arXivDaily arXiv每日学术速递 周一至周五更新
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arXiv 2007.12202cond-mat.mes-hall
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Tuning supercurrent in Josephson field effect transistors using h-BN dielectric

Fatemeh Barati, Josh P. Thompson, Matthieu C. Dartiailh, Kasra Sardashti, William Mayer, Joseph Yuan, Kaushini Wickramasinghe, K. Watanabe, T. Taniguchi, Hugh C… 展开作者

Fatemeh Barati, Josh P. Thompson, Matthieu C. Dartiailh, Kasra Sardashti, William Mayer, Joseph Yuan, Kaushini Wickramasinghe, K. Watanabe, T. Taniguchi, Hugh Churchill, Javad Shabani

英文摘要:

The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed by dry transfer using a van der Waals-mediated pick up process. We discuss the fabrication process that enables compatibility between layered material transfer and Al-InAs heterostructures to avoid chemical reactions and unintentional doping that could affect the characteristics of the JJ-FET. We achieve full gate-tunablity of supercurrent by using only 5~nm thick h-BN flakes. We contrast our process with devices fabricated using a conventional AlO$_{\rm x}$ gate dielectric and show that h-BN could be an excellent competing dielectric for JJ-FET devices. We observe that the product of normal resistance and critical current, I$_{\rm c}$R$_{\rm n}$, is comparable for both types of devices, but strikingly higher R$_{\rm n}$ for the h-BN-based devices indicating that the surface is doped less compared to AlO$_{\rm x}$ gate dielectric.

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