Mg掺杂对（In，Ga）N超晶格中In吸附和In掺入的影响
Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices
摘要：
我们提出了一个详细的调查机制，在发挥纳入在GAN（0001）表面在等离子体辅助分子束外延（PAMBE）。首先，我们已经研究了在镁的存在下，无论是没有或有N供应从等离子体电池的四极杆质谱（QMS）的视线解吸动力学。第二，我们探索了在（In，Ga）N/GAN超晶格（SL）形成的过程中，在（In N/GAN）重复供应10次的周期中的不同时间掺杂Mg的效果。通过X射线衍射（XRD）和二次离子质谱（SIMS）对这些SL的补充非原位研究，我们发现，在单层厚的（In，Ga）N层中，当Mg不同时供给In时，In含量最大，而当Mg不同时供给In时，In含量急剧下降。相比之下，Mg浓度强烈增加的（In，Ga）N单层相比，GAN的障碍。我们将这一发现归因于In对Mg的表面活性剂效应，其在N存在下降低了Mg在GAN中的结合能。
英文摘要：
We present a detailed investigation of the mechanisms at play for the incorporation of In and Mg on the GaN(0001) surface during plasma-assisted molecular beam epitaxy (PAMBE). First, we have studied the kinetics of In desorption in the presence of Mg either without or with N supply from the plasma cell by quadrupole mass spectrometry (QMS) in the line of sight. Second, we have explored the effect of Mg doping at a different time along the cycle of (InN/GaN) supply repeated 10 times to form (In,Ga)N/GaN superlattices (SLs). By the complementary ex-situ investigation of these SLs by X-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS), we found that in monolayer-thick (In,Ga)N layer, the In content was maximized when Mg was not supplied simultaneously to In, but it drastically decreased otherwise. In contrast, the Mg concentration strongly increased in the (In,Ga)N monolayers compared to the GaN barriers. We attribute this finding to the surfactant effect of In for Mg, which decreases the binding energy of Mg in GaN in presence of N.
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