The control of the dielectric and conductive properties of device-level systems is important for increasing the efficiency of energy- and information-related technologies. In some cases, such as neuromorphic computing, it is desirable to increase the conductivity of an initially insulating medium by several orders of magnitude, resulting in effective dielectric breakdown. Here, we show that by tuning the value of the applied electric field in systems { with variable permittivity and electric conductivity}, e.g. ion intercalation materials, we can vary the device-level electrical conductivity by orders of magnitude. We attribute this behavior to the formation of filament-like conductive domains that percolate throughout the system, { which form only when the electric conductivity depends on the concentration}. We conclude by discussing the applicability of our results in neuromorphic computing devices and Li-ion batteries.
Dielectric breakdown of strongly correlated insulators in one dimension: Universal formula from non-Hermitian sine-Gordon theory
University of California, Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；University of Tokyo（东京大学）；Kyoto University（京都大学）；Ritsumeikan University（立命馆大学）；Osaka University（大阪大学）
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Quantum and Nanotechnologies Research Centre, National Research Council Canada（加拿大国家研究委员会量子与纳米技术研究中心）；Department of Physics, University of Ottawa（渥太华大学物理系）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（日本物质材料研究机构材料纳米架构研究中心）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（日本物质材料研究机构电子与光学材料研究中心）；Department of Inorganic Chemistry, University of Chemistry and Technology Prague（布拉格化工大学无机化学系）
Casimir forces on suspended thin dielectric membranes covered with graphene
The Hong Kong University of Science and Technology（香港科技大学）；Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier（夏尔·库隆实验室（L2C），CNRS-蒙彼利埃大学联合研究单位5221）
