We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases.
Surface States in Strain-Induced Nodal-Line Topological Semiconductors
Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU（材料物理中心（CFM-MPC），CSIC-UPV/EHU联合中心）；Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Química, University of the Basque Country UPV/EHU（巴斯克大学化学学院先进聚合物与材料系：物理、化学与技术）；Donostia International Physics Center (DIPC)（圣塞巴斯蒂安国际物理中心（DIPC））；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯基克，巴斯克科学基金会）；Department of Physics and Astronomy, Ohio University（俄亥俄大学物理与天文学系）
Magnetocaloric effect for the topological semimetal Co$_3$Sn$_2$S$_2$ due to the antiferromagnetic coupling of the bulk and surface spin-polarized phases
Interplay between strain and size quantization in a class of topological insulators based on inverted-band semiconductors
Air Force Research Laboratory（空军研究实验室）；KBR（KBR公司）；Department of Physics and Astronomy, Ohio University（俄亥俄大学物理与天文系）；Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU（材料物理中心（CFM-MPC），CSIC-UPV/EHU联合中心）；Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Química, University of the Basque Country UPV/EHU（巴斯克大学化学学院先进聚合物与材料系：物理、化学与技术）；Donostia International Physics Center (DIPC)（圣塞巴斯蒂安国际物理中心）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯基，巴斯克科学基金会）
Tunable Intrinsic Plasmons due to Band Inversion in Topological Materials
能带反转在拓扑绝缘体和拓扑半金属中产生了丰富的物理效应。研究发现，具有墨西哥帽色散的反向能带结构可以增强带间关联，从而导致强的本征等离子体激元激发。它的频率范围从几个$\mathrm{meV}$到几十个$\mathrm{meV}$，并且可以通过外场进行有效的调谐。电子-空穴不对称项将等离子体激元激发的峰分裂成双峰。这种等离子体激元激发的命运和性质也可以作为探针来表征即使在轻掺杂系统中的拓扑相。我们数值模拟了带反转对三维强拓扑绝缘体，V-或Cr-掺杂（Bi，Sb）$_2$ Te $_3$，支持量子反常霍尔态的磁掺杂薄膜中的等离子体激元激发的影响。因此，我们的工作揭示了一些新的光拓扑材料在等离子体激元的潜在应用。
