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arXiv 2009.06353cond-mat.mtrl-scicond-mat.supr-con
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准一维超导体TaSe3中应变诱导拓扑相变的可视化

Visualization of the strain-induced topological phase transition in a quasi-one-dimensional superconductor TaSe3

Chun Lin, Masayuki Ochi, Ryo Noguchi, Kenta Kuroda, Masahito Sakoda, Atsushi Nomura, Masakatsu Tsubota, Peng Zhang, Cedric Bareille, Kifu Kurokawa, Yosuke Arai,… 展开作者

Chun Lin, Masayuki Ochi, Ryo Noguchi, Kenta Kuroda, Masahito Sakoda, Atsushi Nomura, Masakatsu Tsubota, Peng Zhang, Cedric Bareille, Kifu Kurokawa, Yosuke Arai, Kaishu Kawaguchi, Hiroaki Tanaka, Koichiro Yaji, Ayumi Harasawa, Makoto Hashimoto, Donghui Lu, Shik Shin, Ryotaro Arita, Satoshi Tanda, Takeshi Kondo

摘要:

从拓扑绝缘体到正常绝缘体的相变的控制可以允许自旋电流的开/关切换。虽然拓扑相变已经通过在半导体合金中的元素替代来实现,但是这样的方法需要制备具有各种组成的材料,因此它离要求可逆操作的可行的器件应用相当远。在这里,我们使用角分辨光电子能谱(ARPES)和自旋分辨ARPES可视化应变驱动的能带结构的准一维超导体TaSe 3的演变。我们证明,它经历了可逆的应变诱导拓扑相变,从一个强拓扑绝缘体阶段与自旋极化,准一维拓扑表面状态,拓扑平凡的半金属和带绝缘相。准一维超导体TaSe 3为拓扑自旋电子学的工程设计提供了一个合适的平台,例如作为自旋电流的开/关开关,对杂质散射具有鲁棒性。

英文摘要:

Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires the preparation of materials with various compositions, thus it is quite far from a feasible device application, which demands a reversible operation. Here we use angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES to visualize the strain-driven band structure evolution of the quasi-1D superconductor TaSe3. We demonstrate that it undergoes reversible strain-induced topological phase transitions from a strong topological insulator phase with spin-polarized, quasi-1D topological surface states, to topologically trivial semimetal and band insulating phases. The quasi-1D superconductor TaSe3 provides a suitable platform for engineering the topological spintronics, for example as an on/off switch for spin current robust against impurity scattering.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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