在这项工作中，我们已经证明了宽组成范围的\b{eta} -（AlxGa 1-x）2 O3薄膜与创纪录的高Al成分高达77%的\b{eta} -（AlxGa 1-x）2 O3覆盖从4.9到6.4 eV的带隙。通过优化热退火条件，在蓝宝石衬底上制备了\b{eta} -Ga 2 O 3二元薄膜，得到了不同成分的\b{eta} -（AlGa）2 O 3三元薄膜。Al原子从蓝宝石中扩散到氧化层中，同时Ga原子扩散到蓝宝石中，形成了比原始厚度更厚的薄膜。透射电子显微镜证实了相互扩散过程，该过程与退火温度成正比增强。分析了\b{eta} -（AlGa）2 O3薄膜的应变状态，发现随着退火温度的升高，薄膜的面内压应变减小，当退火温度为1400 oC（Al含量为77%）时，薄膜最终变为无应变。所提出的方法是有前途的制备\b{eta} -（AlGa）2 O3薄膜，而不采用复杂的直接生长技术的合金。
英文摘要：
In this work, we have demonstrated wide-composition-range \b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for \b{eta}-(AlxGa1-x)2O3 covering bandgaps from 4.9 to 6.4 eV. With optimized thermal annealing conditions, the \b{eta}-Ga2O3 binary thin films on sapphire substrates transformed to the \b{eta}-(AlGa)2O3 ternary thin films with different compositions. The binary to ternary transformation resulted from the Al atom diffusion from sapphire into the oxide layers; meanwhile, the Ga atoms diffused into sapphire leading to thicker thin films than the original thicknesses. The interdiffusion processes were confirmed by transmission electron microscopy, which enhanced in proportion to the annealing temperature. The strain states of the \b{eta}-(AlGa)2O3 films have been analyzed showing reduced in-plane compressive strain with higher annealing temperature; and the film eventually became strain-free when the temperature was 1400 oC corresponding to the Al composition of 77%. The proposed method is promising for the preparation of the \b{eta}-(AlGa)2O3 thin films without employing sophisticated direct-growth techniques for alloys.
Monolithic integration of diverse crystalline thin films on diamond for near-junction thermal management
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology（上海微系统与技术研究所集成电路材料国家重点实验室）；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences（中国科学院大学物质科学与光电技术研究中心）；International Center for Quantum Materials, School of Physics, Peking University（北京大学物理学院量子材料研究院）；School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen（哈尔滨工业大学（深圳）理学院工业和信息化部微纳光电子信息系统重点实验室）；CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute（南京电子设备研究所中国电科碳基电子重点实验室）；Tsientang Institute for Advanced Study（杭州钱塘高等研究院）
