基于分析物理的纳米片和纳米线FET电子沟道密度建模
Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire FETs
摘要：
我们提出了一个通用的物理为基础的方法，准确的分析计算的场效应晶体管的沟道电荷密度的外部栅极偏置的函数。这种方法是基于一个一致的考虑基本静电方程作为一个平衡的电势和化学势，使我们能够在一个统一的方式获得明确的解析表达式连续描述亚阈值和阈值以上的区域在纳米片（对称和不对称）和纳米线FET。两个概念上不同的定义的唯象阈值电压一致的介绍和讨论。
英文摘要：
We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of basic electrostatic equation as a balance of electric and chemical potentials which allows us to obtain in a unified way the explicit analytic expressions continuously de-scribing the subthreshold and above threshold regions in nanosheet (symmetric and asymmetric) and nanowire FETs. Two conceptually different definitions of phenomenological threshold voltage are consistently introduced and discussed.
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