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arXiv 2007.06313cond-mat.mes-hall
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MoS $_2$中线缺陷处的能带弯曲和价带量子化

Band Bending and Valence Band Quantization at Line Defects in MoS$_2$

Clifford Murray, Camiel van Efferen, Wouter Jolie, Jeison Antonio Fischer, Joshua Hall, Achim Rosch, Arkady V. Krasheninnikov, Hannu-Pekka Komsa, Thomas Michely

摘要:

用高分辨扫描隧道谱研究了准自支撑MoS $_2$在$5$ K温度下垂直于一维缺陷的电子结构的变化。发现4的价带和导带向线缺陷方向有很强的向上弯曲|4E镜像孪生边界和岛边缘,但不适用于4| 4P镜像孪生边界。在价带中的量子化能级被观察到,无论向上的能带弯曲发生。聚焦共同点4| 4E镜像孪晶界,密度泛函理论计算给出了其带电的估计,与静电模型吻合较好。我们表明,线电荷也可以评估从填充的边界本地化的电子带,从而我们提供了一个测量的理论预测的量化极化电荷在MoS $_2$镜像孪晶边界。这些计算阐明了能带弯曲和充电的起源在这些一维缺陷的MoS $_2$。的4| 4E镜像孪晶边界不仅由于能带弯曲而损害电子和空穴的电荷传输,而且空穴还受到势垒的影响,这是从边界两侧的量子化能量景观的独立性推断出来的。

英文摘要:

The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantized energy levels in the valence band are observed wherever upwards band bending takes place. Focusing on the common 4|4E mirror twin boundary, density functional theory calculations give an estimate of its charging, which agrees well with electrostatic modeling. We show that the line charge can also be assessed from the filling of the boundary-localized electronic band, whereby we provide a measurement of the theoretically predicted quantized polarization charge at MoS$_2$ mirror twin boundaries. These calculations elucidate the origin of band bending and charging at these 1D defects in MoS$_2$. The 4|4E mirror twin boundary not only impairs charge transport of electrons and holes due to band bending, but holes are additionally subject to a potential barrier, which is inferred from the independence of the quantized energy landscape on either side of the boundary.

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