Ferroelectric topological objects (e.g. vortices, skyrmions) provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future configurable nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels along two types of exotic topological defects, i.e. the topological cores of (i) a quadrant vortex domain structure and (ii) a center domain (monopole-like) structure confined in high quality BiFeO3 nanoisland array, abbreviated as the vortex core and the center core. We unveil via phase-field simulations that the superfine (< 3 nm) metallic conduction channels along center cores arise from the screening charge carriers confined at the core whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be repeatedly and reversibly created and deleted by manipulating the two topological states via an electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices such as ultrahigh density nonvolatile memory.
Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of electrical conduction also at 180° ferroelectric domain walls in the simpler tetragonal ferroelectric PZT thin films. The observed conduction shows nonlinear, asymmetric current-voltage characteristics, thermal activation at high temperatures and high stability. We relate this behavior to the microscopic structure of the domain walls, allowing local defects segr…
The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are analyzed using the Landau-Ginsburg Devonshire (LGD) theory for polarization combined with Poisson equation for charge distributions. Both the classical ferroelectric parameters including expansion coefficients in 2-4-6 Landau potential and gradient terms, as well as flexoelectric coupling, inhomogeneous elastic strains and electrostriction are included in the pr…
We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the ferroelectric domains can be explained by the surface band bending, the drastic enhancement of domain wall (DW) ac conductivity is clearly dominated by the dielectric loss due to DW vibration rather than mobile-carrier conduction. Our work provides a unified physical picture to describe the local conductivity of ferroelectric domains and domain walls, which …
Polar metals are rare because free carriers in metals screen electrostatic potential and eliminate internal dipoles. Degenerate doped ferroelectrics may create an approximate polar metallic phase. We use first-principles calculations to investigate $n$-doped LiNbO$_3$-type oxides (LiNbO$_3$ as the prototype) and compare to widely studied perovskite oxides (BaTiO$_3$ as the prototype). In the rigid-band approximation, substantial polar displacements in $n$-doped LiNbO$_3$ persist even at 0.3 $e$/f.u. ($\simeq$ 10$^{21}$ cm$^{-3}$), while polar displacements in $n$-doped BaTiO$_3$ quickly get su…
Recent experiments have demonstrated that light can induce a transition from the quantum paraelectric to the ferroelectric phase of SrTiO$_3$. Here, we investigate this terahertz field-induced ferroelectric phase transition by solving the time-dependent lattice Schrödinger equation based on first-principles calculations. We find that ferroelectricity originates from a light-induced mixing between ground and first excited lattice states in the quantum paraelectric phase. In agreement with the experimental findings, our study shows that the non-oscillatory second harmonic generation signal can b…
Breakdown and polarization contrasts in ferroelectric devices observed by operando laser-based photoemission electron microscopy with the AC/DC electrical characterization system
Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was the development of a fundamental framework that explains the emergence of enhanced electronic direct-current (DC) conduction at the domain walls. In this Review, we discuss the much less explored behavior of ferroelectric domain walls under applied alternating-current (AC) voltages. We provide an overview of the recent advances in the nanoscale characteriza…
Two-dimensional electron gas due to semiconductor interfaces can have high mobility and exhibits superconductivity, magnetism, and other exotic properties that are unexpected in constituent bulk materials. We study crystal structures, electronic states, and magnetism of short-period (BTO)$_m$/(GTO)$_2$ ($m$=2 and 4) superlattices consisting of ferroelectric BaTiO$_3$ (BTO) and ferrimagnetic insulating polar GdTiO$_3$ (GTO) by first principles calculations. Our investigation shows that the middle Ti-O monolayer in the GTO layer becomes metallic because the ferroelectricity in the insulating BTO…
The spin-induced ferroelectricity in quasi-1D spin chain system is little known, which could be fundamentally different from those in three-dimensional (3D) system. Here, we report the ferroelectricity driven by a tilted screw spin order and its exotic dynamic in the spin-chain compound Ba9Fe3Se15. It is found that the spin-induced polarization has already occurred and exhibits magnetoelectric coupling behavior far above the long-range spin order (LRSO) at TN = 14 K. The polarized entities grow and their dynamic responses slow down gradually with decreasing temperature and permeate the whole l…
We report that the lowest energy transverse-optic phonon in metallic SnTe softens to near zero energy at the structural transition at $T_C=75 \text{~K}$ and importantly show that the energy of this mode below $T_C$ increases as the temperature decreases. Since the mode is a polar displacement this proves unambiguously that SnTe undergoes a ferroelectric displacement below $T_C$. Concentration gradients and imperfect stoichiometry in large crystals may explain why this was not seen in previous inelastic neutron scattering studies. Despite SnTe being metallic we find that the ferroelectric trans…
Ferroelectric vortices formed through complex lattice-charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO3-SrTiO3 superlattice via atomically resolved in situ scanning transmission electron microscopy. The vortices undergo a transition to the a-domain with in-plane polarization under external compressive stress and spontaneously recover after removal of the stress.…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's equation and the transport equation for electrons assuming a Drift-Diffusion transport mechanism. Special emphasis is put on the screening of the spontaneous polarization by conduction electrons as a function of the applied voltage. Depending on the orientation of the polarization in the ferroelectric layer, a high and a low resistive state are found giving ris…
Low dimensional ferroelectrics are highly desired for applications and full of exotic physics. Here a functionalized MXene Hf$_2$CF$_2$ monolayer is theoretically studied, which manifests a nonpolar to polar transition upon moderate biaxial compressive strain. Accompanying this structural transition, a metal-semiconductor transition occurs. The in-plane shift of unilateral fluorine layer leads to a polarization pointing out-of-plane. Such ferroelectricity is unconventional, similar to the recently-proposed interlayer-sliding ferroelectricity but not identical. Due to its specific hexapetalous …
Materials with reduced dimensions have been shown to host a wide variety of exotic properties and novel quantum states that often defy textbook wisdom1-5. Ferroelectric polarization and metallicity are well-known examples of mutually exclusive properties that cannot coexist in bulk solids because the net electric field in a metal can be fully screened by free electrons6. An atomically thin metallic layer capped by insulating layers has shown decent conductivity at room temperature7. Moreover, a penetrating polarization field can be employed to induce an ion displacement and create an intrinsic…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics is emerging consequently. Here we demonstrate the highly stable and fatigue-resistant nonvolatile ferroelectric memory device based on deterministic creation and erasure of conductive domain wall geometrically confined inside a topological domain structure. By introducing a pair of delicately designed co-axial electrodes onto the epitaxial BiFeO3 film, one ca…
Metals cannot exhibit ferroelectricity because static internal electric fields are screened by conduction electrons, but in 1965, Anderson and Blount predicted the possibility of a ferroelectric metal, in which a ferroelectric-like structural transition occurs in the metallic state. Up to now, no clear example of such a material has been identified. Here we report on a centrosymmetric (R-3c) to non-centrosymmetric (R3c) transition in metallic LiOsO3 that is structurally equivalent to the ferroelectric transition of LiNbO3. The transition involves a continuous shift in the mean position of Li+ …
Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile conduction states in partially overlapping alpha-In2Se3-MoS2 based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of alpha-In2Se3 allows to non-volatilely switch between n-i and n-i-n type junction configurations based on a nov…
An impedance spectroscopy (IS) is a versatile tool to study the effect of grains (bulk), grain boundaries and electrode-electrolyte interface on dielectric and electrical properties of electro-ceramics. This study only focuses the high frequency (1 kHz to 10 MHz) probe of bulk ferroelectric capacitance near ferroelectric phase transition temperature (FPTT). The PZTFW single phase and PZTFW-CFO composites, respectively, have been investigated to understand the microstructure-property relation. Keeping in mind the complex microstructure of both systems, low frequency ( less than 1 kHZ ) impedanc…
Two-dimensional (2D) semiconductors integrated with two or more functions are the cornerstone for constructing multifunctional nanodevices, but remain largely limited. Here, by tuning the spin state of organic linkers and the symmetry/topology of crystal lattice, we predict a class of unprecedented multifunctional semiconductors in 2D Cr(II) five-membered heterocyclic metal organic frameworks that simultaneously possess auxetic effect, room temperature ferrimagnetism, chiral ferroe-lectricity, electrically reversible spin polarization and topological nodal lines/points. Taking 2D Cr(TDZ)$_2$ (…
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Georgia Institute of Technology（佐治亚理工学院）；University of Notre Dame（圣母大学）；Missouri University of Science and Technology（密苏里科技大学）；Samsung Electronics Co., Ltd.（三星电子株式会社）
Here we present the theory of the conductivity of pn junction (pnJ) in graphene channel, placed on ferroelectric substrate, caused by ferroelectric domain wall (FDW) for the case of arbitrary current regime: from ballistic to diffusive one. We calculated the ratio of the pnJ conductions for opposite polarities of voltages, applied to source and drain electrodes of the channel,G+/G- as the function of the graphene channel length L, electron mean free path λ and ferroelectric substrate permittivity. We have demonstrated, that the small values of G+/G-(0.1 and smaller), which correspond to effici…
We report the tuning from spin one channel (1CK) to orbital two-channel Kondo (2CK) effect by varying CoFe2O4 (CFO) content in the composites with LaNiO3 (LNO) along with the presence of ferrimagnetism. Although there is no signature of resistivity upturn in case of pure LNO, all the composites exhibit a distinct upturn in the temperature range 30-80 K. For composite with lower percentage of CFO (10 %), the electron spin plays the key role in the emergence of resistivity upturn which is affected by external magnetic field. On the other hand, when the CFO content is increased (15%), the upturn …
Long-range ferroelectric crystalline order usually fades away as the spatial dimension decreases, hence there are few two-dimensional (2D) ferroelectrics and far fewer one-dimensional (1D) ferroelectrics. Due to the depolarization field, low-dimensional ferroelectrics rarely possess the polarization along the direction of reduced dimensionality. Here, using first-principles density functional theory, we explore the structural evolution of nanoribbons of varying widths constructed by cutting the 2D sheet of ferroelectric $α$-III$_2$IV$_3$ (III=Al, Ga, In; VI=S, Se, Te). We discover a one-dimens…
Phase-field insight into the nature of topological polarization structures in uniaxial ferroelectrics
Institute of Materials Science, Technical University of Darmstadt（达姆施塔特工业大学材料科学研究所）；Institute of Physics, Czech Academy of Sciences（捷克科学院物理研究所）；Faculty of Mechatronics, Informatics and Interdisciplinary Studies, Technical University of Liberec（利贝雷茨工业大学机械、信息学及跨学科研究学院）
It has been generally accepted that the spin-orbit coupling effect in noncentrosymmetric materials leads to the band splitting and non-trivial spin polarization in the momentum space. However, in some cases, zero net spin polarization in the split bands may occurs, dubbed as the band splitting with vanishing spin polarization (BSVSP) effect, protected by non-pseudo-polar point group symmetry of the wave vector in the first Brillouin zone [Liu et. al., Nat. Commun. \textbf{10}, 5144 (2019)]. In this paper, by using first-principles calculations, we show that the BSVSP effect emerges in two-dime…
Breaking the mutual exclusivity between metallicity and ferroelectricity in a non-polar covalent semiconductor via orbital selective doping
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所凝聚态物理国家实验室）；Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University（燕山大学亚稳材料科学与技术与国家重点实验室高压科学中心）；Beijing Lattice Semiconductor Co., Ltd.（北京晶格半导体有限公司）；Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University（北京大学化学与分子工程学院纳米化学中心北京纳米碳科学与工程中心分子科学国家实验室）；Center for High Pressure Science and Technology Advanced Research（先进高压力科学与技术研究中心）；Institute of Electrical Engineering, Chinese Academy of Sciences（中国科学院电气技术研究所）；PowerEpi Semiconductor Co., Ltd.（动力外延半导体有限公司）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）
To date, high-resolution electron microscopy has largely relied on using the phase of the exit wave function at the exit surface to form a high-resolution electron microscopic image. We have for the first time used chromatic aberration correction to implement a new imaging mode to achieve amplitude contrast imaging in high-resolution electron microscopy, allowing us to obtain directly interpretable high-resolution electron microscopic images with discrimination between light and heavy atomic columns. Using this imaging approach, we have successfully visualized the atomic structure in a BaTiO3/…
Magnetic skyrmions are mesmerizing spin textures with peculiar topological and dynamical properties, typically the product of competing interactions in ferromagnets, and with great technological potential [1-5]. Researchers have long wondered whether analogous electric skyrmions might exist in ferroelectrics, maybe featuring novel behaviors and possibilities for electric and mechanical control. The results thus far are modest, though: an electric equivalent of the most typical magnetic skyrmion (which would rely on a counterpart of the Dzyaloshinskii-Moriya interaction) seems all but impossibl…
Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to t…
Room-Temperature Noncolinear Ferroelectricity in van der Waals WO$_2$Cl$_2$ with a Wide Bandgap
Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University（东南大学物理学院量子材料与器件教育部重点实验室）；School of Advanced Materials and Nanotechnology, Xidian University（西安电子科技大学先进材料与纳米技术学院）；Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University（江苏师范大学物理与电子工程学院江苏省先进激光材料与器件重点实验室）；Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University（安徽大学物质科学与信息技术研究院安徽省信息材料与智能感知实验室）；College of Science, Hebei University of Science and Technology（河北科技大学理学院）；Quantum Innovation Centre (Q. InC), Agency for Science, Technology and Research (A*STAR)（新加坡科技研究局量子创新中心）；Chaotic Matter Science Research Center, Department of Materials, Metallurgy and Chemistry & Jiangxi Provincial Key Laboratory of Functional Molecular Materials Chemistry, Jiangxi University of Science and Technology（江西理工大学材料冶金化学系混沌物质科学研究中心江西省功能分子材料化学重点实验室）
Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we her…
In the series R2PdSi3, Nd2PdSi3 is an anomalous compound in the sense that it exhibits ferromagnetic order unlike other members in this family. The magnetic ordering temperature is also unusually high compared to the expected value for a Nd-based system, assuming 4f localization. Here, we have studied the electronic structure of single crystalline Nd2PdSi3 employing high resolution photoemission spectroscopy and ab initio band structure calculations. Theoretical results obtained for the effective electron correlation strength of 6 eV corroborate well with the experimental valence band spectra.…
Magnetic topological materials are a class of compounds with the underlying interplay of nontrivial band topology and magnetic spin configuration. Extensive interests have been aroused due to their application potential involved with an array of exotic quantum states. With angle-resolved photoemission spectroscopy and first-principles calculations, here we study the electronic properties of two magnetic Weyl semimetal candidates PrAlSi and SmAlSi. Though the two compounds harbor distinct magnetic ground states (ferromagnetic and antiferromagnetic for PrAlSi and SmAlSi, respectively) and 4$f$ s…
