Opto-Mechanical Tuning of the Polarization Properties of Micropillar Cavity Systems with embedded Quantum Dots
Stefan Gerhardt, Magdalena Moczała-Dusanowska, Łukasz Dusanowski, Tobias Huber, Simon Betzold, Javier Martín-Sánchez, Rinaldo Trotta, Ana Predojević, Sven Höfli… 展开作者
Stefan Gerhardt, Magdalena Moczała-Dusanowska, Łukasz Dusanowski, Tobias Huber, Simon Betzold, Javier Martín-Sánchez, Rinaldo Trotta, Ana Predojević, Sven Höfling, Christian Schneider
Strain tuning emerged as an appealing tool to tune fundamental optical properties of solid state quantum emitters. In particular, the wavelength and fine structure of quantum dot states could be tuned using hybrid semiconductor-piezoelectric devices. Here, we show how an applied external stress can directly impact the polarization properties of coupled InAs quantum dot-micropillar cavity systems. In our experiment, we find that we can reversibly tune the anisotropic polarization splitting of the fundamental microcavity mode by approximately 60 $μ\text{eV}$. We discuss the origin of this tuning mechanism, which arises from an interplay between elastic deformation and the photoelastic effect in our micropillar. Finally, we exploit this effect to tune the quantum dot polarization opto-mechanically via the polarization-anisotropic Purcell effect. Our work paves the way for optomechanical and reversible tuning of the polarization and spin properties of light-matter coupled solid state systems.
We report on the realization of micropillars with site-controlled quantum dots (SCQDs) in the active layer. The SCQDs are grown via the buried stressor approach which allows for the positioned growth and device integration of a controllable number of QDs with high optical quality. This concept is very powerful as the number and the position of SCQDs in the cavity can be simultaneously controlled by the design of the buried stressor. The fabricated micropillars exhibit a high degree of position control for the QDs above the buried stressor and $Q$-factors of up to 12000 at an emission wavelengt…
Recent experiments demonstrated that GaAs-AlAs based micropillar cavities are promising systems for quantum optomechanics, allowing the simultaneous three-dimensional confinement of near-infrared photons and acoustic phonons in the 18-100 GHz range. Here, we investigate through numerical simulations the optomechanical properties of this new platform. We evidence how the Poisson's ratio and semiconductor-vacuum boundary conditions lead to very distinct features in the mechanical and optical three dimensional confinement. We find a strong dependence of the mechanical quality factor and strain di…
The coupling of CdTe/ZnTe quantum dot (QD) emission to micropillar cavity eigenmodes in the weak coupling regime is demonstrated. We analyze photoluminescence spectra of QDs embedded in monolithic micropillar cavities based on Bragg mirrors which contain MgSe/ZnTe/MgTe superlattices as low-index material. The pillar emission shows pronounced cavity eigenmodes and their spectral shape is in good agreement with simulations. QD emission in resonance with the cavity mode is shown to be efficiently guided toward the detector and an experimental Purcell enhancement by a factor of 5.7 is determined, …
Scalable quantum photonic architectures demand highly efficient, high-purity single-photon sources, which can be frequency matched via external tuning. We demonstrate a single-photon source based on an InAs quantum dot embedded in a micropillar resonator, which is frequency tunable via externally-applied stress. Our platform combines the advantages of a Bragg micropillar cavity and the piezo-strain-tuning technique enabling single photon spontaneous emission enhancement via the Purcell effect and quantum dot (QD) with tunable wavelength. Our optomechanical platform has been implemented by inte…
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.
Scalable photonic quantum technologies require on-demand single-photon sources with simultaneously high levels of purity, indistinguishability, and efficiency. These key features, however, have only been demonstrated separately in previous experiments. Here, by s-shell pulsed resonant excitation of a Purcell-enhanced quantum dot-micropillar system, we deterministically generate resonance fluorescence single photons which, at pi pulse excitation, have an extraction efficiency of 66%, single-photon purity of 99.1%, and photon indistinguishability of 98.5%. Such a single-photon source for the fir…
Quantum dots (QDs) are semiconductor nanostructures in which a three dimensional potential trap produces an electronic quantum confinement, thus mimicking the behaviour of single atomic dipole-like transitions. However unlike atoms, QDs can be incorporated into solid state photonic devices such as cavities or waveguides that enhance the light-matter interaction. A near unit efficiency light-matter interaction is essential for deterministic, scalable quantum information (QI) devices. In this limit, a single photon input into the device will undergo a large rotation of the polarization of the li…
We present a theoretical model describing the photo-electrical response of a system composed of quantum dots embedded in a dielectric matrix. The model is based on the non-coherent rate equations and the Transfer Hamiltonian formalism. The self charge was included. Within this methodology, the response of the system only depends on fundamental material parameters and its geometry. Transport through several quantum dot configurations was simulated obtaining current-voltage curves in dark and illuminating conditions for three different scenarios: single one quantum dot and two quantum dots in pa…
We investigate correlations between orthogonally polarized cavity modes of a bimodal micropillar laser with a single layer of self-assembled quantum dots in the active region. While one emission mode of the microlaser demonstrates a characteristic s-shaped input-output curve, the output intensity of the second mode saturates and even decreases with increasing injection current above threshold. Measuring the photon auto-correlation function g^{(2)}(τ) of the light emission confirms the onset of lasing in the first mode with g^{(2)}(0) approaching unity above threshold. In contrast, strong photo…
Brillouin Scattering Selection Rules in Polarization-Sensitive Photonic Resonators
Université Paris-Saclay（巴黎萨克雷大学）；CNRS, Centre de Nanosciences et de Nanotechnologies（法国国家科学研究中心，纳米科学中心）；Quandela SAS（Quandela公司）；Université Paris-Cité（巴黎西岱大学）；Institute of Physics, Carl von Ossietzky University（卡尔·冯·奥西茨基大学物理研究所）
We perform extended numerical studies to maximize the overall photon coupling efficiency of fiber-coupled quantum dot single-photon sources emitting in the near-infrared and telecom regime. Using the finite element method, we optimize the photon extraction and fiber-coupling efficiency of quantum dot single-photon sources based on micromesas, microlenses, circular Bragg grating cavities and micropillars. The numerical simulations which consider the entire system consisting of the quantum dot source itself, the coupling lens, and the single-mode fiber yield overall photon coupling efficiencies …
Van der Waals heterostructures usually formed using atomic thin transition metal dichalcogenides (TMDCs) with a direct bandgap in the near-infrared to the visible range are promising candidates for low-dimensional optoelectronic applications. The interlayer interaction or coupling between two-dimensional (2D) layer and the substrate or between adjacent 2D layers plays an important role in modifying properties of the individual 2D material or device performances through Coulomb interaction or forming interlayer excitons. Here, we report the realization of quasi zero-dimensional (0D) photon emis…
We present detuning-dependent spectral and decay-rate measurements to study the difference between spectral and dynamical properties of single quantum dots embedded in micropillar and photonic-crystal cavities. For the micropillar cavity, the dynamics is well described by the dissipative Jaynes-Cummings model, while systematic deviations are observed for the emission spectra. The discrepancy for the spectra is attributed to coupling of other exciton lines to the cavity and interference of different propagation paths towards the detector of the fields emitted by the quantum dot. In contrast, qu…
We use fast coherent reflectivity measurements, in a strongly-coupled quantum dot-micropillar device, to monitor in real-time single-charge jumps at the microsecond timescale. Thanks to the strong enhancement of light-matter interaction inside the cavity, the measurement rate is five orders of magnitude faster than with previous experiments of direct single-charge sensing with quantum dots. The monitored transitions, identified at any given time with a less than 0.2% error probability, correspond to a carrier being captured and then released by a single material defect. This high-speed techniq…
We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, this opto-mechanical interaction enables the dynamical tuning of two neighboring QDs into resonance, possibly allowing for emitter-emitter coupling. Both the QDs and the coupling mechanism -- material strain -- are intrinsic to the NW structure and do not depend on any functionalization or external field. Such systems open …
We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiative lifetime of excitons confined in the shell quantum dots is 1.7 ns. We show that excitons may tunnel toward adjacent shell quantum dots and nonradiative point defects. We investigate the changes in…
The origin of visible light emission from nanostructures has been a subject of an intense debate since the early work by L. E. Brus and A. P. Alivisatos in 1980s. The intense research that followed has paved the way towards applications of quantum structures in optoelectronics and in bio-sensing and contributed to the development of nanotechnology. The major new challenge is in accessing the structural, electronic and optical properties of quantum dots on a nanoparticle scale in order to understand complex relationships between structural motifs and their contributions to the relevant physical…
The optomechanical coupling of quantum dots and flexural mechanical modes is studied in suspended nanophononic strings. The investigated devices are designed and monolithically fabricated on an (Al)GaAs heterostructure. Radio frequency elastic waves with frequencies ranging between $f$=250 MHz to 400 MHz are generated as Rayleigh surface acoustic waves on the unpatterned substrate and injected as Lamb waves in the nanophononic string. Quantum dots inside the nanophononic string exhibit a 15-fold enhanced optomechanical modulation compared to those dynamically strained by the Rayleigh surface a…
The excitonic fine structure plays a key role for the quantum light generated by semiconductor quantum dots, both for entangled photon pairs and single photons. Controlling the excitonic fine structure has been demonstrated using electric, magnetic, or strain fields, but not for quantum dots in optical cavities, a key requirement to obtain high source efficiency and near-unity photon indistinguishability. Here, we demonstrate the control of the fine structure splitting for quantum dots embedded in micropillar cavities. We propose a scheme based on remote electrical contacts connected to the pi…
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a…
Due to their ability to strongly modify the local electromagnetic (EM) field through the excitation of surface plasmon polaritons (SPPs), plasmonic nanostructures have been often used to reshape the emission direction and enhance the radiative decay rate of quantum emitters, such as semiconductor quantum dots (QDs). These features are essential for quantum information processing, nanoscale photonic circuitry and optoelectronics. However, the modification and enhancement demonstrated thus far often drastically alter the local energy density of the emitters, and hence their intrinsic properties,…
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional S…
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the growth much more challenging compared with growths on thin-films, particularly on NWs with small diameters (Ø <100 nm). Moreover, the {110} sidewall facets of self-catalyzed NWs favor two-dimensional growth (2D), with the realization of three-dimensional (3D) Stranski-Krastanow growth becoming extremely challenging. Here, we demonstrate thermally-driven format…
We fabricated an acousto-optic semiconductor hybrid device for strong optomechanical coupling of individual quantum emitters and a surface acoustic wave. Our device comprises a surface acoustic wave chip made from highly piezoelectric LiNbO$_3$ and a GaAs-based semiconductor membrane with an embedded layer of quantum dots. Employing multi-harmonic transducers, we generated sound waves on LiNbO$_3$ over a wide range of radio frequencies. We monitored their coupling to and propagation across the semiconductor membrane both in the electrical and optical domain. We demonstrate enhanced optomechani…
Finding out how symmetry encodes optical polarization information into the selection rule in molecules and materials is important for their optoelectronic applications including spectroscopic analysis, display technology and quantum computation. Here, we extend the polarization-dependent selection rules from atoms to solid systems with point group descriptions via rotational operator for circular polarization and $2$-fold rotational operator (or reflection operator) for linear polarization. As a variant of graphene quantum dot (GQD), twisted bilayer graphene quantum dot (TBGQD) certainly inher…
We discuss the fine-tuning of the optical properties of self-assembled quantum dots by the strain perturbation introduced by laser-induced surface defects. We show experimentally that the quantum dot transition red-shifts, independently of the actual position of the defect, and that such frequency shift is about a factor five larger than the corresponding shift of a micropillar cavity mode resonance. We present a simple model that accounts for these experimental findings.
A hybrid device comprising a (Al)GaAs quantum dot heterostructure and a LiNbO$_3$ surface acoustic wave resonator is fabricated by heterointegration. High acoustic quality factors $Q>4000$ are demonstrated for an operation frequency $f\approx 300$ MHz. The measured large quality factor-frequency products $Q\times f>10^{12}$ ensures the suppression of decoherence due to thermal noise for temperatures exceeding $T>50\,\mathrm{K}$. Frequency and position dependent optomechanical coupling of single quantum dots and the resonator modes is observed.
The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled-photons. Semiconductor quantum dots are arguably the most attractive. They can generate indistinguishable entangled-photons deterministically, and are compatible with current photonic-integration technologies, a set of properties not shared by any other entanglement resource. However, as no two quantum dots are identical, they emit entangled-photons with random energies. This hinders their exploitation in communication protocols requiring entan…
In an oxide apertured quantum dot (QD) micropillar cavity-QED system, we found strong QD hysteresis effects and lineshape modifications even at very low intensities corresponding to less than 0.001 intracavity photons. We attribute this to the excitation of charges by the intracavity field; charges that get trapped at the oxide aperture, where they screen the internal electric field and blueshift the QD transition. This in turn strongly modulates light absorption by cavity QED effects, eventually leading to the observed hysteresis and lineshape modifications. The cavity also enables us to obse…
It is known that, by taking advantage of heteroatom doping, the electronic states and transition channels in carbon nano-dots (CNDs) can be effectively modulated. Thus, the photoluminescence (PL) properties of CNDs can be changed. For potential applications of CNDs as advanced materials for optoelectronic devices, it is important and significant to develop the practical techniques for doping heteroatoms into CNDs. In this work, we synthesize the multi-color fluorescent by using a fast and effective microwave method where the CNDs are nitrogen-doped. We examine the influence of different ratios…
Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped zero-dimensional quantum dots made of semiconductor nanocrystals have been demonstrated to be promising materials for luminescent solar concentrators (LSCs) as they can be engineered for providing Stokes-shifted tunable emission in the solar spectrum. However, existing doped colloidal quantum dots suffer from moderately low quantum efficiency and intrinsically small absorption cross-section, which…
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets, and optical properties for a series of coupled quantum dots comprised of II-VI semiconductor using a hybrid functional method. We have shown how the quantum confinement and interfacial strain considerably affect the band gap and band offsets for these heterostructures at the nanoscale. We show that the trend in band offsets obtained from our first-principles…
Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single co…
Recently lead halide nanocrystals (quantum dots) have been reported with potential for photovoltaic and optoelectronic applications due to their excellent luminescent properties. Herein excitonic photoluminescence (PL) excited by two-photon absorption in perovskite CsPbBr3 quantum dots (QDs) have been studied across a broad temperature range from 80K to 380K. Two-photon absorption has been investigated with absorption coefficient up to 0.085 cm/GW at room temperature. Moreover, the photoluminescence excited by two-photon absorption shows a linear blue-shift (0.25meV/K) below temperature of ~22…
Polariton emission from optical cavities integrated with various luminophores has been extensively studied recently due to the wide variety of possible applications in photonics, particularly promising in terms of fabrication of low-threshold sources of coherent emission. Tuneable microcavities allow extensive investigation of the photophysical properties of matter placed inside the cavity by deterministically changing the coupling strength and controllable switching from weak to strong and ultra-strong coupling regimes. Here we demonstrate room temperature strong coupling of exciton transitio…
In semiconductors, photoexcited electrons and holes (carriers) initially occupy high-energy states, but quickly lose energy to phonons and relax to the band edge within a picosecond [1]. Increasing the lifetime of carriers in light-absorbing materials is necessary to improve open-circuit voltage in photovoltaics [2], charge separation in organic solar cells [3], and charge transfer in photodetection de vices [4]. Here we demonstrate long lifetimes over one hundred picoseconds for electron-hole pairs in graphene quantum dots (GQDs) due to large transition energies and weak coupling to excitonic…
Transmission of low-energetic electrons through two-dimensional materials leads to unique scattering resonances. These resonances contribute to photoemission from occupied bands where they appear as strongly dispersive features of suppressed photoelectron intensity. Using angle-resolved photoemission we have systematically studied scattering resonances in epitaxial graphene grown on the chemically differing substrates Ir(111), Bi/Ir, Ni(111) as well as in graphene/Ir(111) nanopatterned with a superlattice of uniform Ir quantum dots. While the strength of the chemical interaction with the subst…
On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization properties. Here, we report on the dynamic control of the optical emission from core-shell GaN/InGaN nanowire (NW) heterostructures using radio frequency surface acoustic waves (SAWs). The SAWs are excited on the surface of a piezoelectric lithium niobate crystal equipped with a SAW delay line onto which the NWs were mechanically transferred. Luminescent quantum…
Hybrid systems consisting of a quantum emitter coupled to a mechanical oscillator are receiving increasing attention for fundamental science and potential applications in quantum technologies. In contrast to most of the presented works, in which the oscillator eigenfrequencies are irreversibly determined by the fabrication process, we present here a simple approach to obtain frequency-tunable mechanical resonators based on suspended nanomembranes. The method relies on a micromachined piezoelectric actuator, which we use both to drive resonant oscillations of a suspended Ga(Al)As membrane with …
In this work, we report for the first time the crucial role of topological anomalies like Stone-Wales (SW) type bond rotations in tuning the optical properties of graphene quantum dots (GQDs). By means of first-principles calculations, we first show that the structural stability of GQDs strongly depends on position of SW defects. Optical absorption spectra is then computed using electron-correlated methodology to demonstrate that SW type reconstruction is responsible for the appearance of new defect-induced peaks below the optical gap and dramatically modifies the optical absorption profile. I…
Measured and calculated results are presented on the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime. The structures are based on high-finesse GaAs/AlAs micropillar cavities, each with an active medium consisting of a layer of InGaAs quantum dots and distinguishing feature of having substantial fraction of spontaneous emission channeled into one cavity mode (high-beta factor). This paper shows that the usual criterion for lasing with a conventional (low-beta factor) cavity, a sharp nonlinearity in an input-output curve accompanied by notice…
Self-assembled InAs quantum dots (QDs) are of great interest as components of optoelectronic devices that can operate at the quantum limit. The charge configuration, interdot coupling, and symmetry of complexes containing multiple QDs can all be tuned with applied electric fields, but the magnitude and angle of the electric field required to control each of these parameters depends on the orientation of the QD complex. We present a 4-electrode device compatible with optical excitation and emission that allows application of electric fields with arbitrary magnitudes and angles relative to isola…
Engineering the interaction between light and matter is an important goal in the emerging field of quantum opto-electronics. Thanks to the use of cavity quantum electrodynamics architectures, one can envision a fully hybrid multiplexing of quantum conductors. Here, we use such an architecture to couple two quantum dot circuits . Our quantum dots are separated by 200 times their own size, with no direct tunnel and electrostatic couplings between them. We demonstrate their interaction, mediated by the cavity photons. This could be used to scale up quantum bit architectures based on quantum dot c…
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the quantum dot confinement is achieved by top gate technique. Transport measurements show a series of Coulomb diamonds, demonstrating that the quantum dot is well defined and highly tunable. Tunable, gate…
Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of the strain-induced surface kinetics during the growth of vertically-stacked multiple layers of QDs allow to engineer their self organization process. Most noticeably, the present study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping w…
