Xiaoyu Mao, Jun Fu, Ming Gong, Hualing Zeng
We demonstrate a 2D ferroelectric heterostructure with monolayer MoSe$_2$ and CuInP$_2$S$_6$ (CIPS). In the heterostructure, the electric polarization of CIPS results in c electronic modulation in monolayer MoSe$_2$.
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Ultrafast Polarization Switching via Laser-activated Ionic Migration in Ferroelectric CuInP$_2$S$_6$
本研究发现短激光脉冲可通过光掺杂效应改变势垒、触发集体离子迁移，在层状铁电材料CuInP$_2$S$_6$中实现数百飞秒的超快可逆极化翻转，为超快操控铁电态与探索新奇量子相提供了新途径。
Ferroelectric Schottky diodes of CuInP$_2$S$_6$ nanosheet
本文利用机械剥离的CuInP$_2$S$_6$纳米片制备金属-铁电半导体-金属异质结构，观察到四种偏压和极化依赖的电阻态，证实了铁电肖特基二极管及其开关行为。
Disentangling stress and curvature effects in layered 2D ferroelectric CuInP2S6
通过压电响应力显微镜与有限元Landau-Ginzburg-Devonshire模型，研究解耦了二维铁电CIPS中的曲率与应变效应，发现弯曲诱发亚铁电畴且挠电效应影响局部极化迟滞，为曲率工程纳米器件开辟新途径。
Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. As the thickness going thinner, the competition between the surface energy, depolarization field and interfacial chemical bonds may give rise to the modification of ferroelectricity and…
Cyclic Ferroelectric Switching and Quantized Charge Transport in CuInP$_2$S$_6$
本文通过第一性原理计算研究CuInP$_2$S$_6$中Cu离子跨范德瓦尔斯间隙和穿层的铁电翻转路径，发现顺序路径在能量上占优，并证明这些路径可组装成整体绝缘的循环，使面外极化按量子演化，从而揭示该材料体现了量子化绝热电荷泵的物理。
Sliding-mediated ferroelectric phase transition in CuInP2S6 under pressure
本文通过实验与理论结合，揭示了CuInP2S6在静水压力下由层间滑动介导从单斜相到三方相的铁电相变，其中Cu离子作为枢轴调节层间相互作用，为调控范德华层状晶体长程有序提供了新途径。
Interface-tuning of ferroelectricity and quadruple-well state in CuInP$_2$S$_6$ via ferroelectric oxide
本文提出利用铁电氧化物PbZr$_{0.2}$Ti$_{0.8}$O$_3$界面调控CuInP$_2$S$_6$，克服其低居里温度和畴控制难题，显著增强超薄极限下的铁电性、压电性和极性排列，为柔性纳米器件应用提供有效策略。
2D layered ferroelectric materials such as CuInP$_2$S6 (CIPS) are promising candidates for novel and high-performance photocatalysts, owning to their ultrathin layer thickness, strong interlayer coupling, and intrinsic spontaneous polarization, while how to control the photocatalytic activity in layered CIPS remains unexplored. In this work, we report for the first time the photocatalytic activity of ferroelectric CIPS for the chemical deposition of silver nanostructures (AgNSs). The results show that the shape and spatial distribution of AgNSs on CIPS are tunable by controlling layer thicknes…
Deciphering the lattice vibrational behaviors of CuInP2S6 by angle-resolved polarized Raman scattering
通过角分辨偏振拉曼散射研究CuInP2S6晶格振动行为，揭示其各向异性振动特性及铁电序演变机制。
In this article mixed CuInP$_2$(S$_x$Se$_{1-x}$)$_6$ crystals were investigated by broadband dielectric spectroscopy (20 Hz - 3 GHz). The complete phase diagram has been obtained from these results. The phase diagram of investigated crystals is strongly asymmetric - the decreasing of ferroelectric phase transition temperatures in CuInP$_2$(S$_x$Se$_{1-x}$)$_6$ is much more flat with small admixture of sulphur then with small admixture of selenium. In the middle part of the phase diagram (x=0.4-0.9) the dipolar glass phase has been observed. In boundary region between ferroelectric order and di…
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great interest and importance. Here, we report on the ECE of ferroelectric materials with van der Waals layered structure (CuInP2S6 or CIPS in this work in particular). Over 60% polarization charge change is ob…
Size-effects on shift-current in layered CuInP$_2$S$_6$
研究层状CuInP₂S₆中位移电流的尺寸效应，发现高导电性可能由其他机制贡献，且尺寸效应显著降低体极限下的导电响应。
Scale-free switching of polarization in the layered ferroelectric material CuInP$_2$S$_6$
通过第一性原理计算发现CuInP$_2$S$_6$中偶极子弱耦合导致非相干无序切换，切换势垒约203.6-258.0 meV，比HfO$_2$小五倍，揭示无标度极化机制，为神经形态应用提供可调亚稳性设计思路。
Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosphate monolayers, i.e., analogs of CuInP$_2$S$_6$ and referred to as ABP$_2$X$_6$, lose ferroelectricity and instead exhibit an antiferroelectric (AFE) or paraelectric ordering. We propose to tune the AFE ABP$_2$X$_6$ monolayers into the FE ordering through interface engineering. The mechanism is that there are couplings between the charge polarizations of the ABP$_2$X$_6$ monolayers and the local dipoles as well as th…
The strain-induced transitions of the piezoelectric, pyroelectric and electrocaloric properties of the CuInP$_2$S$_6$ films
本文研究了半导体电极覆盖的亚铁电CuInP$_2$S$_6$应变薄膜的极化、压电、电卡和热释电性质，发现失配应变对这些性质具有与其他铁电薄膜相反的“反常”影响。
The ground state of CuInP$_2$S$_6$ thin films: A study of the deep potential method
研究CuInP₂S₆薄片的基态，结合第一性原理计算与深势能方法，发现多层薄片中铁电态（FiE）比反铁电态（AFE）更稳定，振动熵效应解释了实验与DFT预测的矛盾。
Anomalous Polarization Reversal in Strained Thin Films of CuInP$_2$S$_6$
本文利用LGD方法研究应变下CIPS薄膜的极化反转，发现其因多势阱特性表现出与经典铁电体相反的反常应变效应，并用电致伸缩系数的反转符号解释了该机制。
Polarization multistates in antiferroelectric van der Waals materials
本研究通过第一性原理计算，发现CuInP$_2$S$_6$家族双层和三层的反铁电范德华材料具有五重和七重极化多态，且可在电场下层选择性翻转，为超越双稳态的下一代铁电器件设计开辟了新途径。
Ferroelectrics that are also ionic conductors offer possibilities for novel applications with high tunability, especially if the same atomic species causes both phenomena. In particular, at temperatures just below the Curie temperature, polarized states may be sustainable as the mobile species is driven in a controlled way over the energy barrier that governs ionic conduction, resulting in unique control of the polarization. This possibility was recently demonstrated in CuInP2S6, a layered ferroelectric ionic conductor in which Cu ions cause both ferroelectricity and ionic conduction. Here, we…
Using Landau-Ginsburg-Devonshire approach and available experimental results we reconstruct the thermodynamic potential of the layered ferroelectric CuInP$_2$S$_6$ (CIPS), which is expected to be applicable a wide range of temperatures and applied pressures. The analysis of temperature dependences of the dielectric permittivity and lattice constants for different applied pressures unexpectedly reveals the critically important role of the nonlinear electrostriction in this material. With the nonlinear electrostriction included we calculated temperature and pressure phase diagrams and spontaneou…
Layered multi-ferroic materials exhibit a variety of functional properties that can be tuned by varying the temperature and pressure. As-synthesized CuInP$_2$S$_6$ is a layered material that displays ferrielectric behavior at room temperature. When synthesized with Cu deficiencies, CuInP$_2$S$_6$ spontaneously phase segregates to form ferrielectric CuInP$_2$S$_6$ (CIPS) and paraelectric In$_{4/3}$P$_2$S$_6$ (IPS) domains in a two-dimensional self-assembled heterostructure. Here, we study the effect of hydrostatic pressure on the structure of Cu-deficient CuInP$_2$S$_6$ by Raman spectroscopy me…
The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneous polarization. Therefore, Cu migration across the lattice results in unusual ferroelectric behavior. Here, we demonstrate how the interplay of polar and ionic properties provides a path to ionically…
Anomalous refractive index modulation and giant birefringence in 2D ferrielectric CuInP$_2$S$_6$
本工作报道了室温下二维铁电CuInP$_2$S$_6$中高达23.2%的反常厚度依赖性折射率变化及蓝紫光波段1.24的巨双折射，并将其归因于Cu(I)极化贡献，为电控光响应器件开辟了新途径。
Reconfigurable, non-volatile control of optical anisotropy in ReS2 via ferroelectric gating
本文通过AlScN铁电门控实现了二维ReS2中光学各向异性的非易失性控制，创下约95%的室温线偏振二向色性可调性纪录，并保持超过12000秒，为电压可编程光子器件提供了通用平台。
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Ωmm and a low contact resistivity of 1.1{\times}10-7 Ωcm2. The ITO transistor with a recessed channel and …
Doping ferroelectrics with carriers is often detrimental to polarization. This makes the design and discovery of metals that undergo a ferroelectric-like transition challenging. In this letter, we show from first principles that the oxygen octahedral rotations in perovskites are often enhanced by electron doping, and this can be used as a means to strengthen the structural polarization in certain hybrid-improper ferroelectrics -- compounds in which the polarization is not stabilized by the long range Coulomb interactions but is instead induced by a trilinear coupling to octahedral rotations. W…
Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferr…
Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures
本研究基于10 nm厚CuInP₂S₆与石墨烯的垂直异质结构建铁电二极管，实现约10⁶的高电阻比等优异性能，可稳定多比特存储，有望用于存算一体与神经形态计算。
Unexpected large electrostatic gating by pyroelectric charge accumulation
本研究利用 hBN 范德华界面和铁电 LiNbO3 基底的热释电特性，在石墨烯器件中实现了显著且长期的无电压静电门控效应，揭示了热释电电荷积累导致意外高掺杂的新机制。
Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide
该研究构建二维Bi₂O₂Se/PMN-PT铁电场效应晶体管，利用可切换铁电极化实现自旋轨道相互作用的可逆非易失性调控，为自旋电子学器件的非易失电调控提供新方案。
Light Polarization Sensitive Transistor Action in the van der Waals ferroelectric 4H-SnS2
本研究证实4H-SnS2存在室温铁电性，基于其构建的三端晶体管展现偏振调控特性，确立该材料为偏振驱动电子与光电子技术的潜在体系。
A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin films has been observed on graphene field-effect transistors on Pb0.92La0.08Zr0.52Ti0.48O3 gates GFET/PLZT-Gate during a vacuum annealing process developed to systematically remove the polar molecules adsorbed on the GFET channel surface. This allows detangle of the extrinsic and intrinsic hysteresis on GFET/PLZT-gate devices and detection of the dynamic sw…
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