所; 国立材料研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文通过高角度离子注入（>60°）提高浅层NV$^-$中心的制备效率，实现近10%产率和低于10nm深度，且相干性质优异，可用于检测范德瓦尔斯材料中的核自旋。
AI 中文摘要
位于金刚石表面下几纳米处的带负电氮-空位（NV$^-$）中心是用于外部自旋纳米级传感的关键量子缺陷。然而，以高产率制备浅层NV$^-$中心仍然是一个材料学挑战。在此，我们证明高角度离子注入能够提高浅层NV$^-$中心的制备效率。通过以超过60°的角度注入$^{15}$N离子，我们实现了接近10%的高NV$^-$产率，且有效NV$^-$深度低于10 nm。这些产率显著高于通常报道的浅层NV$^-$制备产率。增强的NV$^-$产率与近表面区域空位与氮原子比例的增加一致，这预计会在退火过程中促进NV的形成。所制备的NV$^-$ ensembles展现出的相干性质与相似深度下的单个浅层NV$^-$中心相当，并能够检测附着在金刚石表面的范德瓦尔斯材料中的核自旋。我们的结果确立了离子注入的几何控制作为一种简单且广泛适用的方法来工程化浅层空位相关量子缺陷。
英文摘要
Negatively charged nitrogen-vacancy (NV$^-$) centers located a few nanometers below the diamond surface are key quantum defects for nanoscale sensing of external spins. However, the creation of shallow NV$^-$ centers with high yield remains a materials challenge. Here, we demonstrate that high-angle ion implantation enhances the creation efficiency of shallow NV$^-$ centers. By implanting $^{15}$N ions at angles exceeding 60$^\circ$, we achieve high NV$^-$ yields approaching 10% with effective NV$^-$ depths below 10 nm. These yields are significantly higher than those typically reported for shallow NV$^-$ creation. The enhanced NV$^-$ yield is consistent with an increased vacancy-to-nitrogen ratio in the near-surface region, which is expected to promote NV formation during annealing. The created NV$^-$ ensembles show coherence properties comparable to those of single shallow NV$^-$ centers at similar depths, and allow detection of nuclear spins in van der Waals materials attached to the diamond surface. Our results establish geometric control of ion implantation as a simple and broadly applicable approach to engineer shallow vacancy-related quantum defects.
Journal refPhys. Rev. Materials 10, 086202 (2026)
