柔性UV光电探测器用$β$ $_2$ O $_3$涂层宽带隙半导体带的外延生长
Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector
摘要：
由于高温结晶条件和晶格匹配要求的限制，在柔性衬底上尚未实现技术上重要的$β$ $_2$ O $_3$半导体薄膜的外延生长。在本报告中，首次在柔性CeO_2（001）缓冲的哈氏合金带上外延生长了单晶$β$ -Ga $_2$ O $_3$（-201）薄膜。结果表明，CeO $_2$（001）与$β$ O $_3$（-201）具有较小的双轴晶格失配，从而诱导双畴同时外延生长.柔性光电探测器是基于外延的$β$ $_2$ O $_3$涂覆带制造的。测试结果表明，在250 nm入射光和5 V偏压下，器件的响应度为40 mA/W，开关比为1000。通过使用常规的刚性单晶衬底，这种光电性能已经在基于$β$ $_2$ O $_3$的光电探测器的主流水平内;并且更重要的是，对于超过1000个循环的弯曲测试保持稳健。此外，报告中描述的外延技术还为利用晶格参数类似于$β$ -Ga $_2$ O $_3$的材料（包括GAN、AlN和SiC）制造各种柔性外延膜器件铺平了道路。
英文摘要：
The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC.
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