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arXiv 2007.04122cond-mat.mes-hall
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微波诱导Rashba相互作用产生的磁化强度

Magnetization generated by microwave-induced Rashba interaction

O. Entin-Wohlman, R. I. Shekhter, M. Jonson, A. Aharony

摘要:

我们表明,一个可控的直流磁化是积累在一个结,其中包括一个量子点耦合到非磁性水库,如果该结受到一个随时间变化的自旋轨道相互作用。后者是由门控结的微波辐射产生的交流电场引起的。磁化是由隧道通过结的电子的非弹性自旋翻转散射引起的,并且取决于电场的极化:圆极化场导致最大效应,而线性极化场则没有效应。此外,当微波光子能量变得大于量子点上的单个能级与引线中的公共化学势之间的差的绝对值时,磁化强度作为阶跃函数(被温度平滑)增加。

英文摘要:

We show that a controllable dc magnetization is accumulated in a junction comprising a quantum dot coupled to non-magnetic reservoirs if the junction is subjected to a time-dependent spin-orbit interaction. The latter is induced by an ac electric field generated by microwave irradiation of the gated junction. The magnetization is caused by inelastic spin-flip scattering of electrons that tunnel through the junction, and depends on the polarization of the electric field: a circularly polarized field leads to the maximal effect, while there is no effect in a linearly polarized field. Furthermore, the magnetization increases as a step function (smoothened by temperature) as the microwave photon energy becomes larger than the absolute value of the difference between the single energy level on the quantum dot and the common chemical potential in the leads.

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