具有低插入损耗的偏振无关可重构频率选择性吸收器/吸收器
Polarization-independent reconfigurable frequency selective rasorber/absorber with low insertion loss
摘要：
提出了一种基于二极管的偏振无关可重构低插损频率选择性吸收器。所提出的结构包括一个基于方形环路的损耗层和一个带通频率选择表面。这两层被空气层隔开。每一层都有一个嵌入式偏置网络，通过金属过孔向二极管提供偏置电压。这种配置可以避免与附加偏置线相关联的不期望的效果。当二极管处于关断状态时，该结构处于FSR模式，并且在4.28GHz处具有传输窗口，在吸收带内插入损耗（IL）仅为0.69dB。当二极管处于导通状态并且结构切换到吸收模式时，它实现了完美的吸收，在2.8到5.2 GHz的范围内吸收率超过90%。建立了该结构的等效电路模型，分析了其物理机理。所提出的架构的原型制造和测量，在合理的协议之间的模拟和测量观察，验证这种设计的有效性。
英文摘要：
A polarization-independent reconfigurable frequency selective rasorber (FSR)/absorber with low insertion loss based on diodes is proposed in this paper. The presented structure consists of a lossy layer based on square loops and a bandpass frequency-selective surface. These two layers are separated by an air layer. Each layer has an embedded bias network that provides the bias voltage to the diodes through metallic via. This configuration can avoid undesirable effects associated with the additional biasing wire. When the diodes are in off-state, the structure is in FSR mode and exhibits a transmission window at 4.28GHz with only 0.69dB insertion loss (IL) within the absorption bands. While diodes are in on-state and the structure switches to absorber mode, it achieves perfect absorption with absorptivity of over 90% ranging from 2.8 to 5.2 GHz. An equivalent circuit model (ECM) is developed to analyse the physical mechanism of the structure. A prototype of the proposed architecture is fabricated and measured, where reasonable agreements between simulations and measurements are observed, verifying the effectiveness of this design.
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