The ability to tune the wavelength of light emission on a silicon chip is important for scalable photonic networks, distributed photonic sensor networks and next generation computer architectures. Here we demonstrate light emission in a chip-scale optomechanical device, with wide tunablity provided by a combination of radiation pressure and photothermal effects. To achieve this, we develop an optically active double-disk optomechanical system through implantation of erbium ions. We observe frequency tuning of photoluminescence in the telecommunications band with a wavelength range of 520 pm, green upconversion lasing with a threshold of $340\pm 70 \; μ$W, and optomechanical self-pulsing caused by the interplay of radiation pressure and thermal effects. These results provide a path towards widely-tunable micron-scale lasers for photonic networks.
We present results on the realization of an all-taper coupled, multicolour microspherical glass light source fabricated from the erbium doped fluoride glass ZBLALiP. Whispering gallery mode lasing and upconversion processes give rise to laser and fluorescent emissions at multiple wavelengths from the ultraviolet to the infrared. A single-mode tapered fibre coupling scheme, which serves to both launch pump light at 980 nm into the microresonator cavity and collect the resulting infrared lasing, is employed. We demonstrate the use of a second separate fibre taper to outcouple the upconversion sp…
The observation of photoluminescence (PL) or achieve lasing modes in alcohol solutions of dyes or other media (silica glass fibers), doped in small quantities by certain active working elements, which are dipped in the environment, do not requires start the inversion, since the main role in time of the optical pumping process is given four-photon interaction and the associated amplification of those frequency components, that result from this interaction, and participating in the PL or generation.
Yellow whispering-gallery-mode lasing from amorphous fluoride microspheres
ENSSAT, UMR 6082-CNRS-Institut FOTON, Université de Rennes（雷恩大学）；Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CEA-CNRS- ENSICAEN, Université de Caen Normandie（卡昂诺曼底大学）
Photoluminescence is a phenomenon of significant interest due to its wide range of technological applications in plasmonics, nanolasers, spasers, lasing spasers, loss compensation and gain in metamaterials, and luminescent media. Nanostructured materials are known to have very different luminescence characteristics to bulk samples or planar films. Here we show that by engineering a nanostructured meta-surface, we can choose the position of photoluminescence absorption and emission lines of thin gold films. The nanostructuring also aids to strong enhancement of the emission from gold, by a fact…
Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs having nano-pan-cake shape have height of ~2 nm, lateral size of 20-50 nm and density of ~5x109 cm-2. Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character indicating In-As intermixing, as confirmed by band structure calculations. We observed l…
Universidad Autónoma de Madrid（马德里自治大学）；Università di Padova（帕多瓦大学）；Wrocław University of Science and Technology（弗罗茨瓦夫科技大学）；EPFL（洛桑联邦理工学院）；Univ Rennes, INSA Rennes, CNRS, Institut FOTON – UMR 6082（雷恩大学、雷恩国立应用科学学院、法国国家科学研究中心、FOTON研究所）；Instituto Nicolás Cabrera, Universidad Autónoma de Madrid（尼古拉斯·卡布里拉研究所，马德里自治大学）；Instituto de Física de la Materia Condensada (IFIMAC), Universidad Autónoma de Madrid（凝聚态物理研究所（IFIMAC），马德里自治大学）
Visible Imaging of Incoherent 1200-nm Light via Triplet--Triplet Annihilation Upconversion
Stanford University（斯坦福大学）；University of Wisconsin–Madison（威斯康星大学麦迪逊分校）；University of New South Wales（新南威尔士大学）；SLAC National Accelerator Laboratory（SLAC国家加速器实验室）；Columbia University（哥伦比亚大学）；Flatiron Institute（平井研究所）
Lead-halide perovskites are highly promising for various optoelectronic applications including laser devices. However, fundamental photophysics describing the lasing behaviour in this material family have not been investigated systematically, and thus the detailed lasing mechanism remains veiled. Here, we demonstrate that an all-inorganic perovskite shows a lasing emission based on a novel principle. A series of photoluminescence experiment results reveals that the excited state of CsPbBr3 single crystal exhibits free carrier nature. In a form of microcavity, on the other hand, the CsPbBr3 sin…
Photoluminescence (PL) has become a common tool to characterize various properties of single-walled carbon nanotube (SWCNT) chirality distribution and the level of tube individualization in SWCNT samples. Most PL studies employ conventional lamp light sources whose spectral distribution is filtered with a monochromator but this results in a still impure spectrum with a low spectral intensity. Tunable dye lasers offer a tunable light source which cover the desired excitation wavelength range with a high spectral intensity, but their operation is often cumbersome. Here, we present the design and…
Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, w…
