We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder Interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65+/-0.08) x 10-4 K-1. Furthermore, we realize an SRN Multi-Mode Interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $χ^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are fabricated by reactive DC sputtering of c-axis oriented AlN on top of pre-patterned SiN. This new approach does not require any patterning of AlN and depends only on reliable SiN nanofabrication. This simplifies the nanofabrication process drastically. Optical characteristics, such as the quality factor, propagation losses and group index, are obtained. Our hyb…
Noble-metal-free surface-enhanced Raman scattering (SERS) substrates have attracted great attention for their abundant sources, good signal uniformity, superior biocompatibility, and high chemical stability. However, the lack of controllable synthesis and fabrication of noble-metal-free substrates with high SERS activity impedes their practical applications. Herein,we propose a general strategy to fabricate a series of planar transition-metal nitride (TMN) SERS chips via an ambient temperature sputtering deposition route.These planar TMN (tungsten nitride, tantalum nitride, and molybdenum nitr…
We present the design, fabrication and characterization of high quality factor silicon nitride nanobeam PhC cavities at visible wavelengths for coupling to diamond color centers in a cavity QED system. We demonstrate devices with a quality factor of about 24;000 around the zero-phonon line of the germanium-vacancy center in diamond. We also present an efficient fiber-to-waveguide coupling platform for suspended nanophotonics. By gently changing the corresponding effective indices at the fiber-waveguide interface, we achieve an efficiency of about 96% at the cavity resonance.
Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency fiber-to-chip interface is key to the use of these integrated photonic circuits for quantum information tasks, as photon loss is a major source that weakens quantum protocols. Here, overcoming material and fabrication limitation of thin-film aluminum nitride by adopting a stepwise waveguiding scheme, we demonstrate low-loss adiabatic fiber-optic couplers in aluminum…
We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter right at the edge of the silicon nitride chip that relaxes the required alignment to the III-V gain chip and equally splits the power among its two output waveguides. Both the ground and first order mode are excited in the coupler and reach the quadrature condition at the waveguide junction, ensuring equal power to be coupled to both. Two high-quali…
We experimentally demonstrate wide-band (>100 THz) frequency down-conversion of near-infrared (NIR) femtosecond-scale pulses from an Er:fiber laser to the mid-infrared (MIR) using four-wave-mixing (FWM) in photonic-chip silicon-nitride waveguides. The engineered dispersion in the nanophotonic geometry, along with the wide transparency range of silicon nitride, enables large-detuning FWM phase-matching and results in tunable MIR from 2.6-3.6 um on a single chip with 100-pJ-scale pump-pulse energies. Additionally, we observe > 20 dB broadband parametric gain for the NIR pulses when the FWM proce…
Frequency microcombs, successors to mode-locked laser and fiber combs, enable miniature rulers of light for applications including precision metrology, molecular fingerprinting, and exoplanet discoveries. To enable the frequency ruling function, microcombs must be stabilized by locking their carrier-envelop offset frequency. So far, the microcomb stabilization remains compounded by the elaborate optics external to the chip, thus evading its scaling benefit. To address this challenge, here we demonstrate a nanophotonic chip solution based on aluminum nitride thin films, which simultaneously off…
Here, we propose titanium nitride (TiN) as an alternative plasmonic material for an on-chip silicon plasmonic Schottky photodetector that is based on an internal photoemission process and operating at telecom wavelengths. The examined structure employs an asymmetric metal-semiconductor-metal waveguide structure with one of the electrodes being gold and the second either gold, titanium or titanium nitride. Apart from the excellent optical properties desired for this type of photodetector such as high absorption losses and reasonably high real part of the permittivity, titanium nitride is a CMOS…
The design, fabrication, and characterization of low loss ultra-compact bends in high index (n = 3.1 at λ = 1550 nm) PECVD silicon rich silicon nitride (SRN) is demonstrated and utilized to realize efficient, small footprint thermo-optic phase shifter. Compact bends are structured into a folded waveguide geometry to form a rectangular spiral within an area of 65 x 65 \mum2 possessing a total active waveguide length of 1.2 mm. The device features a phase shifting efficiency of 8 mW/π and a 3 dB switching bandwidth of 15 KHz. We propose SRN as a promising thermo-optic platform combining the prop…
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report the first silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon. Owing to a leaky-wave silicon nitride-on-silicon design, the devices achieved a high external quantum efficiency of > 60% across a record wavelength span from $λ…
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is…
We demonstrate experimentally the realization and the characterization of a chip scale integrated photodetector for the visible and the near infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon nitride waveguide. This configuration achieves high responsivity of ~1 A/W at the wavelength of 780 nm (indicating an internal gain mechanism), while suppressing the dark current to the level of ~50 pA, much lower as compared to a reference sample of just MoSe2 without WS2. We have measured the power spectral density of the dark current to be as low as ~1x1…
Small scale renewable energy harvesting is an attractive solution to the growing need for power in remote technological applications. For this purpose, localized thermal gradients on-chip--created via radiative cooling--could be exploited to create microscale renewable heat engines running on environmental heat. This could allow self-powering in small scale portable applications, thus reducing the need for non-renewable sources of electricity and hazardous batteries. In this work, we demonstrate the creation of a local thermal gradient on-chip by radiative cooling of a 90 nm thick freestanding…
We demonstrate power-efficient, thermo-optic, silicon nitride waveguide phase shifters for blue, green, and yellow wavelengths. The phase shifters operated with low power consumption due to a suspended structure and multi-pass waveguide design. The devices were fabricated on 200-mm silicon wafers using deep ultraviolet lithography as part of an active visible-light integrated photonics platform. The measured power consumption to achieve a $π$ phase shift (averaged over multiple devices) was 0.78, 0.93, 1.09, and 1.20 mW at wavelengths of 445, 488, 532, and 561 nm, respectively. The phase shift…
The design, fabrication, and characterization of a 16-element optical phased array (OPA) using a high index (n = 3.1) silicon rich silicon nitride (SRN) is demonstrated. We present one-dimensional beam steering with end-fire facet antennas over a wide steering range of >115° at a fixed wavelength of 1525 nm. A spot size of 0.11° has been measured at boresight, consistent with theory. We demonstrate SRN as a viable material choice for chip-scale OPA applications due to its high thermo-optic coefficient, high optical power handling capacity due to negligible two-photon absorption (TPA), wide tra…
Portable and cost-effective gas sensors are gaining demand for a number of environmental, biomedical and industrial applications, yet current devices are confined into specialized labs and cannot be extended to general use. Here, we demonstrate a part-per-billion-sensitive refractive index gas sensor on a photonic chip based on silicon nitride waveguides functionalized with a mesoporous silica top-cladding layer. Low-concentration chemical vapors are detected by monitoring the output spectral pattern of an integrated Mach-Zehnder interferometer having one coated arm exposed to the gas vapors. …
Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the use of single-crystalline NbN thin films for superconducting nanowire single-photon detectors (SNSPDs). Grown by molecular beam epitaxy (MBE) at high temperature on nearly lattice-matched AlN-on-sapphire substrates, the NbN films exhibit high degree of uniformity and homogeneity. Even with relatively thick films, the fabricated nanowire detectors show saturated internal efficiency at near-IR wavelengths, demonstrating the potential of MBE-grown NbN for realiz…
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated qua…
We observe the actuation of silicon nitride (SiN) nanomechanical resonators by electrical excitation of metal-dielectric-semiconductor (MDS) capacitors on their supporting silicon substrate. We develop first-principle models explaining this actuation mechanism by acoustic waves resulting from voltage-dependent electrostatic forces in the MDS capacitors. Models are developed for actuation in the charge accumulation (Ni-pSi) and charge depletion (Al-pSi) regimes. Experimental observations confirm our prediction that charge accumulation (Ni-pSi) is more efficient at actuation than charge depletio…
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $μm$ long device. High responsivity is achieved by integrating the detector in a silicon nitride ring resonator. The resonance offers 100X responsivity improvement over a single-pass photodetector due to cavity enhancement. We also present a detailed study of the high-speed response of the cavity and single-pass detector. We report an electro-optic bandwidth of 7.5 GHz measured …
Microresonator frequency combs, or microcombs, have gained wide appeal for their rich nonlinear physics and wide range of applications. Stoichiometric silicon nitride films grown via low-pressure chemical vapor deposition (LPCVD), in particular, are widely used in chip-integrated Kerr microcombs. Critical to such devices is the ability to control the microresonator dispersion, which has contributions from both material refractive index dispersion and geometric confinement. Here, we show that modifications to the LPCVD growth conditions, specifically the ratio of the gaseous precursors, has a s…
We investigate thin film resistive thermometry based on metal-to-insulator-transition (niobium nitride) materials down to very low temperature. The variation of the NbN thermometer resistance have been calibrated versus temperature and magnetic field. High sensitivity in tempertaure variation detection is demonstrated through efficient temperature coefficient of resistance. The nitrogen content of the niobium nitride thin films can be tuned to adjust the optimal working temperature range. In the present experiment, we show the versatility of the NbN thin film technology through applications in…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride (GaN) based laser diode and a silicon nitride photonic chip-based microresonator operating at record low…
Development of scalable quantum photonic technologies requires on-chip integration of components such as photonic crystal cavities and waveguides with nonclassical light sources. Recently, hexagonal boron nitride (hBN) has emerged as a promising platform for nanophotonics, following reports of hyperbolic phonon-polaritons and optically stable, ultra-bright quantum emitters. However, exploitation of hBN in scalable, on-chip nanophotonic circuits, quantum information processing and cavity quantum electrodynamics (QED) experiments requires robust techniques for the fabrication of monolithic optic…
Near-field thermophotovoltaic systems functioning at 400$\sim$900~K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb $p$-$n$ junctions are investigated theoretically. The performances of two near-field systems with different emitters are examined carefully. One near-field system consists of a graphene-hexagonal-boron-nitride-graphene sandwich structure as the emitter, while the other system has an emitter made of the double graphene-hexagonal-boron-nitride heterostructure. It is shown that both systems exhibit higher output power density and energy efficiency than …
We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances. The associated energy trapping, due to mass loading from the gold electrodes, allows us to efficiently excite these resonances from a 50 $Ω$ input. The higher phase velocity, combined with lower electrode damping, enables high quality factors with moderate electrode pitch, and provides a viable route towards high-frequency piezoelectric devices. The GaN pla…
The low thermal conductivity of silicon nanostructures, with respect to bulk silicon, opens excellent possibilities for thermoelectric applications because it will enable the use of silicon for the high efficient direct conversion of wasted heat into electrical power. This paves the way for the application of silicon devices for energy scavenging and green energy harvesting. We present a device with a large number of nanostructures suspended on a silicon substrate. Top-down techniques for device fabrication based on advanced lithography and anisotropic etching will be discussed. FEM simulation…
Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration. Here, we present a SiN drum resonator covered with an aluminum thin film, enabling large capacitive coupling to a suspended top-gate. Implementing the full electrical measurement scheme, we demonstrate a high quality factor ~ 1E4 (comparable to that of bare drums at room temperature) and present ou…
