半金属LaAlGe薄膜的分子束外延生长
Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film
摘要：
本文报道了用分子束外延技术在硅（100）衬底上生长LaAlGe（一种非磁性Weyl半金属）薄膜的详细方法及其结构和电学特性。沉积了50 nm厚的LaAlGe薄膜，并在793 K下原位退火16 h。生长的高品质的薄膜表现出均匀的表面形貌和接近理想的化学计量与体心四晶结构。在5-40 K温度范围内，纵向电阻率随温度的变化可以用主要的带间s-d电子-声子散射来理解。霍尔测量证实了薄膜的半金属性质，在5 K时电子主导的载流子密度接近7.15*10^21 cm^-3。
英文摘要：
Here, we report a detailed method of growing LaAlGe, a non-magnetic Weyl semimetal, thin film on silicon(100) substrates by molecular beam epitaxy and their structural and electrical characterizations. 50 nm thick LaAlGe films were deposited and annealed for 16 hours in situ at a temperature 793 K. As-grown high-quality films showed uniform surface topography and near ideal stoichiometry with a body-centered tetragonal crystal structure. Temperature-dependent longitudinal resistivity can be understood with dominant interband s-d electron-phonon scattering in the temperature range 5-40 K. Hall measurements confirmed the semimetallic nature of the films with electron dominated charge carrier density near 7.15*10^21 cm^-3 at 5 K.
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