GeO2薄膜晶化为α-石英：从球晶到单晶
Crystallization of GeO2 thin films into alpha-quartz: from spherulites to single crystals
摘要：
压电石英SiO2晶体作为振荡器广泛应用于工业中。石英及其相关的硅酸盐矿物作为一种天然矿物，也是地学和矿物学研究的热点。然而，石英晶体的成核和生长很难控制，也没有完全了解。在这里，我们报告了成功的固态晶化薄膜的非晶GeO 2到石英的各种基板上，包括Al 2 O 3，MgAl 2 O 4，MgO，LaAl O 3和SrTiO 3。在相对较低的退火温度下，结晶过程是球晶：纤维从成核中心径向生长，晶格沿生长方向旋转，旋转角度与到核心的距离之间呈线性关系。对于越来越高的退火温度，石英晶体开始形成。样品的边缘起着重要的作用，促进成核，然后向内生长，直到整个薄膜结晶。控制生长允许合成单晶石英。我们的研究揭示了石英成核和生长过程的复杂性，并为进一步的研究提供了见解。
英文摘要：
Piezoelectric quartz SiO2 crystals are widely used in industry as oscillators. As a natural mineral, quartz and its relevant silicates are also of interest of geoscience and mineralogy. However, the nucleation and growth of quartz crystals is difficult to control and not fully understood. Here we report successful solid state crystallization of thin film of amorphous GeO2 into quartz on various substrates including Al2O3, MgAl2O4, MgO, LaAlO3 and SrTiO3. At relatively low annealing temperatures, the crystallization process is spherulitic: with fibers growing radially from the nucleation centers and the crystal lattice rotating along the growth direction with a linear dependence between the rotation angle and the distance to the core. For increasingly higher annealing temperatures, quartz crystals begin to form. The edges of the sample play an important role facilitating nucleation followed by growth sweeping inward until the whole film is crystallized. Control of the growth allows single crystalline quartz to be synthesized. Our study reveals the complexity of the nucleation and growth process of quartz and provides insight for further studies.
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