Edge photocurrent driven by THz electric field in bi-layer graphene
S. Candussio, M. V. Durnev, S. A. Tarasenko, J. Yin, J. Keil, Y. Yang, S. -K. Son, A. Mishchenko, H. Plank, V. V. Bel'kov, S. Slizovskiy, V. Fal'ko, S. D. Ganichev
We report on the observation of edge electric currents excited in bi-layer graphene by terahertz laser radiation. We show that the current generation belongs to the class of second order in electric field phenomena and is controlled by the orientation of the THz electric field polarization plane. Additionally, applying a small magnetic field normal to the graphene plane leads to a phase shift in the polarization dependence. Increasing the magnetic field strength, the current starts to exhibit 1/B-magnetooscillations with a period consistent with that of the Shubnikov-de-Haas effect and amplitude by an order of magnitude larger as compared to the current at zero magnetic field measured under the same conditions. The microscopic theory developed shows that the current is formed in the edges vicinity limited by the mean-free path of carriers and the screening length of the high-frequency electric field. The current originates from the alignment of the free carrier momenta and dynamic accumulation of charge at the edges, where the P-symmetry is naturally broken. The observed magnetooscillations of the photocurrent are attributed to the formation of Landau levels.
To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for…
The ultrashort laser excitation of Co/Pt magnetic heterostructures can effectively generate spin and charge currents at the interfaces between magnetic and nonmagnetic layers. The direction of these photocurrents can be controlled by the helicity of the circularly polarized laser light and an external magnetic field. Here, we employ THz time-domain spectroscopy to investigate further the role of interfaces in these photo-galvanic phenomena. In particular, the effects of either Cu or ZnO interlayers on the photocurrents in Co/X/Pt (X = Cu, ZnO) have been studied by varying the thickness of the …
The dependence of the photocurrent generated in a Pd/graphene/Ti junction device on the incident photon polarization is studied. Spatially resolved photocurrent images were obtained as the incident photon polarization is varied. The photocurrent is maximum when the polarization direction is perpendicular to the graphene channel direction and minimum when the two directions are parallel. This polarization dependence can be explained as being due to the anisotropic electron-photon interaction of Dirac electrons in graphene.
Metal-graphene-metal photodetectors utilize photocurrent generated near the graphene/metal junctions and have many advantages including high speed and broad-band operation. Here, we report on photocurrent generation at ABA/ABC stacking domain junctions in tri-layer graphene with a responsivity of 0.18 A/W. Unlike usual metal-graphene-metal devices, the photocurrent is generated in the middle of the graphene channel, not confined to the vicinity of the metal electrodes. The magnitude and the direction of the photocurrent depend on the back-gate bias. Theoretical calculations show that there is …
Terahertz (THz) fields are widely applied for sensing, communication and quality control. In future applications, they could be efficiently confined, enhanced and manipulated - well below the classical diffraction limit - through the excitation of graphene plasmons (GPs). These possibilities emerge from the strongly reduced GP wavelength, lp, compared to the photon wavelength, l0, which can be controlled by modulating the carrier density of graphene via electrical gating. Recently, GPs in a graphene-insulator-metal configuration have been predicted to exhibit a linear dispersion (thus called a…
We investigate polarization-dependent ultrafast photocurrents in the Weyl semimetal TaAs using terahertz (THz) emission spectroscopy. Our results reveal that highly directional, transient photocurrents are generated along the non-centrosymmetric c-axis regardless of incident light polarization, while helicity-dependent photocurrents are excited within the ab-plane. This is consistent with earlier static photocurrent experiments, and demonstrates on the basis of both the physical constraints imposed by symmetry and the temporal dynamics intrinsic to current generation and decay that optically i…
A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is di…
Photoexcitation of graphene leads to an interesting sequence of phenomena, some of which can be exploited in optoelectronic devices based on graphene. In particular, the efficient and ultrafast generation of an electron distribution with an elevated electron temperature and the concomitant generation of a photo-thermoelectric voltage at symmetry-breaking interfaces is of interest for photosensing and light harvesting. Here, we experimentally study the generated photocurrent at the graphene-metal interface, focusing on the time-resolved photocurrent, the effects of photon energy, Fermi energy a…
We calculate the photocurrent in a clean graphene sample normally irradiated by a monochromatic electromagnetic field and subject to a step-like electrostatic potential. We consider the photon energies $\hbarΩ$ that significantly exceed the height of the potential barrier, as is the case in the recent experiments with graphene-based photodetectors. The photocurrent comes from the resonant absorption of photons by electrons and decreases with increasing ratio $\hbarΩ/U_0$. It is weakly affected by the background gate voltage and depends on the light polarization as $\propto\sin^2γ$, $γ$ being t…
Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very inefficient electron cooling, resulting in an abundance of hot carriers. The hot-carrier-mediated energy transport dominates the photoresponse and manifests itself in quantum efficiencies that can exceed unity, as well as in a characteristic dependence of the photocurrent on gate voltages. The pattern of multiple photocurrent sign changes as a function of ga…
Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO$_2$)/Si areas, where the graphene is contacted. Here, we utilize scanning photocurrent measurements to investigate the spatial distribution and explain the physical origin of photocurrent generation in these devices. We observe distinctly higher photocurrents underneath the isolating region of graphene on SiO$_2$ adjacent to the…
The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature th…
Q. Ma et al.[1] recently reported a strong photocurrent associated with charge neutrality in graphene devices with non-uniform geometries, which they interpreted as an intrinsic photoresponse enhanced by the momentum non-relaxing nature of electron-electron collisions at charge neutrality. Here we argue that gradients in charge carrier density give rise to a photothermoelectric effect (PTE) which is strongly peaked around charge neutrality, i.e. at p-n junctions, and such p-n junctions naturally arise at the edges of graphene devices due to fringing capacitance. Using known parameters, the PTE…
We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear edge photocurrent is developed. Comparison of the experimental data and theory demonstrates that the nonlinearity of the photocurrent is caused by the interplay of two mechanisms, i.e. by direct inter-b…
We report the study of the helicity driven photocurrents in graphene excited by mid-infrared light of a CO$_2$-laser. Illuminating an unbiased monolayer sheet of graphene with circularly polarized radiation generates -- under oblique incidence -- an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. We show that the current is caused by the interplay of the circular $ac$ Hall effect and the circular photogalvanic effect. Studying the frequency dependence of the current in graphene layers grown on the SiC substrate we observe th…
We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotron resonance (CR) and produce strong resonant features, the inter-band-LL resonances have quantum nature and lead to the weaker features in the measured photocurrent spectra. The magnitude and polariza…
We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photo-thermoelectric effect. Consistent with the photocurrent study, infrared nano-imaging experiments reveal optical conductivity features dominated by twist-angle dependent interband transitions. Our results p…
We propose a new type of photoresponse induced in asymmetric Weyl semimetals in an external magnetic field. In usual symmetric Weyl semimetals in a magnetic field, the particles and holes produced by an incident light in different Weyl cones have opposite helicities and hence move in opposite directions, canceling each others's contributions to the photocurrent. However this cancelation does not occur if the Weyl semimetal possesses both a broken particle-hole symmetry and a broken spatial inversion symmetry. We call the resulting generation of photocurrent the helical magnetic effect because …
Monolayer graphene aligned with hexagonal boron nitride (hBN) develops a gap at the charge neutrality point (CNP). This gap has previously been extensively studied by electrical transport through thermal activation measurements. Here, we report the determination of the gap size at the CNP of graphene/hBN superlattice through photocurrent spectroscopy study. We demonstrate two distinct measurement approaches to extract the gap size. A maximum of ~ 14 meV gap is observed for devices with a twist angle of less than 1 degree. This value is significantly smaller than that obtained from thermal acti…
Quasi-periodic moiré patterns and their effect on electronic properties of twisted bilayer graphene (TBG) have been intensely studied. At small twist angle $θ$, due to atomic reconstruction, the moiré superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck coefficient occurring at these domain walls. The observed features become enhanced in a range of mid-infrared frequencies where the hexagonal boron nitride (hBN), which we use as a TBG substrate, is …
We report on a room-temperature photodetector utilizing semimetal bismuth nanowire arrays coupled with graphene. The structural flatness and high electron mobility of graphene exhibit great potential for future generations of electronic materials. Bismuth nanowire arrays coupled with graphene have strong absorption because of light trapping. Bismuth (Bi), as a semimetal, complements graphene's gapless and mobility characteristics. Bi also features a long screening length (4 nm) comparable to semiconductors. Raman spectroscopy is used to characterize the charge transfer between graphene and Bi.…
Magnetic injection photocurrents in valley polarized states of twisted bilayer graphene
Donostia International Physics Center（圣塞巴斯蒂安国际物理中心）；Department of Physics, Columbia University（哥伦比亚大学物理系）；IKERBASQUE, Basque Foundation for Science（伊卡巴斯基克，巴斯克科学基金会）
Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits the confinement of plasma waves in a field-effect transistor (FET), whereby a dc photovoltage is generated in response to a THz field. This scheme has already been experimentally studied in a graphene FET [L. Vicarelli et al., Nature Mat. 11, 865 (2012)]. In the quest for devices with a better signal-to-noise ratio, we theoretically investigate a plasma-wave photodetector in which a dc photocurrent is generated in a graphene FET. The r…
It is commonly assumed that photocurrent in two-dimensional systems with centrosymmetric lattice is generated at structural inhomogenities, such as p-n junctions. Here, we study an alternative mechanism of photocurrent generation associated with inhomogenity of the driving electromagnetic field, termed as 'plasmonic drag'. It is associated with direct momentum transfer from field to conduction electrons, and can be characterized by a non-local non-linear conductivity $σ^{(2)}({\bf q},ω)$. By constructing a classical kinetic model of non-linear conductivity with full account of non-locality, we…
We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the…
Ultrafast photo-thermoelectric currents in graphene junctions in the mid-infrared
Walter Schottky Institute and Physics Department, Technical University of Munich（慕尼黑工业大学瓦尔特·肖特基研究所和物理系）；Munich Center for Quantum Science and Technology (MCQST)（慕尼黑量子科学与技术中心）；TUM School of Natural Sciences, Department of Chemistry and Atomistic Modeling Center, Munich Data Science Institute, Technical University of Munich（慕尼黑工业大学自然科学学院化学系与原子模拟中心、慕尼黑数据科学研究所）；Two-Dimensional Crystal Consortium, The Pennsylvania State University（宾夕法尼亚州立大学二维晶体联盟）；Department of Materials Science and Engineering, The Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）；Department of Chemistry, The Pennsylvania State University（宾夕法尼亚州立大学化学系）；Department of Physics, The Pennsylvania State University（宾夕法尼亚州立大学物理系）；Department of Engineering Science and Mechanics, The Pennsylvania State University（宾夕法尼亚州立大学工程力学系）
Terahertz field induced photocurrents in graphene were studied experimentally and by microscopic modeling. Currents were generated by cw and pulsed laser radiation in large area as well as small-size exfoliated graphene samples. We review general symmetry considerations leading to photocurrents depending on linear and circular polarized radiation and then present a number of situations where photocurrents were detected. Starting with the photon drag effect under oblique incidence, we proceed to the photogalvanic effect enhancement in the reststrahlen band of SiC and edge-generated currents in …
We demonstrate optical coherent control of the emission direction of THz radiation. Femtosecond laser pulses are used to excite different types of ultrafast photocurrents along different directions in a bulk GaAs sample. The overall emission pattern can be modified by changing the phase of the optical excitation. With this method, THz beam steering of about 8 degrees is realized. A simple dipole-based model allows us to relate the size of the steering effect to the amplitude ratio between the different photocurrent contributions and to diffraction effects resulting from the excitation spot siz…
Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substrate (SiO2) surface polar phonons. Their excitation by s-polarization leads to an in-resonance photocurrent an order of magnitude larger than the photocurrent observed for p-polarization, which excites…
We use the terahertz (THz) emission spectroscopy to study femtosecond photocurrent dynamics in the prototypical 2D semiconductor, transition metal dichalcogenide MoSe$_2$. We identify several distinct mechanisms producing THz radiation in response to an ultrashort ($30\,$fs) optical excitation in a bilayer (BL) and a multilayer (ML) sample. In the ML, the THz radiation is generated at a picosecond timescale by out-of-plane currents due to the drift of photoexcited charge carriers in the surface electric field. The BL emission is generated by an in-plane shift current. Finally, we observe oscil…
We demonstrate that surface plasmon resonances excited by photon tunneling through an adjacent dielectric medium enhance photocurrent detected by a graphene photodetector. The device is created by overlaying a graphene sheet over an etched gap in a gold film deposited on glass. The detected photocurrents are compared for five different excitation wavelengths, ranging from nm to nm. The photocurrent excited with incident p-polarized light (the case for resonant surface plasmon excitation) is significantly amplified in comparison with that for s-polarized light (without surface plasmon resonance…
We propose a terahertz radiation source based on the excitation of plasma resonances in graphene structures by means of mixing two NIR laser signals with a THz difference frequency. The process is the photo-thermo-electric effect which has recently been demonstrated to be operative at THz frequencies in graphene. An antenna couples the THz radiation out of the sub-wavelength graphene element and into the far field. The emission is monochromatic with a bandwidth determined by that of the NIR laser sources. The output power of the device as a function of the emitter frequency is estimated at ten…
Photocurrent measurements provide a powerful means of studying the spatially resolved optoelectronic and electrical properties of a material or device. Generally speaking there are two classes of mechanism for photocurrent generation: those involving separation of electrons and holes, and thermoelectric effects driven by electron temperature gradients. Here we introduce a new member in the latter class: the photo-Nernst effect. In graphene devices in a perpendicular magnetic field we observe photocurrent generated uniformly along the free edges, with opposite sign at opposite edges. The signal…
Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear tensor in epitaxial graphene as a novel approach to probe interlayer electronic coupling, by studying THz emission from coherently controlled photocurrents as a function of the optical pump and THz beam polarizations. We find that the polarization dependence of the coherently controlled THz emission expected from perfectly uncoupled layers, i.e. a single gr…
We study the light matter interaction in WS$_{2}$ nanotube-graphene hybrid devices. Using scanning photocurrent microscopy we find that by engineering graphene electrodes for WS$_{2}$ nanotubes we can improve the collection of photogenerated carriers. We observe inhomogeneous spatial photocurrent response with an external quantum efficiency of $\sim 1\%$ at 0 V bias. We show that defects play an important role and can be utilized to enhance and tune photocarrier generation.
When the Fermi level matches the Dirac point in graphene, the reduced charge screening can dramatically enhance electron-electron (e-e) scattering to produce a strongly interacting Dirac liquid. While the dominance of e-e scattering already leads to novel behaviors, such as electron hydrodynamic flow, further exotic phenomena have been predicted to arise specifically from the unique kinematics of e-e scattering in massless Dirac systems. Here, we use optoelectronic probes, which are highly sensitive to the kinematics of electron scattering, to uncover a giant intrinsic photocurrent response in…
DC photoelectrical currents can be generated purely as a non-linear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These currents are strongly dependent on the polarization state of the radiation, as well as on topological properties of the underlying Fermi surface such as its Berry curvature. In order to study the intrinsic photogalvanic response of gapped graphene (GG), biased bilayer graphene (BBG), and hexagonal boron nitride (hBN), we compute the non-linear current using a pe…
We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show that the observed photoresponse nonlinearities are caused by the band-to-band \emph{light} impact ionization under conditions of a photon energy less than the forbidden gap. The signature of this kind …
We demonstrate efficient terahertz (THz) modulation by coupling graphene strongly with a broadband THz metasurface device. This THz metasurface, made of periodic gold slit arrays, shows near unity broadband transmission, which arises from coherent radiation of the enhanced local-field in the slits. Utilizing graphene as an active load with tunable conductivity, we can significantly modify the local-field enhancement and strongly modulate the THz wave transmission. This hybrid device also provides a new platform for future nonlinear THz spectroscopy study of graphene.
We report on temperature dependent photocurrent measurements of high-quality dual-gated monolayer graphene (MLG) p-n junction devices. A photothermoelectric (PTE) effect governs the photocurrent response in our devices, allowing us to track the hot electron temperature and probe hot electron cooling channels over a wide temperature range (4 K to 300 K). At high temperatures ($T > T^*$), we found that both the peak photocurrent and the hot spot size decreased with temperature, while at low temperatures ($T < T^*$), we found the opposite, namely that the peak photocurrent and the hot spot size i…
Using transient absorption (TA) microscopy as a hot electron thermometer we show disorder-assisted acoustic-phonon supercollisions (SCs) best describes the rate-limiting relaxation step in graphene over a wide range of lattice temperatures ($T_l=$5-300 K), Fermi energies ($E_F=\pm0.35$ eV), and optical probe energies (~0.3 - 1.1 eV). Comparison with simultaneously collected transient photocurrent, an independent hot electron thermometer, confirms the rate-limiting optical and electrical response in graphene are best described by the SC-heat dissipation rate model, $H=A(T^3_e- T^3_l)$. Our data…
The conductivity of graphene on a boron nitride substrate exhibits features in the terahertz (THz) and infrared (IR) frequency regimes that are associated with the periodic moiré pattern formed by the weakly coupled two-dimensional materials. The THz and IR features are strongest when the two honeycomb lattices are orientationally aligned, and in this case are Pauli blocked unless the Fermi level is close to $\pm 150$ meV relative to the graphene sheet Dirac point. Because the transition energies between moiré bands formed above the Dirac point are small, ac conductivity features in n-doped gr…
Observations of terahertz loss to gain switching in transmission through gates on biased graphene sandwiches are explained by response under electron streaming in graphene. Basing on this consideration the terahertz source is proposed consisting of silicon resonator placed on the sandwich with current flow in graphene. It should provide tunable by bias emission in wide terahertz band. The source is direct terahertz analog of tunable microwave laser demonstrated.
We explore the potential of bilayer graphene as a cryogenic microwave photodetector by studying the microwave absorption in fully suspended clean bilayer graphene pn junctions in the frequency range of $1-5$ GHz at a temperature of 8 K. We observe a distinct photocurrent signal if the device is gated into the pn regime, while there is almost no signal for unipolar doping in either the nn or pp regimes. Most surprisingly, the photocurrent strongly peaks when one side of the junction is gated to the Dirac point (charge-neutrality point CNP), while the other remains in a highly doped state. This …
Epitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale. The THz near-field images show variation of graphene properties on a scale smaller than the wavelength, and excitation of THz surface waves occurring at graphene edges, similar to that observed at metallic edges. The Fresnel reflection at the substrate SiC/air interface is also found to be altered by the presence of graphene ribbon arrays, leading to either reduced or enhanced transmission of the THz wa…
Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room tem…
We theoretically study the occurrence of Bloch oscillations in biased hybrid graphene systems with spin-dependent superlattices. The spin-dependent potential is realized by a set of ferromagnetic insulator strips deposited on top of a gapped graphene nanoribbon, which induce a proximity exchange splitting of the electronic states in the graphene monolayer. We numerically solve the Dirac equation and study Bloch oscillations in the lowest conduction band of the spin-dependent superlattice. While the Bloch frequency is the same for both spins, we find the Bloch amplitude to be spin dependent. Th…
We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than 1/3 of the total channel length from both source and drain sides, hence most of the channel is affected by the metal. The potential barrier between the metal controlled graphene and bulk graphene channel is also measured at various gate biases. As the gate bias exceeds the Dirac point voltage, VDirac, the original p-type graphene channel turns into a p-n-p c…
We theoretically investigate the ultrafast terahertz(THz) properties of monolayer graphene. The analytical formulations of the photon carrier, electric polarization and optical current are obtained by solving the Bloch-equations in present of the ultrafast THz Gaussian pulse. Graphene shows a large nonlinear and ultrafast optical response at THz frequencies due to the gapless and relativistic Dirac particles with nearly linear energy dispersion. It is found that the photon carrier density, electric polarization and optical current density increase with increasing the frequency of the THz pulse…
Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of $\sim$1…
The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible wavelengths regions only, in which the response due to silicon is dominant. Here we present comparative SPM studies in the visible ($λ$ = 633nm) and infrared ($λ$ = 1550nm) wavelength regions for a number of GSi Schottky junction photodetector architectures, revealing the photoresponse mechanisms for silicon and graphene dominated responses, respectively, an…
The plane wave scattering and absorption by finite and infinite gratings of free-space standing infinitely long graphene strips are studied in the THz range. A novel numerical approach, based on graphene surface impedance, hyper-singular integral equations, and the Nystrom method, is proposed. This technique guarantees fast convergence and controlled accuracy of computations. Reflectance, transmittance, and absorbance are carefully studied as a function of graphene and grating parameters, revealing the presence of surface plasmon resonances. Specifically, larger graphene relaxation times incre…
In framework of classical consideration of electron trajectories in crossed electric and magnetic fields and conductivity of electron system on cyclotron resonance in single layer graphene possibility to achieve cyclotron lasing in hexagonal boron nitride single layer graphene sandwiches is discussed. By simplified consideration with known data on scattering rate in the sandwiches it is demonstrated that the continuing wave laser action can be achieved in high quality sandwiches at room temperature at frequencies above one tera hertz in magnetic field above one Tesla.
The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer structures, the indirect interband radiative transitions accompanied by scattering of carriers caused by disorder can provide a substantial negative contribution to the THz conductivity (together with the di…
The cooling of hot electrons in graphene is the critical process underlying the operation of exciting new graphene-based optoelectronic and plasmonic devices, but the nature of this cooling is controversial. We extract the hot electron cooling rate near the Fermi level by using graphene as novel photothermal thermometer that measures the electron temperature ($T(t)$) as it cools dynamically. We find the photocurrent generated from graphene $p-n$ junctions is well described by the energy dissipation rate $C dT/dt=-A(T^3-T_l^3)$, where the heat capacity is $C=αT$ and $T_l$ is the base lattice te…
