The presence of elemental vacancies in materials is inevitable according to statistical thermodynamics, which will decide the chemical and physical properties of the investigated system. However, the controlled manipulation of vacancies for specific applications is a challenge. Here we report a facile method for creating large concentrations of S vacancies in the inert basal plane of MoS2 supported on semimetal CoMoP2. With a small applied potential, S atoms can be removed in the form of H2S due to the optimized free energy of formation. The existence of vacancies favors electron injection from the electrode to the active site by decreasing the contact resistance. As a consequence, the activity is increased by 221 % with the vacancy-rich MoS2 as electrocatalyst for hydrogen evolution reaction (HER). A small overpotential of 75 mV is needed to deliver a current density of 10 mA cm-2, which is considered among the best values achieved for MoS2. It is envisaged that this work may provide a new strategy for utilizing the semimetal phase for structuring MoS2 into a multi-functional material.
Fuel cells in vehicles are the leading cause of carbon monoxide emissions. CO is one of the most dangerous gases in the atmosphere, as it binds to the hemoglobin in blood cells 200 times easier than O2. As the amount of CO in the blood stream increases, the level of oxygen decreases, which can lead to many neurological problems. To reduce the amount of CO in the atmosphere, scientists have focused on the adsorption of oxygen. The best substrates used today are platinum and palladium monolayers, which are very expensive. Because of this, researchers have searched for cheap materials, such as Mo…
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). Sulfur vacancies, which are absent in as-grown samp…
Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the potential of these materials for electronic devices requires a better understanding of how defects control the carrier concentration, character, and mobility. Utilizing a correction scheme developed by Freysoldt and Neugebauer to ensure the appropriate electrostatic boundary conditions for charged defects in 2D materials, we perform density functional theory calcu…
Using temperature dependent photoluminescence (PL), polarization resolved PL and Raman spectroscopy, we investigate the effect of in situ vacuum annealing as well as the relaxation of strain on the luminescence and the valley polarization properties of large area strictly monolayer (1L)-MoS$_2$, grown on sapphire and SiO$_2$/Si substrates by a microcavity based chemical vapor deposition (CVD) technique. The study shows that the strain as well as the physisorption of air molecules at the sulfur vacancy ($V_S$) sites play key roles in governing the optical quality of CVD grown 1L-MoS$_2$. Remova…
Monolayer transition metal dichalcogenides (TMDCs) are two-dimensional (2D) materials with many potential applications. Chemical vapour deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, we propose to use thiol as a liquid precursor for CVD growth of high quality and uniform 2D MoS2. Atomic-resolved structure characterizations…
While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional doping with acceptor atoms is typically required to tune the conductivity to p-type in order to facilitate their potential application in different devices. Here, we report a systematic study on the equivalent electrical "doping" effect of - single sulfur vacancies (V1S) in monolayer WS2 and MoS2 by studying the interface interaction of WS2-Au and MoS2-Au contacts. Based on our first principles calculations, we found that the V1S can signifi…
Enhanced Hydrogen Evolution Catalysis of Pentlandite due to the Increases in Coordination Number and Sulfur Vacancy during Cubic-Hexagonal Phase Transition
Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR)（纳米结构材料研究所（ISMN）- 意大利国家研究委员会（CNR））；Istituto per la microelettronica e microsistemi (IMM) Consiglio Nazionale delle Ricerche (CNR), Rome unit（微电子与微系统研究所（IMM）- 意大利国家研究委员会（CNR），罗马分部）；Istituto dei Materiali per l'Elettronica ed il Magnetismo (IMEM) - Consiglio Nazionale delle Ricerche (CNR)（电子与磁性材料研究所（IMEM）- 意大利国家研究委员会（CNR））；Department of Mathematical, Physical and Computer Sciences, University of Parma（帕尔马大学数学、物理和计算机科学系）；Dipartimento di Chimica “ U. Schiff” Università di Firenze（佛罗伦萨大学“U. Schiff”化学系）
Enhanced room temperature ferromagnetism in nanostructured MoS2 flakes by hydrogen post-treatment: Combined experimental and first-principles-based studies
We explore the combined impact of sulfur vacancies and electronic interactions on the optical properties of monolayer MoS$_2$. First, we present a generalized Anderson-Hubbard Hamiltonian that accounts for both randomly distributed sulfur vacancies and the presence of dielectric screening within the material. Second, we parameterize this energy-dependent Hamiltonian from first-principles calculations based on density functional theory and the Green function and screened Coulomb (GW) method. Third, we apply a first-principles-based many-body typical medium method to determine the single-particl…
Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors. By increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, the Vth of MoS2 transistors can be left- and right-shifted, respectively. Transistors fabricated on perfect MoS2 flakes are found to exhibit two-fold enhancement in mobility and a very positive Vth. More importantly, our elegant hydrogen treatment is able to tune the large…
Local magnetic impurities arising from atomic vacancies in two-dimensional (2D) nanosheets are predicted to have a profound effect on charge transport due to resonant scattering, and provide a handle for enhancing thermoelectric properties through the Kondo effect. However, the effects of these impurities are often masked by external fluctuations and turbostratic interfaces, therefore, it is highly challenging to probe the correlation between magnetic impurities and thermoelectric parameters experimentally. In this work, we demonstrate that by placing Molybdenum Disulfide on a hexagonal Boron …
Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process rep…
ZnO is a promising candidate as an environment friendly thermoelectric (TE) material. However, the poor TE figure of merit (zT) needs to be addressed to achieve significant TE efficiency for commercial applications. Here we demonstrate that selective enhancement in phonon scattering leads to increase in zT of RGO encapsulated Al-doped ZnO core shell nanohybrids, synthesized via a facile and scalable method. The incorporation of 1 at% Al with 1.5 wt% RGO into ZnO (AGZO) has been found to show significant enhancement in zT (=0.52 at 1100 K) which is an order of magnitude larger compared to that …
