Fmax = 270 GHz InAlN/GaN HEMT在Si上，采用合成气体/氮气两步退火
Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing
摘要：
在这封信中，N2和形成气体（FG）的InAlN/GAN HEMT在Si上的欧姆接触退火过程中使用。研究发现，N2退火具有较低的欧姆接触电阻（RC），而FG退火具有较低的方块电阻（Rsheet）。采用FG/N2两步退火工艺，在50 nm InAlN/GAN HEMT上实现了113 mV/dec的亚阈值摆幅（SS）、约106的开/关电流（Ion/Ioff）比、415 mS/mm的峰值电流（gm）、65 mV/V的低漏诱导势垒降低（DIBL）和270 GHz的高功率增益截止频率（fmax）。
英文摘要：
In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC) while FG annealing features lower sheet resistance (Rsheet). Then FG/N2 two-step annealing was used to achieve a subthreshold swing (SS) of 113 mV/dec, an on/off current (Ion/Ioff) ratio of ~ 106, a transconductance (gm) peak of 415 mS/mm, a record low drain-inducing barrier lowing (DIBL) of 65 mV/V, and a record high power gain cutoff frequency (fmax) of 270 GHz on 50-nm InAlN/GaN HEMT on Si.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
