大读出电流拓扑保护铁电畴壁存储器
Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current
摘要：
原子尺寸的导电铁电畴缺陷（如几何限制壁）的发现和精确操纵为各种有前景的电子器件提供了新的机会，所谓的壁电子学也随之出现。在这里，我们展示了高度稳定和抗疲劳的非易失性铁电存储器设备的基础上确定性的创建和擦除的导电畴壁的几何限制内的拓扑域结构。通过在BiFeO_3外延膜上引入一对精心设计的同轴电极，可以很容易地形成四分之一中心拓扑极性畴结构。更重要的是，可以实现这种中心拓扑畴结构在具有高导电限制壁的会聚状态和具有绝缘限制壁的发散状态之间的可逆切换，因此导致具有> 104的大开/关比的表观电阻变化和技术上优选的读出电流（高达40 nA）。由于中心畴结构的拓扑鲁棒性，该器件在106个循环中表现出优异的恢复重复性和超过12天的长保留（> 106 s）。这项工作展示了一个很好的例子，实现异国情调的极性拓扑结构在高性能的纳米器件，并会激发更多的兴趣，探索这些异国情调的拓扑状态的丰富新兴应用。
英文摘要：
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics is emerging consequently. Here we demonstrate the highly stable and fatigue-resistant nonvolatile ferroelectric memory device based on deterministic creation and erasure of conductive domain wall geometrically confined inside a topological domain structure. By introducing a pair of delicately designed co-axial electrodes onto the epitaxial BiFeO3 film, one can easily create quadrant center topological polar domain structure. More importantly, a reversible switching of such center topological domain structure between the convergent state with highly conductive confined wall and the divergent state with insulating confined wall can be realized, hence resulting in an apparent resistance change with a large On/Off ratio > 104 and a technically preferred readout current (up to 40 nA). Owing to the topological robustness of the center domain structure, the device exhibits the excellent restoration repeatability over 106 cycles and a long retention over 12 days (> 106 s). This work demonstrates a good example for implementing the exotic polar topologies in high-performance nanoscale devices, and would spur more interest in exploring the rich emerging applications of these exotic topological states.
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