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arXiv 2007.03689cond-mat.mes-hallquant-ph
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半导体量子点量子比特噪声谱的微观浴效应

Microscopic bath effects on noise spectra in semiconductor quantum dot qubits

Seongjin Ahn, S. Das Sarma, J. P. Kestner

摘要:

当系统仅与较大浴的一小部分热耦合时,该“子浴”的温度(更准确地说,内能)在由较大浴限定的平均温度附近的统计波动可能变得显著。我们发现,这些温度波动一般会引起1/f-样的噪声功率谱密度,即使是一个单一的两级系统。我们将这些结果扩展到波动的分布,找到相应的修改杜塔-霍恩关系。然后我们考虑了硅量子点量子比特中电荷噪声的具体情况,并表明最近的实验数据[E. J. Connors等人,Phys. Rev. B 100,165305(2019)]可以建模为由少至两个两级波动器产生,并且考虑子浴尺寸提高了拟合的质量。

英文摘要:

When a system is thermally coupled to only a small part of a larger bath, statistical fluctuations of the temperature (more precisely, the internal energy) of this "sub-bath" around the mean temperature defined by the larger bath can become significant. We show that these temperature fluctuations generally give rise to 1/f-like noise power spectral density from even a single two-level system. We extend these results to a distribution of fluctuators, finding the corresponding modification to the Dutta-Horn relation. Then we consider the specific situation of charge noise in silicon quantum dot qubits and show that recent experimental data [E. J. Connors, et al., Phys. Rev. B 100, 165305 (2019)] can be modeled as arising from as few as two two-level fluctuators, and accounting for sub-bath size improves the quality of the fit.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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