外延薄膜Na3Bi作为拓扑电子材料的研究进展
Progress in epitaxial thin-film Na3Bi as a topological electronic material
AI总结：
本文综述了拓扑狄拉克半金属Na3Bi外延薄膜的研究进展，重点涵盖分子束外延生长、电子性质表征、输运现象及二维限域诱导的拓扑相变，并展望了其在拓扑电子器件中的应用前景与挑战。
摘要：
Na3Bi是首个经实验验证的拓扑狄拉克半金属（TDS），也是承载相对论性狄拉克费米子的石墨烯三维类似物。其非常规的动量-能量关系从基础研究角度极具吸引力，并产生了手性载流子、手性反常和弱反局域化等令人兴奋的物理性质。同时，Na3Bi在实现拓扑晶体管等拓扑电子器件方面也展现出应用前景。本综述概述了过去几年在Na3Bi上取得的重大进展，重点关注通过分子束外延合成的、具有技术相关性的大面积薄膜。首先介绍了支撑Na3Bi独特电子性质的关键理论方面；随后回顾了在不同衬底上的生长过程；阐述了光谱学和显微学特征，并分析了不同掺杂区域下的半经典和量子输运现象。最后讨论了二维限域所产生的新兴性质，包括厚度依赖和电场驱动的拓扑相变，并对当前挑战和预期的未来进展进行了展望。
英文摘要：
Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising topological electronic devices such as topological transistors. In this review, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large-area thin films synthesised via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semi-classical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field driven topological phase transitions, are addressed, with an outlook towards current challenges and expected future progress.
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