Enhanced four-wave-mixing and 3rd order optical nonlinearity in SiN nanowires integrated with graphene oxide films
Yang Qu, Jiayang Wu, Yunyi Yang, Yuning Zhang, Yao Liang, Houssein El Dirani, Romain Crochemore, Pierre Demongodinc, Corrado Sciancalepore, Christian Grillet, C… 展开作者
Yang Qu, Jiayang Wu, Yunyi Yang, Yuning Zhang, Yao Liang, Houssein El Dirani, Romain Crochemore, Pierre Demongodinc, Corrado Sciancalepore, Christian Grillet, Christelle Monat, Baohua Jia, David J. Moss
备注：
27 pages, 9 figures, 69 references. arXiv admin note: text overlap with arXiv:2002.04158
Layered 2D graphene oxide (GO) films are integrated with silicon nitride (SiN) waveguides to experimentally demonstrate an enhanced Kerr nonlinearity via four wave mixing (FWM). Owing to the strong light matter interaction between the SiN waveguides and the highly nonlinear GO films, the FWM performance of the hybrid waveguides is significantly improved. SiN waveguides with both uniformly coated and patterned GO films are fabricated based on a transfer free, layer by layer GO coating method together with standard photolithography and lift off processes, yielding precise control of the film thickness, placement and coating length. Detailed FWM measurements are carried out for the fabricated devices with different numbers of GO layers and at different pump powers. By optimizing the trade off between the nonlinearity and loss, we obtain a significant improvement in the FWM conversion efficiency of 7.3 dB for a uniformly coated device with 1 layer of GO and 9.1 dB for a patterned device with 5 layers of GO. We also obtain a significant increase in FWM bandwidth for the patterned devices. A detailed analysis of the influence of pattern length and position on the FWM performance is performed. Based on the FWM measurements, the dependence of GOs third-order nonlinearity on layer number and pump power is also extracted, revealing interesting physical insights about the 2D layered GO films. Finally, we obtain an enhancement in the effective nonlinear parameter of the hybrid waveguides by over a factor of 100. These results verify the enhanced nonlinear optical performance of SiN waveguides achievable by incorporating 2D layered GO films.
Optical devices with metastable states controlled with light (optical flip-flops) are needed in data storage, signal processing and displays. Although non-volatile optical memory relying on structural phase transitions in chalcogenide glasses has been widely used for optical data storage, beyond that, weak optical nonlinearities have hindered the development of low-power bistable devices. Here we report on a new type of volatile optical bistability in a resonant hybrid nano-optomechanical device, comprising of a pair of anchored nanowires decorated with plasmonic metamolecules. The nonlinearit…
Layered 2D GO films are integrated with silicon on insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through selfphase modulation (SPM). The GO films are integrated with SOI nanowires using a large area, transfer free, layer by layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybr…
We report enhanced nonlinear optics in nanowires, waveguides, and ring resonators by introducing layered two-dimensional (2D) graphene oxide (GO) films through experimental demonstration. The GO films are integrated on silicon-on-insulator nanowires (SOI), high index doped silica glass, and silicon nitride (SiN) waveguides and microring resonators (MRRs), to demonstrate an improved optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). By using a large-area, transfer-free, layer-by-layer GO coating method with photolithography and lift-off processes, we integrate GO films…
We report enhanced nonlinear optics in complementary metal oxide semiconductor compatible photonic platforms through the use of layered two dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon on insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four wave mixing (FWM). The GO films are integrated using a large area, transfer free, layer by layer method while the film placement and size are controlled by photolithograp…
Two-photon pumped lead halide perovskite nanowire lasers
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Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the use of single-crystalline NbN thin films for superconducting nanowire single-photon detectors (SNSPDs). Grown by molecular beam epitaxy (MBE) at high temperature on nearly lattice-matched AlN-on-sapphire substrates, the NbN films exhibit high degree of uniformity and homogeneity. Even with relatively thick films, the fabricated nanowire detectors show saturated internal efficiency at near-IR wavelengths, demonstrating the potential of MBE-grown NbN for realiz…
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Semiconductor nanowires (NWs) are promising for realizing various on-chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light-matter interaction. However, high-intensity pulsed pump lasers are typically needed to exploit their optical nonlinearity because light couples poorly with nanometric-size wires. Here, we demonstrate microwatts continuous-wave light pumped second harmonic generation (SHG) in AlGaAs NWs by integrating them with silicon planar photonic crystal cavities. Light-NW coupling is enhanced effectively by the extremely localized cavity mode at t…
We demonstrate enhanced four-wave mixing (FWM) in doped silica waveguides integrated with graphene oxide (GO) layers. Owing to strong mode overlap between the integrated waveguides and GO films that have a high Kerr nonlinearity and low loss, the FWM efficiency of the hybrid integrated waveguides is significantly improved. We perform FWM measurements for different pump powers, wavelength detuning, GO coating lengths, and number of GO layers. Our experimental results show good agreement with theory, achieving up to ~9.5-dB enhancement in the FWM conversion efficiency for a 1.5-cm-long waveguide…
We experimentally demonstrate enhanced spectral broadening of femtosecond optical pulses af-ter propagation through silicon-on-insulator (SOI) nanowire waveguides integrated with two-dimensional (2D) graphene oxide (GO) films. Owing to the strong mode overlap between the SOI nanowires and the GO films with a high Kerr nonlinearity, the self-phase modulation (SPM) process in the hybrid waveguides is significantly enhanced, resulting in greatly improved spectral broadening of the femtosecond optical pulses. A solution-based, transfer-free coating method is used to integrate GO films onto the SOI…
Using a hydrodynamic approach we examine bulk- and surface-induced second and third harmonic generation from semiconductor nanowire gratings having a resonant nonlinearity in the absorption region. We demonstrate resonant, broadband and highly efficient optical frequency conversion: contrary to conventional wisdom, we show that harmonic generation can take full advantage of resonant nonlinearities in a spectral range where nonlinear optical coefficients are boosted well beyond what is achievable in the transparent, long-wavelength, non-resonant regime. Using femtosecond pulses with approximate…
The Kerr nonlinear optical performance of silicon nanowire waveguides integrated with 2D layered graphene oxide (GO) films is theoretically studied and optimized based on experimentally measured linear and nonlinear optical parameters of the GO films. The strong mode overlap between the silicon nanowires and highly nonlinear GO films yields a significantly enhanced Kerr nonlinearity for the hybrid waveguides. A detailed analysis for the influence of waveguide geometry and GO film thickness on the propagation loss, nonlinear parameter, and nonlinear figure of merit (FOM) is performed. The resul…
We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LN). Using a 250 um-long NbN superconducting nanowire lithographically defined on top of a 125 um-long LN nanowaveguide, on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rate and timing jitter. As LN possesses high second-order nonlinear \c{hi}(2) and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct small scale fully-integrated quantum photonic chip which includes sin…
We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled single photons. Using pulsed excitation, we demonstrate on-demand operation with a single photon purity of 98.5% when exciting at saturation in a device with a source-fibre collection efficiency of 35…
Plasmonic waveguides offer the unique possibility to confine light far below the diffraction limit. Past room temperature experiments of single quantum emitters coupled to such waveguides have mainly focused on efficient channelling of the spontaneous emission into waveguide modes after a linear optical excitation. However, only the simultaneous interaction of the emitter with multiple plasmonic fields would lead to functionality in a plasmonic circuit. Here, we demonstrate the nonlinear optical interaction of a single molecule and propagating plasmons. An individual terrylene diimide (TDI) mo…
High-quality ultra-thin films of niobium nitride (NbN) are developed by plasma-enhanced atomic layer deposition (PEALD) technique. Superconducting nanowire single-photon detectors (SNSPDs) patterned from this material exhibit high switching currents and saturated internal efficiencies over a broad bias range at 1550 nm telecommunication wavelength. Statistical analyses on hundreds of fabricated devices show near-unity throughput yield due to exceptional homogeneity of the films. The ALD-NbN material represents an ideal superconducting material for fabricating large single-photon detector array…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the o…
We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission…
