基于Buttiker探针的TDDB模型：在MTJ和MOS器件中的应用
Buttiker Probe Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices
摘要：
电介质层在不同的电子器件（如MOSFET和磁性隧道结（MTJ））中逐渐缩小，器件尺寸不断缩小。因此，时间相关介电击穿（TDDB）已成为此类装置中的主要问题。在本文中，我们提出了一种通用的方法来模拟应力诱导的漏电流（SILC）和后击穿电流（PBC）由于时间依赖的磨损的介质层。我们使用Buttiker探针模拟在电介质层中形成的陷阱，并将Buttiker探针自能纳入标准的自洽非平衡格林函数（NEGF）形式主义，以确定SILC和PBC。此外，我们已经示出了在MTJ的自旋电流和自旋过滤特性的电介质层的击穿的影响。拟议的模式是通用的。它可以从MTJ和常规CMOS技术扩展到具有任何类型的单层和多层电介质材料的任何其他器件。
英文摘要：
Dielectric layers are gradually being down-scaled in different electronic devices like MOSFETs and Magnetic Tunnel Junctions (MTJ) with shrinking device sizes. As a result, time dependent dielectric breakdown (TDDB) has become a major issue in such devices. In this paper we propose a generalized way of modeling the stress induced leakage current (SILC) and post breakdown current (PBC) due to time dependent wear-out of the dielectric layer. We model the traps formed in dielectric layer using Buttiker probe and incorporate the Buttiker probe self-energies in standard self-consistent Non-Equilibrium Green Function (NEGF) formalism in order to determine SILC and PBC. In addition, we have shown the impact of break down in the dielectric layer on the spin current and spin filtering characteristics of an MTJ. The proposed model is generic in nature. It can be extended from MTJs and conventional CMOS technology to any other devices with any type of single and multiple layers of dielectric material(s).
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