真空环境下用3 Ω扫描热显微镜进行热物性的频域测量
Frequency domain measurements of thermal properties using 3omega-Scanning Thermal Microscope in a vacuum environment
摘要：
材料的热性能表征在纳米尺度仍然是一个挑战，即使在开发特定的表征技术，如扫描热显微镜（SThM）的进展。在目前的工作中，我们提出了一个详细的程序的基础上结合使用的SThM探头表征和其有限元建模（FEM）恢复在高真空下实现的operando 3 omega测量。该方法基于两步方法：（i）在非接触模式下对探针的电气和频率行为进行精细描述，以确定SThM尖端的固有参数，（b）通过将3 Ω测量值与接触模式下探针操作的模拟值进行比较，最小化我们模型的自由参数，即接触热阻。这种方法使我们能够准确地测量探头的热界面电阻，作为三种不同材料（硅，二氧化硅和金）的尖端和表面之间施加的强度的函数。此外，FEM建模提供了关于3 omega-SThM技术灵敏度的见解，作为测量材料热导率的探针/样品界面电阻的函数，为定量SThM测量铺平了道路。
英文摘要：
Material thermal properties characterization at nanoscales remains a challenge even if progresses were done in developing specific characterization techniques like the Scanning Thermal Microscopy (SThM). In the present work, we propose a detailed procedure based on the combined use of a SThM probe characterization and its Finite Element Modeling (FEM) to recover in-operando 3omega measurements achieved under high vacuum. This approach is based on a two-step methodology: (i) a fine description of the probe s electrical and frequency behaviors in out of contact mode to determine intrinsic parameters of the SThM tip, (b) a minimization of the free parameter of our model, i.e. the contact thermal resistance, by comparing 3omega measurements to our simulations of the probe operating in contact mode. Such an approach allows us to accurately measure thermal interface resistances of the probe as a function of the strength applied between the tip and the surface for three different materials (silicon, silica and gold). In addition, FEM modeling provides insights about the 3omega-SThM technique sensitivity, as a function of probe / sample interface resistance to measure material thermal conductivity, paving the way to quantitative SThM measurements.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
