Anomalous Magnetoresistance by Breaking Ice Rule in Bi2Ir2O7/Dy2Ti2O7 Heterostructure
H. Zhang, C. K. Xing, K. Noordhoek, Z. Liu, T. H. Zhao, L. Horák, Q. Huang, L. Hao, J. Yang, S. Pandey, E. Dagotto, Z. Jiang, J. H. Chu, Y. Xin, E. S. Choi, H. D. Zhou, J. Liu
While geometrically frustrated quantum magnets are known for a variety of exotic spin states that are of great interests of understanding emergent phenomena as well as enabling revolutionary quantum technologies, most of them are necessarily good insulators which are difficult to be integrated with modern electrical circuit that relies on moving charge carriers. The grand challenge of converting fluctuations and excitations of frustrated moments into electronic responses is finding ways to introduce charge carriers that interact with the localized spins without destroying the spin states. Here, we show that, by designing a Bi2Ir2O7/Dy2Ti2O7 heterostructure, the breaking of the spin ice rule in insulating Dy2Ti2O7 can lead to a charge response in the Bi2Ir2O7 conducting layer that can be detected as anomalous magnetoresistance. These results demonstrate a novel and feasible interfacial approach for electronically probing exotic spin states in insulating magnets, laying out a blueprint for the metallization of frustrated quantum magnets.
Perovskite SrRuO$_3$ is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report synthesis and investigation of atomically flat artificial multilayers of SrRuO$_3$ with the spin-orbit semimetal SrIrO$_3$ in combination with band-structure calculations with a Hubbard $U$ term and topological analysis. They reveal an electronic reconstruction and emergence of flat Ru-4d$_{xz}$ bands near the interface, ferromagnetic interlayer coupling and negative Berry-curvature contribution to the anomalous Hall effect. We analyze the Hall ef…
We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) …
Transport measurements on the two dimensional electron system in Al2O3 SrTiO3 heterostructures indicate significant noncrystalline anisotropic behavior below T = 30 K. Lattice dislocations in SrTiO3 and interfacial steps are suggested to be the main sources for electronic anisotropy. Anisotropic defect scattering likewise alters magnetoresistance at low temperature remarkably and influences spin-orbit coupling significantly by the Elliot Yafet mechanism of spin relaxation resulting in anisotropic weak localization. Applying a magnetic field parallel to the interface results in an additional fi…
Two-dimensional (2D) magnetic materials offer unprecedented opportunities for fundamental physics and applied research in spintronics and magnonics. Beyond the pioneering studies on 2D CrI3 and Cr2Ge2Te6, this emerging field has expanded to 2D antiferromagnets exhibiting different spin anisotropies and textures. Of particular interest is the layered metamagnet CrSBr, a relatively air-stable semiconductor formed by antiferromagnetically-coupled ferromagnetic layers (Tc~150 K) that can be exfoliated down to the single-layer. It presents a complex magnetic behavior with a dynamic magnetic crossov…
The original proposal to achieve superconductivity by starting from a quantum spin-liquid (QSL) and doping it with charge carriers, as proposed by Anderson in 1987, has yet to be realized. Here we propose an alternative strategy: use a QSL as a substrate for heterostructure growth of metallic films to design exotic superconductors. By spatially separating the two key ingredients of superconductivity, i.e., charge carriers (metal) and pairing interaction (QSL), the proposed setup naturally lands on the parameter regime conducive to a controlled theoretical prediction. Moreover, the proposed set…
Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth techniques enable us to combine different complex oxides with atomic precision and form an oxide heterostructure. Recent theoretical and experimental work has shown that charge transfer across oxide interfaces generally occurs and leads to a great diversity of emergent interfacial properties which are not exhibited by bulk constituents. In this report, we rev…
Transition metal oxides are well known for their complex magnetic and electrical properties. When brought together in heterostructure geometries, they show particular promise for spintronics and colossal magnetoresistance applications. In this letter, we propose a new mechanism for the coupling between layers of itinerant ferromagnetic materials in heterostructures. The coupling is mediated by charge carriers that strive to maximally delocalize through the heterostructure to gain kinetic energy. In doing so, they force a ferromagnetic or antiferromagnetic coupling between the constituent layer…
Asymmetric magnetoresistance in 3$d$-5$d$ based La$_{0.67}$Ca$_{0.33}$MnO$_3$/SrIrO$_3$ bilayer: The role of unidirectional anisotropy
Jawaharlal Nehru University(贾瓦哈拉尔·尼赫鲁大学);Indian Institute of Technology, Hauz Khaz(印度理工学院豪兹卡兹校区);Special Centre for Nanoscience, Jawaharlal Nehru University(贾瓦哈拉尔·尼赫鲁大学纳米科学特别中心);UGC-DAE Consortium for Scientific Research, Indore(印度古物与考古学联合会-原子能部科学研究中心)
The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response to this issue, by granting the manipulation of the FM magnetization by the NM spin Hall effect (SHE) generated spin current. Additional functionalities, such as the electric field control of the spin current generation, can be offered using multifunctional ferromagnets. We have studied the spin current transfer processes between Pt and the multifunctional m…
We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer…
We present spin transport studies on a low-field, room-temperature magnetoelectric multiferroic polycrystalline $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}$ (SCFO)|Pt heterostructure wherein a highly tunable transverse conical magnetic phase is responsible for static and dynamic magnetoelectric coupling. We measured angular dependence of spin Hall magnetoresistance (SMR) at constant magnetic fields ($H$) in the range of 50 to 100 kOe. Application of field below the critical value (2.5 kOe), yielded negative SMR and the $H$-evolution of normalized SMR exhibited a negative gradient. F…