arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2004.04492cond-mat.mes-hallcond-mat.mtrl-sci
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GaAs微扰区以外的高次谐波产生

High-harmonic generation in GaAs beyond the perturbative regime

Peiyu Xia, Tomohiro Tamaya, Changsu Kim, Faming Lu, Teruto Kanai, Nobuhisa Ishii, Jiro Itatani, Hidefumi Akiyama, Takeo Kato

摘要:

我们实验研究了反射几何中砷化镓体材料中高次谐波产生的场强依赖性。我们发现,在高场的微扰标度律不再成立的振荡行为。通过构建基于Luttinger-Kohn模型的理论框架,我们成功地再现了所观察到的振荡行为。实验和理论之间的定性协议表明,场致动态带修改是至关重要的非微扰制度。我们认为起源的振荡行为的动力学本地化的基础上的Floquet子带图片。

英文摘要:

We experimentally study the field-intensity dependence of high-harmonic generation in bulk gallium arsenide in reflection geometry. We find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We consider the origin of the oscillatory behavior in terms of dynamical localization based on the Floquet subband picture.

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