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arXiv 2004.11200cond-mat.str-el
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Resonant inelastic x-ray scattering study of doping and temperature dependence of low-energy excitations in La$_{1-x}$Sr$_x$VO$_3$

Kari Ruotsalainen, Matteo Gatti, James M. Ablett, Flora Yakhou-Harris, Jean-Pascal Rueff, Adrian David, Wilfrid Prellier, Alessandro Nicolaou

英文摘要:

We present a temperature and doping dependent resonant inelastic X-ray scattering experiment at the V L$_{2,3}$ and O K edges in La$_{1-x}$Sr$_x$VO$_3$ for $x=0$ and $x=0.1$. This material is a canonical example of a compound that exhibits a filling control metal-insulator transition and undergoes orbital ordering and antiferromagnetic transitions at low temperature. Temperature dependent measurements at the V L$_{3}$ edge reveal an intra-t$_{2g}$ excitation that blueshifts by 40 meV from room temperature to 30 K at a rate that differs between the para- and antiferromagnetic phases. The lineshape can be partially explained by a purely local model using crystal field theory calculations. At $x=0.1$ the doping is shown to affect the local electronic structure primarily on the O sites, which is in disagreement with a simple Mott-Hubbard picture. We reveal the presence of phonon overtone features at the O K edge, which evidences that the low energy part of the spectrum is dominated by phonon response.

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