Ultrafast strain-induced charge transport in semiconductor superlattices

AuPt超晶格中电子能量的超快耗散局域化

Ultrafast Dissipative Localization of Electronic Energy in AuPt Superlattices

本文通过超快X射线衍射实验证明，AuPt超晶格中电子能量在飞秒尺度内耗散局域化至Pt组分，源于Pt大电子热容与快速电子输运，实现纳米尺度能量分布的飞秒控制。

用于第三代红外探测器的多波段应变平衡超晶格材料体系

Multiband strain balanced superlattice material system for third generation infrared detectors

本研究针对第三代红外探测器的应用需求，介绍了应变平衡超晶格（SLS）材料体系的发展背景，以及基于该体系的三色红外光电探测器的最新研究进展，为多色红外探测器件研发提供参考。

Ion-Implantation as Pixel Isolation for Fabrication of Planar Strain-Balanced Antimony-based Superlattice Infrared Photodetectors

Strained layer superlattice (SLS) material system is a dynamic and relatively new material for infrared detection. Large format, small-pitch and low-cost focal plane arrays (FPAs) with more pixels are in demand for different applications. For the current SLS based FPAs mesa etching are used to define the pixels. For those SLS based FPAs with scaled pixel size making the mesa structures can be challenging due to the need for deep etch, and then passivation process. One of the possible solutions to address this issue is to consider a planar structure and avoiding the mesa-isolation etching or co…

Exotic single-photon and enhanced deep-level emissions in hBN strain superlattice

The peculiar defect-related photon emission processes in 2D hexagonal boron nitride (hBN) have become a topic of intense research due to their potential applications in quantum information and sensing technologies. Recent efforts have focused on activating and modulating the defect energy levels in hBN by methods that can be integrated on a chip, and understanding the underlying physical mechanism. Here, we report on exotic single photon and enhanced deep-level emissions in 2D hBN strain superlattice, which is fabricated by transferring multilayer hBN onto hexagonal close-packed silica spheres…

Strain-engineering of twist-angle in graphene/hBN superlattice devices

The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting th…

应变平衡低温生长铍掺杂InGaAs/InAlAs超晶格用于1550 nm激光激发下的高性能太赫兹光电导体

Strain-Balanced Low-Temperature-Grown Beryllium-Doped InGaAs/InAlAs Superlattices for High-Performance Terahertz Photoconductors under 1550 nm Laser Excitation

本研究通过分子束外延制备了低温生长铍掺杂InGaAs/InAlAs应变平衡超晶格，发现其具有亚皮秒载流子寿命、增强迁移率和1550 nm吸收系数，为电信波长宽带太赫兹光电导探测器提供了高性能材料平台。