二维GeAs的场发射
Field emission from two-dimensional GeAs
摘要：
GeAs是IV-V族的层状材料，其在电子和光电子器件中的可能应用正引起越来越多的关注。在这项研究中，剥离的多层GeAs纳米片的结构特征，并用作背栅场效应晶体管的沟道。结果表明，它们的栅调制p型导电降低暴露于光或电子束。此外，场发射电流的观测表明GeAs纳米片适合作为电子发射的冷阴极，为二维GeAs在真空电子学中的应用开辟了新的前景。场致发射的开启电场约为80 V/μm，电流密度大于10 A/cm ^2，符合一般的福勒-诺德海姆模型，具有很高的重现性。
英文摘要：
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. Field emission occurs with a turn-on field of ~80 V/μm and attains a current density higher than 10 A/cm^2, following the general Fowler-Nordheim model with high reproducibility.
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