arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2210.03480cond-mat.mes-hallphysics.app-ph
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通过工艺诱导应变实现二维异质结构中的莫尔工程

Moiré Engineering in 2D Heterostructures with Process-Induced Strain

Tara Peña, Aditya Dey, Shoieb A. Chowdhury, Ahmad Azizimanesh, Wenhui Hou, Arfan Sewaket, Carla L. Watson, Hesam Askari, Stephen M. Wu

AI总结:

本研究通过工艺诱导应变工程在扭曲双层石墨烯中实现了对莫尔超晶格干涉图样的确定性控制,利用应力薄膜调节异质应变,无需额外扭转即可系统调节莫尔对称性与周期性。

摘要:

我们报道了通过实施可设计的器件级异质应变与工艺诱导应变工程(工业硅纳米加工工艺中广泛使用的技术),实现了对扭曲双层石墨烯中莫尔超晶格干涉图样的确定性控制。通过在扭曲双层石墨烯样品上沉积应力薄膜,异质应变的幅度和应变方向性可分别通过应力膜作用力(薄膜应力×薄膜厚度)和图案化的应力几何结构来控制。我们利用拉曼光谱技术,通过面内和莫尔激活的声子模式频移,对应变和莫尔干涉进行了表征。结果证实,在施加单轴或双轴异质应变的情况下,莫尔超晶格中存在系统性的C$_{3}$旋转对称性破缺和可调的周期性。实验结果得到了分子静力学模拟和基于密度泛函理论的第一性原理计算的验证。这不仅提供了一种无需额外扭转即可调节莫尔干涉的方法,还为通过确定性设计探索不同范德华莫尔超晶格对称性提供了系统途径。

英文摘要:

We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial silicon nanofabrication processes. By depositing stressed thin films onto our twisted bilayer graphene samples, heterostrain magnitude and strain directionality can be controlled by stressor film force (film stress x film thickness) and patterned stressor geometry, respectively. We examine strain and moiré interference with Raman spectroscopy through in-plane and moiré-activated phonon mode shifts. Results support systematic C$_{3}$ rotational symmetry breaking and tunable periodicity in moiré superlattices under the application of uniaxial or biaxial heterostrain. Experimental results are validated by molecular statics simulations and density functional theory based first principles calculations. This provides a method to not only tune moiré interference without additional twisting, but also allows for a systematic pathway to explore different van der Waals based moiré superlattice symmetries by deterministic design.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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