单层石墨烯场效应管低频噪声的偏压相关变化
Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
摘要：
本文首次研究了石墨烯晶体管（GFET）中的低频噪声（LFN）变化。LFN从一个足够的统计样本的长沟道溶液栅单层GFET的测量在很宽的工作条件范围内，而基于物理的分析模型推导出，占LFN方差的偏置依赖性与显着的性能。理论证明和实验验证了GFET中LFN偏差源于产生LFN的物理机制。因此，由于捕获/去捕获过程和迁移率波动Dm（它们是LFN的主要原因）导致的载流子数DN同样将其可变性定义为其平均值。DN解释了归一化LFN方差相对于栅极偏压的M形，在电荷中性点（CNP）处具有最小值，因为它是归一化LFN平均值的情况，而Dm仅在CNP附近贡献方差和平均值。陷阱的统计性质实验表明，不同于经典的泊松分布在硅氧化物器件，这可能是由电解质界面在GFET的研究。总体而言，GFET技术的发展仍处于不成熟的阶段，这可能会导致关键的不一致性，影响相同工艺的GFET的标度律。
英文摘要：
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of operating conditions while a physics-based analytical model is derived that accounts for the bias dependence of LFN variance with remarkable performance. It is theoretically proved and experimentally validated that LFN deviations in GFETs stem from physical mechanisms that generate LFN. Thus, carrier number DN due to trapping/detrapping process and mobility fluctuations Dm which are the main causes of LFN, define its variability likewise as its mean value. DN accounts for an M-shape of normalized LFN variance versus gate bias with a minimum at the charge neutrality point (CNP) as it was the case for normalized LFN mean value while Dm contributes only near the CNP for both variance and mean value. Trap statistical nature is experimentally shown to differ from classical Poisson distribution at silicon-oxide devices, and this is probably caused by electrolyte interface in GFETs under study. Overall, GFET technology development is still in a premature stage which might cause pivotal inconsistencies affecting the scaling laws in GFETs of the same process.
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