Reliable operation of photonic integrated circuits at cryogenic temperatures would enable new capabilities for emerging computing platforms, such as quantum technologies and low-power cryogenic computing. The silicon-on-insulator platform is a highly promising approach to developing large-scale photonic integrated circuits due to its exceptional manufacturability, CMOS compatibility and high component density. Fast, efficient and low-loss modulation at cryogenic temperatures in silicon, however, remains an outstanding challenge, particularly without the addition of exotic nonlinear optical materials. In this paper, we demonstrate DC-Kerr-effect-based modulation at a temperature of 5 K at GHz speeds, in a silicon photonic device fabricated exclusively within a CMOS process. This work opens up the path for the integration of DC Kerr modulators in large-scale photonic integrated circuits for emerging cryogenic classical and quantum computing applications.
High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperat…
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better performance and thermal insulation than electrical wires and are imperative for true quantum communication. Silicon PICs have matured for room temperature applications but their cryogenic performance is limited by the absence of efficient low temperature electro-optic (EO) modulation. While detectors and lasers perform better at low temperature, cryogenic opt…
Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large he…
A fundamental challenge of the quantum revolution is to efficiently interface the quantum computing systems operating at cryogenic temperatures with room temperature electronics and media for high data-rate communication. Current approaches to control and readout of such cryogenic computing systems use electrical cables, which prevent scalability due to their large size, heat conduction, and limited bandwidth1. A more viable approach is to use optical fibers which allow high-capacity transmission and thermal isolation. A key component in implementing photonic datalinks is a cryogenic optical m…
Scalable, high speed data transfer between cryogenic (0.1-4 K) and room temperature environments is instrumental in a broad range of fields including quantum computing, superconducting electronics, single photon imaging and space-based communications. A promising approach to overcome the limitations of conventional wire-based readout is the use of optical fiber communication. Optical fiber presents a 100-1,000x lower heat load than conventional electrical wiring, relaxing the requirements for thermal anchoring, and is also immune to electromagnetic interference, which allows routing of sensiti…
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. As an example of the potential of the platform, we demonstrate a compact (~40 μm diameter) silicon nitride ring resonator modulator operating at 780 nm with intrinsic…
Many technologies in quantum photonics require cryogenic conditions to operate. However, the underlying platform behind active components such as switches, modulators and phase shifters must be compatible with these operating conditions. To address this, we demonstrate an electro-optic polarisation converter for 1550nm light at 0.8K in titanium in-diffused lithium niobate waveguides. To do so, we exploit the electro-optic properties of lithium niobate to convert between orthogonal polarisation modes with a fiber-to-fiber transmission >43%. We achieve a modulation depth of 23.6 +/-3.3dB and a c…
We introduce chip-integrated visible light communication-band modulators based on niobium (Nb) metallic plasmonic nano-antenna arrays. Our plasmonic nano-devices provide strong sensitivity to the polarization of the incident visible light and the geometrical parameters of their subwavelength nanoscale building blocks. Moreover, they offer optical modulation properties with modulation depth MD = 60% at resonant wavelength lambda= 716 nm, at room temperature. By engineering the photo response of the Nb nano-device arrays, we observe a maximum extinction A(lambda)= 1- R(lambda}) = 95 % at resonan…
Faraday and Kerr rotations are magnetooptical (MO) effects used for rotating the polarization of light in transmission and reflection from a magnetized medium, respectively. MO effects combined with intrinsically fast magnetization reversal, which can go down to a few tens of femtoseconds or less, can be applied in magnetooptical spatial light modulators (MOSLMs) promising for nonvolatile, ultrafast, and high-resolution spatial modulation of light. With the recent progress in low-power switching of magnetic and MO materials, MOSLMs may lead to major breakthroughs and benefit beyond state-of-th…
Mode Division Multiplexing (MDM) technique using higher order Orbital Angular Momentum (OAM) carrying modes through a channelized bandwidth provides enhanced capacity communication systems. OAM based high-dimensional Quantum Key Distribution (QKD) encrypted channels also improve transmission rate and security. All-optical mode-selective spatial distribution manipulation is a significant function in implemented MDM and QKD networks. This paper proposes a novel versatile-designed integrated optical device with Y$_{cut}$ ridge Periodically Poled Lithium Niobate (PPLN) photonic wire configuration …
Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon by the use of DC Kerr effect. Although some theoretical and experimental studies have shown its existence in silicon, the DC Kerr effect in optical modulation have led to a negligible contribution so f…
Implementing optical-frequency combs with integrated photonics will enable wider use of precision timing signals.Here, we explore the generation of an octave-span, Kerr-microresonator frequency comb, using hybrid integration ofan InP distributed-feedback laser and a SiN photonic-integrated circuit. We demonstrate electrically pumped and fiber-packaged prototype systems, enabled by self-injection locking. This direct integration of a laser and a microresonatorcircuit without previously used intervening elements, like optical modulators and isolators, necessitates understand-ing self-injection-l…
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrar…
