从单层$WS_{2}$到NIR的定向能量转移发射PbS-CdS量子点
Directed Energy Transfer from Monolayer $WS_{2}$ to NIR Emitting PbS-CdS Quantum Dots
摘要：
二维（2D）过渡金属二硫属化物（TMD）和无机半导体零维（0 D）量子点（QD）的异质结构提供了独特的电荷和能量转移途径，这可能形成新型光电子器件的基础。到目前为止，大多数都集中在从QD到TMD的电荷转移和能量转移，即从0 D到2D。在这里，我们提出了一个从二维到一维材料的能量转移过程的研究，特别是探索从单层的二硫化钨（$WS_{2}$）的能量转移到近红外（NIR）发射硫化铅-硫化镉（PbS-CdS）量子点。$WS_{2}$在可见光区的高吸收截面与PbS QD系统潜在的高光致发光（PL）效率相结合，使其成为一种有趣的供体-受体系统，其可以有效地使用WS 2作为天线和QD作为可调谐发射器，在这种情况下，将发射能量降低数百meV。我们使用光致发光激发（PLE）和PL显微镜研究了能量转移过程，并表明58%的QD PL是由于来自$WS_{2}$的能量转移而产生的。时间分辨光致发光（TRPL）显微镜的研究表明，能量转移过程是快于本征PL猝灭的陷阱状态中的$WS_{2}$，从而允许有效的能量转移。我们的研究结果表明，量子点可以被用来作为可调谐和高PL效率的发射器，以修改的TMD的发射特性。这种TMD/QD异质结构可以应用于发光技术、人工光收集系统，或者用于在各种逻辑和计算应用中光学地读出TMD器件的状态
英文摘要：
Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) and inorganic semiconducting zero-dimensional (0D) quantum dots (QDs) offer unique charge and energy transfer pathways which could form the basis of novel optoelectronic devices. To date, most has focused on charge transfer and energy transfer from QDs to TMDs, i.e. from 0D to 2D. Here, we present a study of the energy transfer process from a 2D to 0D material, specifically exploring energy transfer from monolayer tungsten disulphide ($WS_{2}$) to near infrared (NIR) emitting lead sulphide-cadmium sulphide (PbS-CdS) QDs. The high absorption cross section of $WS_{2}$ in the visible region combined with the potentially high photoluminescence (PL) efficiency of PbS QD systems, make this an interesting donor-acceptor system that can effectively use the WS2 as an antenna and the QD as a tuneable emitter, in this case downshifting the emission energy over hundreds of meV. We study the energy transfer process using photoluminescence excitation (PLE) and PL microscopy, and show that 58% of the QD PL arises due to energy transfer from the $WS_{2}$. Time resolved photoluminescence (TRPL) microscopy studies show that the energy transfer process is faster than the intrinsic PL quenching by trap states in the $WS_{2}$, thus allowing for efficient energy transfer. Our results establish that QDs could be used as tuneable and high PL efficiency emitters to modify the emission properties of TMDs. Such TMD/QD heterostructures could have applications in light emitting technologies, artificial light harvesting systems or be used to read out the state of TMD devices optically in various logic and computing applications
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
