We show that the dipole moment of an exciton is uniquely determined by the quantum geometry of its eigenstates, and demonstrate its intimate connection with a quantity we call the Quantum Geometric Dipole (QGD). The QGD arises naturally in semiclassical dynamics of an exciton in an electric field, contributing to the anomalous velocity differently from the Berry's curvature. In a uniform electric field QGD results in a drift velocity akin to that expected for excitons in crossed electric and magnetic fields, even in the absence of a real magnetic field. We compute the quantities relevant to semiclassical exciton dynamics for several interesting examples of bilayer systems with weak interlayer tunneling and Fermi energy in a gap, where the exciton may be sensibly described as a two-body problem. These quantities include the exciton dispersion, its QGD, and Berry's curvature. For two gapped-graphene layers in a vanishing magnetic field, we find the Quantum Geometric Dipole vanishes if the layers are identical, but may be non-zero when the layers differ. We further analyze examples in the presence of magnetic fields, allowing us to examine cases involving graphene, in which a gap is opened by Landau level splitting. Heterostructures involving TMDs are also considered. In each case the Quantum Geometric Dipole and Berry's curvatures play out differently. In some cases, the lowest energy exciton state is found to reside at finite momentum, with interesting possibilities for Bose condensation. We also find situations in which the QGD increases monotonically with exciton momentum, suggesting that the quantum geometry can be exploited to produce photocurrents from initially bound excitons with electric fields. We speculate on further possible effects of the semiclassical dynamics in geometries where the constituent layers are subject to the same or different electric fields.
Under optical excitation, coupled quantum wells are known to reveal fascinating features in the photoluminescence pattern originating from dipole orientated indirect excitons. The appearance of an external ring has been attributed to macroscopic charge separation in the quantum well plane. We present a classical model of non-linear diffusion to account for the observed fragmentation of the external ring into a periodic array of islands. The model incorporates the Coulomb interactions between electrons, holes and indirect excitons. At low temperatures, these interactions lead to pattern formati…
We have succeeded in trapping indirect excitons in coupled quantum wells in a harmonic potential minimum via inhomogeneous applied stress and electric field. These excitons exhibit a strong Stark shift (over 60 meV), long lifetime (100 ns), and high diffusivity (1000 cm$^2$/s). This approach is very promising for obtaining the high exciton density needed for Bose condensation of excitons in two dimensions.
Noncentrosymmetric nature of single-layer transition metal dichalcogenides manifest itself in the finite piezoelectricity and valley-Zeeman coupling. We microscopically model nonlinear exciton transport in nano-bubble of single-layers of transition metal dichalcogenide. Thanks to the giant piezoelectric effect, we obtain an enormous internal electric field, $E_{\rm piezo}\sim 10^7$V/m, resulting in a built-in dipole moment of excitons. We demonstrate that the piezo-induced dipole-dipole interaction provides a novel channel for the nonlinear exciton transport distinct from the conventional isot…
A novel method to experimentally study the dynamics of long-living excitons in coupled quantum well semiconductor heterostructures is presented. Lithographically defined top gate electrodes imprint in-plane artificial potential landscapes for excitons via the quantum confined Stark effect. Excitons are shuttled laterally in a time-dependent potential landscape defined by an interdigitated gate structure. Long-range drift exceeding a distance of 150 um at an exciton drift velocity > 1000 m/s is observed in a gradient potential formed by a resistive gate stripe.
Modeling the charge-generation process is highly important to understand device physics and optimize power conversion efficiency of bulk-heterojunction (BHJ) organic solar cells (OSCs). Free carriers are generated by both ultrafast exciton delocalization and slow exciton diffusion and dissociation at the heterojunction interface. In this work, we developed a systematic numerical simulation to describe the charge-generation process by a modified drift-diffusion model. The transport, recombination, and collection of free carriers are incorporated to fully capture the device response. The theoret…
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the radiative recombination rate increases exponentially. Under continuous, localized excitation, we measure a continuous red shift of the emission, as excitons propagate away from the excitation spot. This…
Signatures of the Quantum Geometric Dipole of Interlayer Excitons in Counterflow Conductivity
Indiana University（印第安纳大学）；Quantum Science and Engineering Center, Indiana University（印第安纳大学量子科学与工程中心）；Instituto de Ciencia de Materiales de Madrid (CSIC)（马德里材料科学研究所（西班牙国家研究委员会））
Exciton Valley Hall effect is the spatial separation of the valley-tagged excitons in the presence of a drag force. Usually, the effect is associated with the anomalous velocity acquired by the particles due to the Berry curvature of the Bloch bands. Here we show that the anomalous velocity plays no role in the exciton valley Hall effect, which is governed by the side-jump and skew scattering mechanisms. We develop microscopic theory of the exciton valley Hall effect in the presence of synthetic electric field and phonon drag and calculate all relevant contributions to the valley Hall current …
Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a long lifetime. Employing heterostructures of monolayer TMDs, we realize optical and electrical generation of long-lived neutral and charged interlayer excitons. We demonstrate the transport of neutral in…
The magnetic-field dependence of the energy spectrum, wave function, binding energy and oscillator strength of exciton states confined in a circular graphene quantum dot (CGQD) are obtained within the configuration interaction (CI) method. We predict that: (1) excitonic effects are very significant in the CGQD as a consequence of a combination of geometric confinement, magnetic confinement and reduced screening; (2) two types of excitons (intravalley and intervalley excitons) are present in the CGQD because of the valley degree of freedom in graphene; (3) the intravalley and intervalley excito…
The geometry of electronic bands in a solid can drastically alter single-particle charge and spin transport. We show here that collective optical excitations arising from Coulomb interactions also exhibit unique signatures of Berry curvature and quantum geometric tensor. A non-zero Berry curvature mixes and lifts the degeneracy of $l \neq 0$ states, leading to a time-reversal-symmetric analog of the orbital Zeeman effect. The quantum geometric tensor, on the other hand, leads to $l$-dependent shifts of exciton states that is analogous to the Lamb shift. Our results provide an explanation of th…
We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under applied bias voltages from -0.5 V to 0.5 V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing pumping power, arising from the fact that electrons have a smaller effective mass than holes and are more easily captured by the quantum dots. The integrated PL intensity of negatively charged excitons…
In this paper, we study the exciton absorption spectra in InGaAs prolate ellipsoidal quantum dots when a strong pump laser resonant with electron quantized levels is active. Our obtained results by renormalized wavefunction theory show that, under suitable conditions, the initial exciton absorption peak is split into two new peaks as the evidence of the existence of the three-level optical Stark effect of excitons. We have suggested an explanation of the origin of the effect as well as investigating the effect of pump field energy, size, and geometric shape of the quantum dots on effect charac…
Topological Physics relies on the specific structure of the eigenstates of Hamiltonians. Their geometry is encoded in the quantum geometric tensor containing both the celebrated Berry curvature, crucial for topological matter, and the quantum metric. The latter is at the heart of a growing number of physical phenomena such as superfluidity in flat bands, orbital magnetic susceptibility, exciton Lamb shift, and non-adiabatic corrections to the anomalous Hall effect. Here, we report the first direct measurement of both Berry curvature and quantum metric in a two-dimensional continuous medium. Th…
We report on the magnetic field dispersion of the exciton spin-splitting and diamagnetic shift in single InAs/GaAs quantum dots (QDs) and dot molecules (QDMs) up to $B$ = 28 T. Only for systems with strong geometric confinement, the dispersions can be well described by simple field dependencies, while for dots with weaker confinement considerable deviations are observed: most importantly, in the high field limit the spin-splitting shows a non-linear dependence on $B$, clearly indicating light hole admixtures to the valence band ground state.
Laser-field detuning assisted optimization of exciton valley dynamics in monolayer WSe$_2$: Geometric quantum speed limit
School of Physics, State Key Laboratory of Crystal Materials, Shandong University（山东大学物理学院晶体材料国家重点实验室）；Department of Physics, Qufu Normal University（曲阜师范大学物理系）
Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in axial and radial directions is systematically investigated. Excited state relaxation leads to significant Stokes shifts for short nanorods with lengths less than 2 nm, but has little effect on the luminescence intensity. The formation of self-trapped excitons is likewise observed for short nanostructures only; longer wires exhibit fully delocalized excitons w…
This is a review of spin-dependent (polarization) properties of multicomponent exciton-polariton condensates in conditions when quasi-equilibrium mean-field Gross-Pitaevskii description can be applied. Mainly two-component (spin states $\pm1$) polariton condensates are addressed, but some properties of four-component exciton condensates, having both the bright (spin $\pm1$) and the dark (spin $\pm2$) components, are discussed. Change of polarization state of the condensate and phase transitions in applied Zeeman field are described. The properties of fractional vortices are given, in particula…
Van der Waals heterostructures composed of transition metal dichalcogenide monolayers (TMDs) are characterized by their truly rich excitonic properties which are determined by their structural, geometric and electronic properties: In contrast to pure monolayers, electrons and holes can be hosted in different materials, resulting in highly tunable dipolar manyparticle complexes. However, for genuine spatially indirect excitons, the dipolar nature is usually accompanied by a notable quenching of the exciton oscillator strength. Via electric and magnetic field dependent measurements, we demonstra…
We compute the short-circuit diffusion current of excitons in an organic solar cell, with special emphasis on fluorescence losses. The exciton diffusion length is not uniform but varies with its position within the device, even with moderate fluorescence quantum efficiency. With large quantum efficiencies, the rate of fluorescence can be strongly reduced with proper choices of the geometrical and dielectric parameters. In this way, the diffusion length can be increased and the device performance significantly improved.
Environment-assisted quantum transport (ENAQT) is the possibility of an external environment to enhance transport efficiency of quantum particles. This idea has generated much excitement over recent years, especially due to the experimentally-motivated possibility of ENAQT in photo-synthetic exciton transfer complexes. Many theoretical calculations have shown ENAQT, but the explanations for its origin differ, and a universal explanation has been elusive. Here we demonstrate a universal origin for ENAQT in quantum networks with a dephasing environment, based on a relation between exciton curren…
We study the effect of magnetic field and geometric confinement on excitons confined to a quantum ring. We use analytical matrix elements of the Coulomb interaction and diagonalize numerically the effective-mass Hamiltonian of the problem. To explore the role of different boundary conditions, we investigate the quantum ring structure with a parabolic confinement potential, which allows the wavefunctions to be expressed in terms of center of mass and relative degrees of freedom of the exciton. On the other hand, wavefunctions expressed in terms of Bessel functions for electron and hole are used…
Active control of light-matter interactions in semiconductors is critical for realizing next generation optoelectronic devices, with tunable control of the systems optical properties via external fields. The ability to manipulate optical interactions in active materials coupled to cavities via geometrical parameters, which are fixed along with dynamic control with applied fields opens up possibilities of controlling exciton lifetimes, oscillator strengths and their relaxation properties. Here, we demonstrate electrical control of exciton-plasmon polariton coupling strength of a two-dimensional…
We examine the far-field optical response, under-plane wave excitation in the presence of a static magnetic field, of core-shell nanoparticles involving a gyroelectric component, either as the inner or the outer layer, through analytic calculations based on appropriately extended Mie theory. We focus on absorption and scattering of light by bismuth-substituted yttrium iron garnet (Bi:YIG) nanospheres and nanoshells, combined with excitonic materials such as organic-molecule aggregates or two-dimensional transition-metal dichalcogenides, and discuss the hybrid character of the modes emerging fr…
We have decomposed the modeling of the field-effect transistors into the two independent parts: the current continuity based kinetics and the charge neutrality based electrostatics. The former part, that is universal for all FETs, leads to an explicit and closed form of I-V characteristics as a function of the total channel charge. The latter part, which is specific for a particular material and geometric configurations can be considered as an independent engineering task. The quantum capacitance and the interface trap density are consistently incorporated into the solution of the current cont…
We describe a design to implement a two-qubit geometric phase gate, by which a pair of electrons confined in adjacent quantum dots are entangled. The entanglement is a result of the Coulomb exchange interaction between the optically excited exciton-polaritons and the localized spins. This optical coupling, resembling the electron-electron Ruderman-Kittel-Kasuya-Yosida (RKKY) inter- actions, offers high speed, high fidelity two-qubit gate operation with moderate cavity quality factor Q. The errors due to the finite lifetime of the polaritons can be minimized by optimizing the optical pulse para…
