arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2003.07592cond-mat.mes-hall
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量子点中的空穴-声子相互作用:声子约束和封装材料对自旋轨道量子比特的影响

Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits

Jing Li, Benjamin Venitucci, Yann-Michel Niquet

摘要:

自旋-声子相互作用是限制半导体量子点中自旋量子比特寿命的机制之一。与诸如电荷噪声的其他机制不同,声子是器件固有的,并且几乎不能被减轻。因此,它们对量子位的弛豫时间设定了基本的限制。在这里,我们介绍了一个通用的框架,用于计算的自旋(和电荷)的整体(3D)和强烈限制的一维或二维声子引起的跃迁率。我们讨论了六带kp模型描述的空穴自旋轨道量子比特的特殊情况。接下来,我们将这一理论应用于绝缘体上硅器件中的空穴量子比特。我们表明,在这个设备中的自旋弛豫是由一个带混合项,耦合的空穴通过价带变形势d的横向声学声子,并优化偏置点和磁场方向,以最大限度地提高拉比振荡Q,可以在弛豫时间T1内实现的数量。尽管在价带有很强的自旋-轨道耦合,但声子限制的Q可以达到几万。接下来,我们将探讨一维和二维结构中声子限制的影响,以及封装材料对弛豫速率的影响。我们表明,自旋寿命可以取决于微米长的长度尺度上的设备的结构,并且当量子位周围的材料变得更硬时,它们会得到改善。因此,一旦弛豫的外在来源减少,半导体量子比特中的声子工程可能变得相关。

英文摘要:

Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be mitigated. They set, therefore fundamental limits to the relaxation time of the qubits. Here we introduce a general framework for the calculation of the spin (and charge) transition rates induced by bulk (3D) and strongly confined 1D or 2D phonons. We discuss the particular case of hole spin-orbit qubits described by the 6 bands kp model. We next apply this theory to a hole qubit in a silicon-on-insulator device. We show that spin relaxation in this device is dominated by a band mixing term that couples the holes to transverse acoustic phonons through the valence band deformation potential d, and optimize the bias point and magnetic field orientation to maximize the number of Rabi oscillations Q that can be achieved within on relaxation time T1. Despite the strong spin-orbit coupling in the valence band, the phonon-limited Q can reach a few tens of thousands. We next explore the effects of phonon confinement in 1D and 2D structures, and the impact of the encapsulation materials on the relaxation rates. We show that the spin lifetimes can depend on the structure of the device over micrometer-long length scales and that they improve when the materials around the qubit get harder. Phonon engineering in semiconductor qubits may therefore become relevant once the extrinsic sources of relaxation have been reduced.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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