Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers
V. Kravtsov, A. D. Liubomirov, R. V. Cherbunin, A. Catanzaro, A. Genco, D. Gillard, E. M. Alexeev, T. Ivanova, E. Khestanova, I. A. Shelykh, I. V. Iorsh, A. I. … 展开作者
V. Kravtsov, A. D. Liubomirov, R. V. Cherbunin, A. Catanzaro, A. Genco, D. Gillard, E. M. Alexeev, T. Ivanova, E. Khestanova, I. A. Shelykh, I. V. Iorsh, A. I. Tartakovskii, M. S. Skolnick, D. N. Krizhanovskii
Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with different band structures engineered via the use of alloyed monolayer semiconductors. Through a combination of time-resolved Kerr rotation spectroscopic measurements and theoretical modelling for Mo$_{1-x}$W$_{x}$Se$_2$/WSe$_2$ samples with different chemical compositions and stacking angles, we uncover the roles of interlayer exciton recombination and charge carrier spin depolarization in the overall valley dynamics. Our results provide insights into the microscopic spin--valley polarization mechanisms in van der Waals heterostructures for the development of future 2D valleytronic devices.
The valley-polarized quantum anomalous Hall (VQAH) state, which forwards a strategy for combining valleytronics and spintronics with nontrivial topology, attracts intensive interest in condensed-matter physics. So far, the explored VQAH states have still been limited to magnetic systems. Here, using the low-energy effective model and Floquet theorem, we propose a different mechanism to realize the Floquet VQAH state in nonmagnetic heterobilayers under light irradiation. We then realize this proposal via first-principles calculations in transition metal dichalcogenide heterobilayers, which init…
We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe$_2$/WSe$_2$ twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in few $μ$s$^{-1}$ radiative rates. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite …
Proximity effects are one of the pillars of exotic phenomena and technological applications of two dimensional materials. However, the interactions nature depends strongly on the materials involved, their crystalline symmetries, and interfacial properties. Here we used large-scale first-principle calculations to demonstrate that strain and twist-angle are efficient knobs to tailor the spin-orbit coupling in graphene transition metal dichalcogenide heterobilayers. We found that by choosing a twist-angle of 30 degrees, the spin relaxation times increase by two orders of magnitude, opening a path…
The emergence of various exciton-related effects in transition metal dichalcogenides (TMDC) and their heterostructures has inspired a significant number of studies and brought forth several possible applications. Often, standard photoluminescence (PL) with microscale lateral resolution is utilized to identify and characterize these excitonic phenomena, including interlayer excitons (IEXs). We studied the local PL signatures of van der Waals heterobilayers composed of exfoliated monolayers of the (Mo,W)(S,Se)$_2$ TMDC family with high spatial resolution (down to 30 nm) using tip-enhanced photol…
We present a theory of optical absorption by interlayer excitons in a heterobilayer formed from transition metal dichalcogenides. The theory accounts for the presence of small relative rotations that produce a momentum shift between electron and hole bands located in different layers, and a moiré pattern in real space. Because of the momentum shift, the optically active interlayer excitons are located at the moiré Brillouin zone's corners, instead of at its center, and would have elliptical optical selection rules if the individual layers were translationally invariant. We show that the excito…
Transition-metal dichalcogenide heterostructures exhibit moiré patterns that spatially modulate the electronic structure across the material's plane. For certain material pairs, this modulation acts as a potential landscape with deep, trigonally symmetric wells capable of localizing interlayer excitons, forming periodic arrays of quantum emitters. Here, we study these moiré localized exciton states and their optical properties. By numerically solving the two-body problem for an interacting electron-hole pair confined by a trigonal potential, we compute the localized exciton spectra for differe…
The valence flat bands in transition metal dichalcogenide (TMD) heterobilayers are shown to exhibit strong intralayer spin-orbit coupling. This is reflected in a simple tight-binding model with spin-dependent complex hoppings based on the continuum model. A perpendicular electric field causes interlayer hybridization, such that the effective model is equivalent to the Kane-Mele model of topological insulators. The proposed model can be used as a starting point to understand interactions and the experimentally observed topological phases.
Geometrical moiré patterns, generic for almost aligned bilayers of two-dimensional (2D) crystals with similar lattice structure but slightly different lattice constants, lead to zone folding and miniband formation for electronic states. Here, we show that moiré superlattice (mSL) effects in $\mathrm{MoSe}_2/\mathrm{WS}_2$ and $\mathrm{MoTe}_2/\mathrm{MoSe}_2$ heterobilayers that feature alignment of the band edges are enhanced by resonant interlayer hybridization, and anticipate similar features in twisted homobilayers of TMDs, including examples of narrow minibands close to the actual band ed…
The creation of moiré patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moiré pattern with a superlattice potential can form by vertically stacking two layered materials with a twist and/or finite lattice constant difference. This unique approach has led to emergent electronic phenomena, including the fractal quantum Hall effect, tunable Mott insulators, and unconventional superconductivity. Furthermore, theory predicts intriguing effects on optical excitations…
We show that, because of the inevitable twist and lattice mismatch in heterobilayers of transition metal dichalcogenides, interlayer excitons have six-fold degenerate light cones anomalously located at finite velocities on the parabolic energy dispersion. The photon emissions at each light cone are elliptically polarized, with major axis locked to the direction of exciton velocity, and helicity specified by the valley indices of the electron and the hole. These finite-velocity light cones allow unprecedented possibilities to optically inject valley polarization and valley current, and the obse…
Recently, the topological flat bands and spin Hall effect have been experimentally observed in the AB-stacked MoTe$_2$/WSe$_2$ heterostructures. In this work, we systematically study the Berry curvature effects in moiré transition metal dichalcogenide (TMD) heterobilayers. We point out that the moiré potential of the remote conduction bands would induce a sizable periodic pseudo-magnetic field (PMF) on the valence band. This periodic PMF creates net Berry curvature flux in each valley of the moiré Brillouin zone. The combination of the effect of the Berry curvature and the spin-valley locking …
Unveiling the Spin-Valley Structure of Dipolar Exciton Ladders in R-stacked WSe$_2$/WS$_2$ Moiré Heterobilayers
Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University（赫瑞-瓦特大学光子与量子科学研究所）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（物质材料纳米结构研究中心）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（电子与光学材料研究中心）
研究 R 堆叠 WSe₂/WS₂ 莫尔异质双层中偶极激子阶梯的自旋-谷结构，用螺旋度分辨磁光致发光确定其微观起源，明确不同电荷填充时各激子态情况，建立超越简单占据数物理的自旋-谷分辨图像。
Moiré heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moiré bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling $ν=2$ (two holes per moiré unit cell) and a valley-polarized quantum anomalous Hall state at filling $ν=1$ were observed in AB stacked moiré MoTe$_2$/WSe$_2$ heterobilayers. However, how the topologically nontrivial s…
Valley selective hybridization and residual coupling of electronic states in commensurate van der Waals heterobilayers enable the control of the orbital character of interlayer excitons. We demonstrate electric field control of layer index, orbital character, lifetime and emission energy of indirect excitons in MoS2/WS2 heterobilayers embedded in an vdW field effect structure. Different excitonic dipoles normal to the layers are found to stem from bound electrons and holes located in different valleys of MoS2/WS2 with a valley selective degree of hybridization. For the energetically lowest emi…
We reveal by first-principles calculations that the interlayer binding in a twisted MoS2/MoTe2 heterobilayer decreases with increasing twist angle, due to the increase of the interlayer overlapping degree, a geometric quantity describing well the interlayer steric effect. The binding energy is found to be a Gaussian-like function of twist angle. The resistance to rotation, an analogue to the interlayer sliding barrier, can also be defined accordingly. In sharp contrast to the case of MoS2 homobilayer, here the energy band gap reduces with increasing twist angle. We find a remarkable interlayer…
Photo-induced charge separation in transition metal dichalcogenide heterobilayers is being explored for moiré excitons, spin-valley polarization, and quantum phases of excitons/electrons. While different momentum spaces may be critically involved in charge separation dynamics, little is known directly from experiments. Here we determine momentum-resolved electron dynamics in the WS2/MoS2 heterobilayer using time and angle resolved photoemission spectroscopy (TR-ARPES). Upon photoexcitation in the K valleys, we detect electrons in M/2, M, and Q valleys/points on time scales as short as ~70 fs, …
We study the dynamical properties of point-like defects, represented by monoatomic chalcogen vacancies, in WS$_2$-graphene and MoS$_2$-graphene heterobilayers. Employing a multidisciplinary approach based on the combination of ab initio, model Hamiltonian and density matrix techniques, we propose a minimal interacting model that allows for the calculation of electronic transition times associated to population and depopulation of the vacancy by an additional electron. We obtain the "coarse-grained" semiclassical dynamics by means of a master equation approach and discuss the potential role of …
We use first-principles calculations to investigate the band structure evolution of W$X_2$/Mo$X_2$ ($X$ = S, Se) heterobilayers under a perpendicular electric field. We characterize the extent to which the type-II band alignment in these compounds can be tuned or inverted electrostatically. Our results demonstrate two effects of stacking configuration. First, different stackings produce different net dipole moments, resulting in band offset variations that are larger than 0.1 eV. Second, based on symmetry constraints that depend on stacking, a perpendicular electric field may hybridize W$X_2$ …
The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topologi…
A major theoretical challenge of studying twisted transition metal dichalcogenide (TMD) bilayers is that the unit cell of such structures is very large and therefore difficult to address using first-principles methods. However, twisted TMD bilayers form moiré patterns, which consist of regions of commensurate stacking, either smoothly interpolated into one another or separated by sharp domain walls. In this paper, we study twisted TMD bilayers by studying the properties of the constituent commensurate structures. Using density functional theory (DFT), we compute band structures for commensurat…
Quantum spin Hall (QSH) insulator with large gap is highly desirable for potential spintronics application. Here we realize electrically tunable QSH insulator with large gap in van der Waals heterobilayer of monolayer transition metal dichalcogenide (TMD) and hexagonal BAs. When the type II band alignment gets inverted in an electric field, the hybridization by interlayer hopping between the spin-valley locked valence band edges in TMD and the BAs conduction band edges leads to a stacking-configuration dependent topological band inversion. In the non-interacting limit, the double spin degenera…
We propose a practical scheme to generate a pure valley current in monolayer transition metal dichalcogenides by one-photon absorption of linearly polarized light. We show that the pure valley current can be detected by either photoluminescence measurements or the ultrafast pump-probe technique. Our method, together with the previously demonstrated generation of valley polarization, opens up the exciting possibility of ultrafast optical-only manipulation of the valley index. The tilted field effect on the valley current in experiment is also discussed.
We study valley-dependent spin transport theoretically in monolayer transition-metal dichalcogenides in which a variety of spin and valley physics are expected because of spin-valley coupling. The results show that the spins are valley-selectively excited with appropriate carrier doping and valley polarized spin current (VPSC) is generated. The VPSC leads to the spin-current Hall effect, transverse spin accumulation originating from the Berry curvature in momentum space. The results indicate that spin excitations with spin-valley coupling lead to both valley and spin transport, which is promis…
Layered two-dimensional materials exhibit rich transport and optical phenomena in twisted or lattice-incommensurate heterostructures with spatial variations of interlayer hybridization arising from moiré interference effects. Here, we report experimental and theoretical studies of excitons in twisted heterobilayers and heterotrilayers of transition metal dichalcogenides. Using MoSe$_2$-WSe$_2$ stacks as representative realizations of twisted van der Waals bilayer and trilayer heterostructures, we observe contrasting optical signatures and interpret them in the theoretical framework of interlay…
We calculate the dispersion of spinor exciton-polaritons in a planar microcavity with its active region containing a single Transitional Metal Dichalcogenide (TMD) monolayer, taking into account excitonic and photonic spin-orbit coupling. We consider the radial propagation of polaritons in presence of disorder. We show that the reduction of the disorder scattering induced by the formation of polariton states allows to observe an optical Valley Hall effect, namely the coherent precession of the locked valley and polarization pseudospins leading to the formation of spatial valley-polarized domai…
Signatures of electric field and layer separation effects on the spin-valley physics of MoSe$_2$/WSe$_2$ heterobilayers: from energy bands to dipolar excitons
We show that excitons and free carriers in K and K' valleys of transition metal dichalcogenide monolayers can be entangled with respect to their valley degree of freedom by absorbing linearly polarized single photons. This effect does not require any interaction between K and K' excitons in contrast to conventional mechanisms of entanglement that are mediated by coupling between quantum systems (e.g.~entanglement of photons in nonlinear optical interactions). The valley entanglement of excitons and free carriers can be verified by measuring the polarization of their photoluminescence or fluctu…
The direct gap interband transitions in transition metal dichalcogenides monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the $K^+$ or $K^-$ valley in momentum space are induced. Linearly polarized laser excitation prepares a coherent superposition of valley states. Here we demonstrate the control of the exciton valley coherence in monolayer WSe2 by tuning the applied magnetic field perpendicular to the monolayer plane. We show rotation of this coherent superposition of valley states by angles as large as 30 degrees in appli…
Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on pump-probe experiments performed for MoSe2 and WSe2 monolayers and corroborating analysis from density functional calculations, we demonstrate that coherent phonons at the K-point of the Brillouin zone can effectively mediate the valley transfer of electron carriers. In the MoSe2 monolayer case, we identify this mode as the flexural acoustic ZA(K) mode, whic…
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking and strong spin-orbit coupling result in two degenerate states, one of the qubit states being spin-down located at the $+K$ valley of the Brillouin zone, and the other state located at the $-K$ valley w…
Monolayer transition-metal dichalcogenides (TMDCs) have recently emerged as possible candidates for valleytronic applications, as the spin and valley pseudospin are directly coupled and stabilized by a large spin splitting. In these semiconducting materials, optically excited electron-hole pairs form tightly Coulomb-bound excitons with large binding energies. The selection rules for excitonic transitions allow for direct optical generation of a valley-polarized exciton population using resonant excitation. Here, we investigate the exciton valley dynamics in monolayers of three different TMDCs …
Lateral-hetero structures of atomic layered materials alter the electronic properties of pristine crystals and provide a possibility to produce useful monolayer materials. We reveal that metal-semiconductor-metal lateral-hetero junctions of $1H$-transition-metal dichalcogenides intrinsically possess conducting channels of electrons with spin-valley locking, e.g., gate electrode. We theoretically investigate the electronic structure and transport properties of the lateral-hetero junctions and show that the hetero-structure produces conducting channels through the $K$ and $K'$ valleys in the sem…
We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys displays its own spin polarization and a specific spin-texture dictated by broken inversion and time-reversal symmetries, and valley-exchange and Rashba splittings as large as hundreds of meV. This provi…
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and regulate valley-polarized currents by practical ways. Here, we discover a new mechanism of producing valley polarization in a monolayer transition metal dichalcogenides superlattice, in which valley-resolved gaps are formed at the supercell Brillouin zone boundaries and centers due to the intervalley scattering. When the energy of the incident electron is i…
We consider theoretically staggered honeycomb lattices for photons which can be viewed as photonic analogs of transitional metal dichalcogenides (TMD) monolayers. We propose a simple realization of a photonic Quantum Valley Hall effect (QVHE) at the interface between two TMD analogs with opposite staggering on each side. This results in the formation of valley-polarized propagating modes whose existence relies on the difference between the valley Chern numbers, which is a $\mathbb{Z}_2$ topological invariant. We show that the magnitude of the photonic spin-orbit coupling based on the energy sp…
In this work, we predict the emergence of the valley Edelstein Effect (VEE), which is an electric-field-induced spin polarization effect, in gated monolayer transition metal dichalcogenides (MTMDs). We found an unconventional valley-dependent response in which the spin-polarization is parallel to the applied electric field with opposite spin-polarization generated by opposite valleys. This is in sharp contrast to the conventional Edelstein effect in which the induced spin-polarization is perpendicular to the applied electric field. We identify the origin of VEE as combined effects of conventio…
Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin diffusion length, and we develop a theory of weak localisation/antilocalisation, describing the crossovers between the orthogonal, double-unitary and symplectic regimes of quantum transport in TMDCs.
We develop an analytical theory for edge states in monolayers of transition metal dichalcogenides based on a general boundary condition for a two-band ${\bf kp}$-Hamiltonian in case of uncoupled valleys. Taking into account {\it edge} spin-orbit interaction we reveal that edge states, in general, have linear dispersion that is determined by three real phenomenological parameters in the boundary condition. In absence of the edge spin-orbit interaction, edge states are described by a single real parameter whose sign determines whether their spectra intersect the bulk gap or not. In the former ca…
Spin and valley dependent anomalous Nernst effect are analyzed for monolayer MoS2 and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of these two-dimensional materials. This effect provides a versatile platform for applications of spin caloritronics. A spin current purity factor is introduced to quantify this effect. When time reversal symmetry is violated, e.g. two-dimensional materials on an insulating magnetic substrate, a dip-peak feature appears for the total Nernst coefficient. For the…
In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here, we show that TMDC bilayers offer an unprecedented platform to realize a strong coupling between the spin, layer pseudospin, and valley degrees of freedom of holes. Such coupling not only gives rise to the spin Hall effect and spin circular dichroism in inversion symmetric bilayer, but also leads to a variety of magnetoelectric …
The rich phenomenology of plasmonic excitations in the dichalcogenides is analyzed as a function of doping. The many-body polarization, the dielectric response function and electron energy loss spectra are calculated using an ab initio based model involving material-realistic Coulomb interactions, band structure and spin-orbit coupling. Focusing on the representative case of MoS$_2$, a plethora of plasmon bands are observed, originating from scattering processes within and between the conduction or valence band valleys. We discuss the resulting square-root and linear collective modes, arising …
Floquet engineering of topological bands in semiconductor van der Waals heterobilayers
Universidad Nacional Autónoma de México（墨西哥国立自治大学）；Universidad Distrital Francisco José de Caldas（弗朗西斯科·何塞·德卡尔德斯地区大学）；Kennesaw State University（肯尼索州立大学）
The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized light, interband transitions generate an unbalanced non-equilibrium population of electrons and holes in these valleys, resulting in a finite Hall voltage at zero magnetic field when a current flows through the system. This is the so-called valley Hall effect that has recently been observed experimentally. Here, we show that this effect is mediated by photo-ge…
