掺铊PbTe单晶微丝的张阻效应
Tensoresistive Effect in Single Crystal Microwires of Pbte Doped with Tl
摘要：
本文报道了Pb_（1-x）Tl_xTe（x=0.0000 - 0.0025，d = 5 - 20 μ m）单晶细丝张阻效应的室温测量结果。对于对应于铊浓度x ~ 0.0025的化学组成的样品，观察到与未掺杂样品相比，张阻效应（晶体的每单位长度的弹性伸长的电阻变化）的本质增加。各种机制，可以导致可观察到的异常，包括共振散射进行了讨论。获得的实验结果使我们能够假设，所观察到的特性可以解释的基础上的模型的杂质带的Tl在PbTe。
英文摘要：
Results of room temperature measurements of tensoresistive effect of thin single crystal microwires of Pb1-xTlxTe (x=0.0000 - 0.0025, d = 5 - 20 micrometers) obtained from the melted compound of corresponding composition by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium x ~0,0025 an essential increase of tensoresistive effect (resistance changes for elastic elongations per unit length of a crystal) in comparison with nondoped samples is observed. Various mechanisms which can lead to observable anomalies, including resonance scattering are discussed. Obtained experimental results allow us to suppose that the observed peculiarities can be interpreted on the basis of model of an impurity band of Tl in PbTe.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
