Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural phases: three at room temperature (one amorphous and two crystalline, $α$ and $γ$) and one at high temperature (crystalline $β$). Because transitions between the amorphous and crystalline phases lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-$α$ transition in sub-10\,nm GeTe particles. The $α$-to-$β$ phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved X-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-$α$ transition between 210$^{\circ}$C and 240$^{\circ}$C and a volatile $α$-to-$β$ transition between 370$^{\circ}$C and 420$^{\circ}$C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications, such as in active photonics.
The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted to have bulk bands with giant Rashba-like splitting, originated by the inversion symmetry breaking due to ferroelectric polarization. In this work, we show that GeTe(111) surfaces with inwards or out…
The nanometer-scale size-dependent electronic transport properties of crystalline (c-) and amorphous (a-) germanium telluride (GeTe) ultrathin films sandwiched by titanium nitride (TiN) electrodes are investigated using ab initio molecular dynamics (AIMD), density functional theory (DFT), and Green's function calculations. We find that a-GeTe ultrathin films scaled down to about 38 Angstrom (12 atomic layers) still shows a band gap and the electrical conductance is mainly due to electron transport via intra-gap states. If the ultrathin films are further scaled, the a-GeTe band gap disappears d…
Engineering the structure of core-shell colloidal semiconductor nanoparticles (CSNPs) is attractive due to the potential to enhance photo-induced charge transfer (PICT) and induce favourable optical and electronic properties. Nonetheless, the sensitivity of telluride CSNPs to high temperatures makes it challenging to precisely modulate their surface crystallinity. Herein, we have developed an efficient strategy for synthesising telluride CSNPs with thin amorphous shells using aqueous cation exchange (ACE). By changing the synthesis temperature in the range 40 to 110C, the crystallinity of the …
In order to control and tailor the properties of nanodots, it is essential to separate the effects of quantum confinement from those due to the surface, and to gain insight into the influence of preparation conditions on the dot physical properties. We address these issues for the case of small Ge clusters (1-3 nm), using a combination of empirical and first-principles molecular dynamics techniques. Our results show that over a wide temperature range the diamond structure is more stable than tetragonal, ST12-like structures for clusters containing more than 50 atoms; however, the magnitude of …
Metasurfaces allow for the spatiotemporal variation of amplitude, phase, and polarization of optical wavefronts. Implementation of active tunability of metasurfaces promises compact flat optics capable of reconfigurable wavefront shaping. Phase-change materials (PCMs), such as germanium telluride or germanium antimony telluride, are a prominent material class enabling reconfigurable metasurfaces due to their large refractive index change upon structural transition. However, commonly employed laser-induced switching of PCMs limits the achievable feature sizes and thus, restricts device miniatur…
A 125Te NMR study of bismuth telluride nanoparticles as function of particle size revealed that the spin-lattice relaxation is enhanced below 33 nm, accompanied by a transition of NMR spectra from single to bimodal regime. The satellite peak features a negative Knight shift and higher relaxivity, consistent with core polarization from p-band carriers. Whereas nanocrystals follow a Korringa law in the range 140-420K, micrometer particles do so only below 200K. The results reveal increased metallicity of these nanoscale topological insulators in the limit of higher surface-to-volume ratios.
The Cobalt-germanium (Co-Ge) is a fascinating complex alloy system that has unique structure and exhibit range of interesting magnetic properties which would change when reduce to nanoscale dimension. At this experimental work, the high-aspect-ratio Co5Ge3 nanoparticle with average size of 8nm was synthesized by gas aggregation-type cluster-deposition technology. The nanostructure morphology of the as-made binary Co5Ge3 nanoparticles demonstrate excellent single-crystalline hexagonal structure with mostly preferable growth along (110) and (102) directions. In contrast the bulk possess Pauli pa…
Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this work, the segregation of Ge in a Ge2Sb2Te5 film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. The Ge2Sb2Te5 film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant r…
Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly been in phase change memory and thermoelectric power generation. In this article, we study the electronic structure of the GeTe by first-principles calculations. The theoretical direct bandgap of GeTe was found to be 0.69 eV which is very close to the experimental value. Then, we demonstrate a single-junction GeTe thermophotovoltaic (TPV) cell based on device transport model with np structure. The device was optimized for the higher performance of the TPV cell. The GeTe TPV cell exhibited an efficiency of 7.9% with JSC=16.…
Phase-change materials (PCMs), which are well-established in optical and random-access memories, are increasingly studied for emerging topics such as brain-inspired computing and active photonics. These applications take advantage of the pronounced reflectivity and resistivity changes that accompany the structural transition in PCMs from their amorphous to crystalline state. However, PCMs are typically fabricated as thin films via sputtering, which is costly, requires advanced equipment, and limits the sample and device design. Here, we investigate a simpler and more flexi-ble approach for app…
Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn doping of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varyin…
We calculate the Curie temperature of layered ferromagnets, chromium tri-iodide (CrI3), chromium tri-bromide (CrBr3), chromium germanium tri-telluride (CrGeTe3), and the Neel temperature of a layered anti-ferromagnet iron di-chloride (FeCl2), using first-principles density functional theory calculations and Monte-Carlo simulations. We develop a computational method to model the magnetic interactions in layered magnetic materials and calculate their critical temperature. We provide a unified method to obtain the magnetic exchange parameters (J) for an effective Heisenberg Hamiltonian from first…
The optimization of secondary phase in thermoelectric(TE) materials can {helps in improvisation of material's efficiency}. Being a potential {contender} for lower temperature TE application, bismuth telluride(Bi$_2$Te$_3$) nanoparticles were synthesized via different routes and profiles to optimize their pure single phase. Systematic characterizations were performed with the help of X-ray diffraction (XRD), Rietveld refinement and field effect-scanning electron microscopy(FE-SEM) for structural and morphological behavior, while TE properties such as Seebeck coefficient, electrical conductivity…
