适用于FinFET及其他产品的紧凑型器械型号
Compact Device Models for FinFET and Beyond
摘要：
紧凑的器件模型在连接器件技术和电路设计中起着重要作用。BSIM-CMG和BSIM-IMG分别是适用于FinFET和UTBB技术的行业标准紧凑型型号。其基于表面势的建模框架和对称性保持特性使其适用于模拟/RF和数字设计。在人工智能/深度学习时代，紧凑的模型进一步增强了我们探索RRAM和其他基于NVM的神经形态电路的能力。我们已经在NCKU展示了基于Verilog-A的紧凑模型的RRAM神经形态电路的仿真。进一步的抽象与宏模型执行，使更大规模的机器学习模拟。
英文摘要：
Compact device models play a significant role in connecting device technology and circuit design. BSIM-CMG and BSIM-IMG are industry standard compact models suited for the FinFET and UTBB technologies, respectively. Its surface potential based modeling framework and symmetry preserving properties make them suitable for both analog/RF and digital design. In the era of artificial intelligence / deep learning, compact models further enhanced our ability to explore RRAM and other NVM-based neuromorphic circuits. We have demonstrated simulation of RRAM neuromorphic circuits with Verilog-A based compact model at NCKU. Further abstraction with macromodels is performed to enable larger scale machine learning simulation.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
