AI 中文总结
该研究通过可控硫空位工程将单层MoS₂转化为首个二维驻极体，利用空位作为深电子陷阱实现准永久电荷存储，同时调控激子行为，为二维功能材料设计提供新途径。
AI 中文摘要
本文展示，可控硫空位工程可将单层二硫化钼（MoS₂）转化为驻极体，使其具备在单原子层内存储准永久静电荷的能力。采用印章辅助无电极电化学纳米光刻技术，可生成亚微米空间尺度控制的硫空位，得到可编程缺陷密度范围为10¹⁰至10¹³ cm⁻²。所得空位畴作为深电子陷阱，产生最高达1 μC·cm⁻²的表面电荷密度，在环境条件下电荷保持时间达数百天。开尔文探针力显微镜和静电力显微镜直接观测到可复制光刻图案的稳定静电图案。相同空位结构同时定义激子猝灭区域，产生共定位的光学与静电对比度，通过增强非辐射复合将表观激子寿命从15 ns缩短至180 ps。光学响应持续超过一年，表明硫空位而非瞬态电荷态是图案化功能的起源。这些结果确立了缺陷工程化MoS₂为首个二维驻极体，并证明原子空位可被用作功能元件，在单原子层内编码静电与激子行为。
英文摘要
Here, we show that controlled sulfur vacancy engineering converts monolayer MoS2 into an electret, imparting the ability to store quasi-permanent electrostatic charge within a single atomic layer. Sulfur vacancies are generated with submicrometer spatial control by stamp-assisted electrode-free electrochemical nanolithography, yielding programmable defect densities from 10 10 to 10 13 1 cm-2. The resulting vacancy domains act as deep electron traps and produce surface charge densities up to 1 uCcm-2, with charge retention in the order of hundreds days under ambient conditions. Kelvin probe and electric force microscopies directly reveal stable electrostatic patterns that replicate the lithographic motif. The same vacancy landscape simultaneously defines exciton-quenching regions, generating co-localized optical and electrostatic contrast and reducing the apparent exciton lifetime from 15 ns to 180 ps through enhanced nonradiative recombination. The persistence of the optical response over one year identifies sulfur vacancies, rather than transient charge states, as the origin of the patterned functionality. These results establish defect-engineered MoS2 as the first two-dimensional electret and demonstrate that atomic vacancies can be exploited as functional elements for encoding electrostatic and excitonic behavior in a single atomic layer.
Comments27 pages, including Supporting Informations, 9 Figures (4 in the text 5 in Supprting Materials)
